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Beryllium

Beryllium-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Neutron beam source generator and filter
National Tsing Hua University
June 07, 2018 - N°20180160521

A neutron beam source generator is provided, which includes an accelerator connecting to a beryllium target through a channel, a filter and a collimator. The beryllium target is disposed at an end of the channel and adjacent to the filter.
Process to produce modified clay, modified clay produced and use thereof
W. R. Grace & Co.-conn.
May 24, 2018 - N°20180142048

An intercalated, modified and calcined smectite clay comprising (a) pillars comprising aluminum and: (i) at least one rare earth or lanthanide group metal; or (ii) at least one rare earth or lanthanide group metal and gallium; and (b) at least one ion-exchanged metal selected from the group consisting of aluminum, barium, beryllium, calcium, cerium, cesium, copper, chromium, gadolinium, gallium, germanium, ...
Process to produce modified clay, supported metallocene polymerization catalyst, catalyst produced and use thereof
W. R. Grace & Co.-conn.
May 24, 2018 - N°20180142047

Catalyst support-activator for olefin polymerization catalysts, and processes for making, the support-activator comprising an intercalated, modified and calcined smectite clay comprising (a) pillars comprising aluminum and optionally: (i) at least one rare earth or lanthanide group metal; or (ii) at least one rare earth or lanthanide group metal and gallium; and (b) at least one ion-exchanged metal ion selected from ...
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Beryllium-free high-strength copper alloys
Ouestek Innovations Llc
April 19, 2018 - N°20180105898

A beryllium-free high-strength copper alloy includes, about 10-30 vol % of l12-(ni,cu)3(al,sn), and substantially excludes cellular discontinuous precipitation around grain boundaries. The alloy may include at least one component selected from the group consisting of: ag, cr, mn, nb, ti, and v, and the balance cu..
Method for producing copper particles, copper particles, and copper paste
Osaka University
April 19, 2018 - N°20180104747

A method for producing copper particles includes a preparation step and a heating step. In the preparation step, a copper compound, a salt of a main group metal, and a polyhydric alcohol are prepared.
Phosphor and light emitting device
Chi-mei Corporation
March 29, 2018 - N°20180086974

The present invention provides a phosphor, including a constituent having the formula capsrqmm-aa-bb—ot—nn:zr, in which m selected from the group consisting of magnesium, barium, beryllium and zinc; a selected from the group consisting of aluminum, gallium, indium, scandium, yttrium, lanthanum, gadolinium and lutetium; b selected from the group consisting of silicon, germanium, tin, titanium, zirconium ...
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Reusable casting head device
Wuxi Lihu Corporation Limited
March 15, 2018 - N°20180071815

A reusable casting head device comprises a casting head control mechanism, a casting head mechanism and a temperature control mechanism. A gate of the casting head is sealed by the gate holder to allow that initially heated molten aluminum is rapidly heated in the casting head, thus improving efficiency; the casting head made of beryllium copper is heated and maintained ...
Manufacturing method of semiconductor device and semiconductor device
Fuji Electric Co., Ltd.
January 11, 2018 - N°20180012964

Provided is a manufacturing method of a semiconductor device including a vertical mosfet having a planar gate. The manufacturing method of a semiconductor device includes forming a n-type gallium nitride layer on a gallium nitride monocrystalline substrate, and forming an impurity-implanted region that contains impurities at a uniform concentration in a direction parallel to a main surface of the gallium ...
Compositions including a high molecular weight acid suitable for conductive polymer formation on dielectric substrate
Macdermid Enthone Inc.
January 04, 2018 - N°20180002541

The invention relates to a composition and a process for the deposition of conductive polymers on dielectric substrates. In particular, the invention relates to a composition for the formation of electrically conductive polymers on the surface of a dielectric substrate, the composition comprising at least one polymerizable monomer which is capable to form a conductive polymer, an emulsifier and an ...
Thermally conductive and electrically isolating layers in semiconductor structures
Newport Fab, Llc Dba Jazz Semiconductor
December 28, 2017 - N°20170372983

A semiconductor structure includes a semiconductor wafer having at least one semiconductor device integrated in a first device layer, a thermally conductive but electrically isolating layer on a back side of the semiconductor wafer, a front side glass on a front side of the semiconductor wafer, where the thermally conductive but electrically isolating layer is configured to dissipate heat from ...
Integration of thermally conductive but electrically isolating layers with semiconductor devices
Newport Fab, Llc Dba Jazz Semiconductor
December 28, 2017 - N°20170372982

A semiconductor structure includes a semiconductor wafer having at least one semiconductor device integrated in a first device layer, a thermally conductive but electrically isolating layer on a back side of the semiconductor wafer, a front side glass on a front side of the semiconductor wafer, where the thermally conductive but electrically isolating layer is configured to dissipate heat from ...
Quartz crystal microbalance sensor for deposition monitoring
Samsung Display Co., Ltd.
December 28, 2017 - N°20170370884

A quartz crystal microbalance (qcm) sensor includes a crystal plate, a buffer layer, and an electrode. The crystal plate has a first surface and a second surface.
Processes for making salt systems including beryllium fluoride
Materion Corporation
December 28, 2017 - N°20170369328

Processes for producing beryllium fluoride salt systems containing beryllium fluoride, such as lithium beryllium fluoride salts, are disclosed herein. The processes include mixing ammonium beryllium fluoride with a lithium compound, melting the mixture to form a molten phase, purging the molten phase, and cooling the molten phase.
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Operational neutron source
Joint Stock Company "akme-engineering"
November 16, 2017 - N°20170330642

The invention relates generally to nuclear engineering and more particularly to controlled reactor start-up. The invention improves reliability of an operational neutron source by creating additional safety barriers between the coolant and the source active part materials.
Liner for protection of adhesives
November 02, 2017 - N°20170313909

Release liners and methods protect one or more adhesives, wherein the release liners and/or methods comprise at least one abhesive release layer and at least one layer of a getter material capable of sorbing at least one permeable substance, wherein the getter material is at least one substance selected from the group consisting of lithium, beryllium, boron, sodium, magnesium, ...
Dry skin conductance electrode
Koninklijke Philips N.v.
October 26, 2017 - N°20170303812

The present invention relates to a dry skin conductance electrode for contacting the skin of a user. In order to provide a dry skin conductance electrode for long-term measurements which does not cause problems to the user while still providing a good signal level, the electrode comprises a material made of a noble metal doped with at least one dopant ...
Beryllium oxide integral resistance heaters
Materion Corporation
October 12, 2017 - N°20170295612

An integral resistance heater is disclosed. The heater includes a beryllium oxide (beo) ceramic body having a first surface and a second surface.
Apparatus and methods to create a doped sub-structure to reduce leakage in microelectronic transistors
Intel Corporation
September 28, 2017 - N°20170278944

Transistor devices having a doped buffer or sub-structure between an active channel and a substrate. In one embodiment, a p-type dopant, such as magnesium, zinc, carbon, beryllium, and the like, may be introduced in the formation of the sub-structure, wherein the dopant may act as a p/n junction at the active channel to source and drain interfaces and decrease ...
Method of manufacturing semiconductor device
Toyoda Gosei Co., Ltd.
September 28, 2017 - N°20170278719

A technique of reducing the manufacturing cost of a semiconductor device is provided, there is provided a method of manufacturing a semiconductor device comprising an ion implantation process of implanting at least one of magnesium and beryllium by ion implantation into a first semiconductor layer that is mainly formed from a group iii nitride; and a heating process of heating ...
Low temperature method for hermetically joining non-diffusing ceramic materials in multi-layer plate devices
Component Re-engineering Company, Inc.
August 24, 2017 - N°20170240475

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors.
Photovoltaic devices and method of making
First Solar, Inc.
August 17, 2017 - N°20170236956

A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer.
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