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Binding Energy patents

      

This page is updated frequently with new Binding Energy-related patent applications.




 Super electrical battery patent thumbnailSuper electrical battery
An electric energy storage device is provided, which includes first and second conductor layers, and positive and negative electrodes. Each of the first and second conductor layers has both surfaces coated with ionic or dipole material.

 Carbon nanotube single-photon source patent thumbnailCarbon nanotube single-photon source
An atom, molecule, atomic layer, or molecular layer is adhered to a carbon nanotube surface, or the surface is doped with the atom, molecule, atomic layer, or molecular layer, to form a deep localized level so that an exciton is localized. Alternatively, an atom, molecule, inorganic or organic substance of an atomic or molecular layer, a metal, a semiconductor, or an insulator is absorbed to, deposited on, or encapsulated in the carbon tube inside surface to make permittivity of the portion undergoing the absorption, deposition, or encapsulation higher than that of a clean portion free of the absorption, deposition, or encapsulation so that binding energy of the exciton in the clean portion is high, or reduce a band gap of the portion undergoing the absorption, deposition, or encapsulation so that the exciton is confined and localized in the clean portion or the position undergoing the absorption, deposition, or encapsulation..
Keio University


 Method for selecting candidate ligand that binds to cancer cell-surface protein patent thumbnailMethod for selecting candidate ligand that binds to cancer cell-surface protein
Disclosed herein are structure-based methods for ligand optimization. The methods involve the selection of a candidate ligand from a structural library based on the binding energy of the ligand with a cancer cell-surface protein.
Academia Sinica


 Methods for determining relative binding energy of monomers and methods  of using the same patent thumbnailMethods for determining relative binding energy of monomers and methods of using the same
Disclosed herein are monomers that exhibit reduced estradiol related receptor binding activity, and methods for identifying monomers that exhibit reduced estradiol related receptor binding activity. Methods for preparing a polymeric composition using such monomers are also disclosed.
Sabic Global Technologies B.v.


 Peptide inhibitor of hiv reverse transcription patent thumbnailPeptide inhibitor of hiv reverse transcription
Disclosed are peptides that exhibit good binding to the anticodon stem and loop (asl) of human lysine trna species, trnalys3. Using a search algorithm combining monte carlo (mc) and self-consistent mean field (scmf) techniques, the peptides were evolved a with the ultimate purpose of using them to break the replication cycle of hiv-1 virus.
The Research Foundation For The State University Of New York


 Catalytic activated carbon structures and methods of use and manufacture patent thumbnailCatalytic activated carbon structures and methods of use and manufacture
The present disclosure relates generally to catalytic activated carbon structures and the methods of removing sulfur-containing compounds from fluid stream using such catalytic activated carbon structures. In certain aspects, the catalytic activated carbon structure comprise nitrogen-enriched activated carbon, cuprous oxide, and a binder, wherein the nitrogen-enriched activated carbon includes from about 0.5% to about 10% by weight of nitrogen based on total weight of the nitrogen-enriched activated carbon, at least about 30% by weight of the nitrogen are aromatic nitrogen species having a binding energy of at least 398.0 ev as determined by xps..
Meadwestvaco Corporation


 Metal oxide thin film,  producing same, and coating solution for forming metal oxide thin film used in said method patent thumbnailMetal oxide thin film, producing same, and coating solution for forming metal oxide thin film used in said method
(d represents a peak area of a component having a peak position in a binding energy range of 529 ev or higher and lower than 531 ev, and e represents a peak area of a component having a peak position in a binding energy range of 531 ev to 532 ev). .

 Metal oxide film,  manufacturing same, thin film transistor, display apparatus, image sensor, and x-ray sensor patent thumbnailMetal oxide film, manufacturing same, thin film transistor, display apparatus, image sensor, and x-ray sensor
Provided is a metal oxide film, including a component having a peak position, in an xps spectrum thereof, within a range corresponding to a binding energy of from 402 ev to 405 ev, the metal oxide film satisfying a relationship represented by equation (1): a/(a+b)≧0.39, when an intensity of peak energy attributed to nitrogen 1s electron is obtained by peak separation, and a manufacturing method of the same, an oxide semiconductor film, a thin-film transistor, a display apparatus, an image sensor, and an x-ray sensor. In equation (1), a represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 ev to 405 ev, and b represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 ev to 408 ev..
Fujifilm Corporation


 Methods for determining relative binding energy of monomers and methods  of using the same patent thumbnailMethods for determining relative binding energy of monomers and methods of using the same
Disclosed herein are monomers that exhibit reduced estradiol related receptor binding activity, and methods for identifying monomers that exhibit reduced estradiol related receptor binding activity. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure..
Sabic Global Technologies B.v.


 Siox barrier for pharmaceutical package and coating process patent thumbnailSiox barrier for pharmaceutical package and coating process
A vessel including a thermoplastic wall enclosing a lumen is disclosed. The wall supports an siox composite barrier coating or layer, for which x is from 1.8 to 2.4, between the wall and the lumen.
Sio2 Medical Products, Inc.


Reflective mask blank, reflective mask and manufacturing reflective mask

The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a ta 4f narrow spectrum of the highly oxidized layer when analyzed by x-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 ev.. .
Hoya Corporation

Prepreg and carbon fiber reinforced composite material

To provide a prepreg and a carbon fiber reinforced composite material that are excellent in adhesion between a matrix resin and carbon fibers and long-term storage stability and also excellent in microcrack resistance due to the increased toughness. The present invention provides a prepreg that includes; agent-coated carbon fibers coated with a sizing agent; and a thermosetting resin composition impregnated into the sizing agent-coated carbon fibers.
Toray Industries, Inc.

Carbon fiber-reinforced resin composition, manufacturing carbon fiber-reinforced resin composition, molding material, manufacturing molding material, and carbon fiber-reinforced resin molded article

A carbon fiber-reinforced resin composition of the present invention includes: sizing agent-coated carbon fibers in which carbon fibers are coated with a sizing agent; and a matrix resin. The sizing agent includes at least an aliphatic epoxy compound (a) and an aromatic epoxy compound (b1) as an aromatic compound (b).
Toray Industries, Inc.

Positive active material, positive electrode, and lithium battery including the same and manufacture thereof

A positive active material, a method of preparing the positive active material, a positive electrode including the positive active material, and a lithium battery including the positive active material are disclosed. The positive active material includes a core and a coating layer on the core.
Samsung Sdi Co., Ltd.

Prepreg and carbon fiber-reinforced composite material

A prepreg includes; sizing agent-coated carbon fibers coated with a sizing agent; and a thermosetting resin composition impregnated into the sizing agent-coated carbon fibers. The sizing agent includes an aliphatic epoxy compound (a) and an aromatic compound (b) at least containing an aromatic epoxy compound (b1).
Toray Industries, Inc.

Exhaust gas purification catalyst

An exhaust gas purification catalyst includes: a substrate; a first catalyst layer that is arranged on an upper surface of the substrate and contains a first support and platinum supported on the first support, in which the first support contains a composite oxide which is formed of oxygen and at least one element selected from the group consisting of aluminum, phosphorus and boron and has an oxygen 1s binding energy in a range of 530 ev to 535 ev; and a second catalyst layer that is arranged on an upper surface of the first catalyst layer and contains a second support and rhodium supported on the second support, in which the second support contains a less-thermally-deteriorative ceria-zirconia composite oxide or a porous alumina.. .
Toyota Jidosha Kabushiki Kaisha

Prepreg and carbon fiber reinforced composite material

A prepreg is formed by impregnating sizing agent-coated carbon fibers coated with a sizing agent with a thermosetting resin composition. The sizing agent contains an aliphatic epoxy compound (a) and an aromatic compound (b) at least containing an aromatic epoxy compound (b1).
Toray Industries, Inc.

Dye-sensitized solar cell and preventing elution of catalyst from catalyst electrode

Providing a dye-sensitized solar cell having high durability and thermal resistance, and preventing elution of a platinum group catalyst from a catalytic electrode: by surface-treating the catalytic electrode with (a) a specific sulfur material having a molecular weight of 32 to 10,000 containing a sulfur atom having an oxidation number of −2 to 0, (b) another specific sulfur material containing no sulfur atom having an oxidation number of −2 to 0, but containing a sulfur atom having an oxidation number of +1 to +4 [with the proviso that the sulfur material (b) is such a material that a surface of the surface-treated catalyst electrode has a photoelectron peak within a binding energy range of 161 to 165 ev in an x-ray photoelectron spectrum 1, or (c) a mixture of the sulfur materials (a) and (b); and/or by adding the sulfur material into the electrolyte layer.. .
Shimane Prefectural Government

Dye-sensitized solar cell and preventing elution of catalyst from catalyst electrode

Providing a dye-sensitized solar cell having high durability and thermal resistance, and preventing elution of a platinum group catalyst from a catalytic electrode: by surface-treating the catalytic electrode with (a) a specific sulfur material having a molecular weight of 32 to 10,000 containing a sulfur atom having an oxidation number of −2 to 0, (b) another specific sulfur material containing no sulfur atom having an oxidation number of −2 to 0, but containing a sulfur atom having an oxidation number of +1 to +4 [with the proviso that the sulfur material (b) is such a material that a surface of the surface-treated catalyst electrode has a photoelectron peak within a binding energy range of 161 to 165 ev in an x-ray photoelectron spectrum], or (c) a mixture of the sulfur materials (a) and (b); and/or by adding the sulfur material into the electrolyte layer.. .
Shimane Prefectural Government

Negative electrode active material for electricity storage device, and producing same

A negative electrode active material for an electricity storage device comprises at least sno as a composition thereof. When a binding energy value of an electron on a sn 3d5/2 orbital of a sn atom in the negative electrode active material for an electricity storage device is defined as pl and a binding energy value of an electron on a sn 3d5/2 orbital of a metal sn is defined as pm, (pl−pm) is 0.01 to 3.5 ev..
Nippon Electric Glass Co., Ltd.

Electrode, secondary battery, battery pack, electric vehicle, electric power storage system, electric power tool, and electronic apparatus

A secondary battery includes: a cathode; an anode; and a non-aqueous electrolytic solution, wherein the cathode includes a second lithium-containing compound having an olivine-type crystal structure, a photoelectron spectrum of oxygen 1s obtained by surface analysis of the cathode with the use of x-ray photoelectron spectroscopy includes a third peak and a fourth peak, the third peak having an apex in a range in which binding energy is equal to or larger than 530 electron volts and less than 533 electron volts, and the fourth peak having an apex in a range in which binding energy is from 533 electron volts to 536 electron volts both inclusive and having spectrum intensity smaller than spectrum intensity of the third peak, and a ratio ie/id between a spectrum intensity id of the third peak and a spectrum intensity ie of the fourth peak is larger than ¼.. .
Sony Corporation

Evaluation and improvement of nuclease cleavage specificity

Engineered nucleases (e.g., zinc finger nucleases (zfns), transcriptional activator-like effector nucleases (talens), and others) are promising tools for genome manipulation and determining off-target cleavage sites of these enzymes is of great interest. We developed an in vitro selection method that interrogates 1011 dna sequences for their ability to be cleaved by active, dimeric nulceases, e.g., zfns and talens.
President And Fellows Of Harvard College

Method of binding site and binding energy determination by mixed explicit solvent simulations

It is described a method of binding site and binding energy determination by mixed explicit solvent all-atoms molecular dynamics simulations. The macromolecular target for which high affinity binders are sought is simulated in several mixed solvent environments comprising water and at least one amphiphilic organic co-solvent.

Direct graphene growth on metal oxides by molecular epitaxy

Direct growth of graphene on co3o4(111) at 1000 k was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp2 carbon lineshape, at average carbon coverages from 0.4-3 monolayers.

Method of increasing secondary power source capacity

A method of secondary power source capacity increasing including doping a compound into an electrolyte as an additive which binding energy is higher than binding energy of combinations that are formed at a secondary power source discharge, the compound of type anb10-n is doped as an additive, where a is a metal and b is a noble gas.. .

Sizing agent-coated carbon fibers, process for producing sizing agent-coated carbon fibers, prepreg, and carbon fiber reinforced composite material

Sizing agent-coated carbon fibers includes: a sizing agent including an aliphatic epoxy compound (a) and at least containing an aromatic epoxy compound (b1) as an aromatic compound (b); and carbon fibers coated with the sizing agent, wherein the sizing agent-coated carbon fibers have an (a)/(b) ratio of 0.50 to 0.90 where (a) is a height (cps) of a component at a binding energy (284.6 ev) assigned to chx, c—c, and c═c and (b) is a height (cps) of a component at a binding energy (286.1 ev) assigned to c—o in a c1s core spectrum of a surface of the sizing agent applied onto the carbon fibers analyzed by x-ray photoelectron spectroscopy using alkα1,2 as an x-ray source at a photoelectron takeoff angle of 15°.. .

Silicon carbide semiconductor device and manufacturing the same

A silicon carbide semiconductor device includes: a semiconductor substrate made of silicon carbide single crystal and having a principal surface and a backside; and an ohmic electrode contacting one of the principal surface and the backside of the semiconductor substrate in an ohmic manner. A boundary between the ohmic electrode and the one of the principal surface and the backside of the semiconductor substrate is terminated with an element, which has a pauling electronegativity larger than silicon and a binding energy with silicon larger than a binding energy of si—h..

Double layer transfer method

A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy e0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy ei; c) detaching the initial substrate from the layer; e) bonding a rear face onto a final substrate according to a final bonding energy ef; and f) debonding the intermediate substrate from the layer to transfer the layer onto the final substrate; step b) comprising a step of forming siloxane bonds si—o—si, step c) being carried out in a first anhydrous atmosphere and step f) being carried out in a second wet atmosphere such that the intermediate bonding energy ei takes a first value ei1 in step c) and a second value ei2 in step f), with ei1>e0 and ei2<ef.. .

Calculation binding free energy, calculation device of binding free energy, program, screening compound

A calculation method of binding free energy, which includes: calculating solvation energy (Δg1) between a solvent and a compound; and calculating an energy change (Δg2) between a bound state (λ=0) where the compound and a protein are bound, and an unbound state (λ=1) where the compound and the protein are not bound, wherein the calculating the energy change (Δg2) includes: determining a distance (dth), within which structure sampling is performed; calculating a change in binding energy (Δg21) between the compound and the protein within a distance equal to or shorter than the distance (dth), calculating a change in solvation energy (Δg23) between the solvent and the compound with ignoring an influence of the protein, calculating a change in binding energy (Δg22) between the compound and the protein with interpolation, and calculating a correction term (Δg24) with respect to a standard state.. .

Composite structure, product using same, and producing composite structure

A composite structure disclosed includes a base (x) and a layer (y) stacked on the base (x). The layer (y) includes a reaction product (r).

Evaluation and improvement of nuclease cleavage specificity

Engineered nucleases (e.g., zinc finger nucleases (zfns), transcriptional activator-like effector nucleases (talens), and others) are promising tools for genome manipulation and determining off-target cleavage sites of these enzymes is of great interest. We developed an in vitro selection method that interrogates 1011 dna sequences for their ability to be cleaved by active, dimeric nulceases, e.g., zfns and talens.

Enhanced optical gain and lasing in indirect gap semiconductor thin films and nanostructures

Structures and methodologies to obtain lasing in indirect gap semiconductors such as ge and si are provided and involves excitonic transitions in the active layer comprising of at least one indirect gap layer. Excitonic density is increased at a given injection current level by increasing their binding energy by the use of quantum wells, wires, and dots with and without strain.

Method for producing organic light-emitting element

Method for manufacturing organic el element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 ev to 3.6 ev lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° c.-230° c. Inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process..

Organic light-emitting element

An organic el element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 ev to 3.6 ev lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° c.-230° c. Inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process..

Systems and methods for cryogenic refrigeration

Systems and methods for improving the performance of dilution refrigeration systems are described. Filters and traps employed in the helium circuit of a dilution refrigerator may be modified to improve performance.

Method for producing organic light-emitting element

Method for manufacturing organic el element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 ev to 3.6 ev lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° c.-230° c. Inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process..



Binding Energy topics:
  • Binding Energy
  • Organic Electroluminescence
  • Display Panel
  • Semiconductor
  • Semiconductor Device
  • Storage Device
  • Organosiloxane
  • Electronic Device
  • Polysilazane
  • Electrical Device
  • Silicon Carbide
  • Silicon Carbide Semiconductor
  • Perovskite
  • Piezoelectric
  • Electrolyte


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    This listing is a sample listing of patent applications related to Binding Energy for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Binding Energy with additional patents listed. Browse our RSS directory or Search for other possible listings.


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