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Date/App# patent app List of recent Barrier Film-related patents
04/17/14
20140106151
 Gas barrier film, manufacturing method for gas barrier film, and electronic device patent thumbnailnew patent Gas barrier film, manufacturing method for gas barrier film, and electronic device
Provided are a gas barrier film which has extremely excellent gas barrier performance and high durability, a manufacturing method thereof, and an electronic device using the same. The gas barrier film having at least two gas barrier layers which contain at least si, o and n and are laminated on a substrate, in which the total thicknesswise composition distribution of the gas barrier layers includes both a thicknesswise continuous region which has a thickness of 20 nm or more and satisfies the following composition range (a) and a thicknesswise continuous region which has a thickness of 50 nm or more and satisfies the following composition range (b) in this order from the substrate side.
04/03/14
20140093700
 Barrier film composite, display apparatus including the barrier film composite, method of manufacturing barrier film composite, and method of manufacturing display apparatus including the barrier film composite patent thumbnailBarrier film composite, display apparatus including the barrier film composite, method of manufacturing barrier film composite, and method of manufacturing display apparatus including the barrier film composite
A barrier film composite includes a film with an undulating surface; and at least one decoupling layer and at least one barrier layer disposed on the undulating surface of the film.. .
03/27/14
20140087517
 Semiconductor device patent thumbnailSemiconductor device
An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in which an oxide semiconductor is used. Another object is to provide a semiconductor device with high reliability.
03/27/14
20140087497
 Barrier film for electronic devices and substrates patent thumbnailBarrier film for electronic devices and substrates
Methods for forming a coating over a surface are disclosed. A method includes directing a first source of barrier film material toward a substrate in a first direction at an angle θ relative to the substrate, wherein θ is greater than about 0° and less than about 85°.
03/27/14
20140087161
 Apparatus for manufacturing an adhesive-free gas barrier film having a ceramic barrier layer patent thumbnailApparatus for manufacturing an adhesive-free gas barrier film having a ceramic barrier layer
The present invention relates to an apparatus for manufacturing an adhesive-free gas barrier film comprising conveying means for conveying a film web; at least one first lock system for introducing the film web into a coating chamber of the apparatus; at least one first coating means by means of which the film web can be at least partially coated by depositing a barrier material in the coating chamber; and optionally at least one second lock system for expelling the film web out of the coating chamber; and at least one second coating means by means of which the coated film web can be at least partially coated by extrusion of a plastic melt.. .
03/20/14
20140077199
 Light emitting device and method of manufacturing the same patent thumbnailLight emitting device and method of manufacturing the same
The present invention has an object of providing a light-emitting device including an oled formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the oled (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided.
03/13/14
20140070301
 Semiconductor storage device and manufacturing method thereof patent thumbnailSemiconductor storage device and manufacturing method thereof
A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A plurality of memory cells are provided on the semiconductor substrate.
03/13/14
20140069497
 Protective film for solar cell and solar cell comprising the same patent thumbnailProtective film for solar cell and solar cell comprising the same
A protective film for a solar cell including a barrier film having a multilayer structure in which a substrate layer, an organic-inorganic hybrid layer and an inorganic barrier layer are sequentially stacked and a fluorine-based polymer layer, and a solar cell including the same are provided. Here, at least one of the substrate layer, the organic-inorganic hybrid layer, the inorganic barrier layer and the fluorine-based polymer layer includes at least one of a uv stabilizer and a uv absorbent.
03/06/14
20140061917
 Semiconductor device and fabricating method thereof patent thumbnailSemiconductor device and fabricating method thereof
A semiconductor device includes a lower conductor having a lower conductor sidewall, a barrier film having a barrier film sidewall formed directly on the lower conductor sidewall, and a via formed on a top surface of the lower conductor. A top portion of the barrier film sidewall is recessed, such that a top surface of the barrier film sidewall is at a level lower than the top surface of the lower conductor..
03/06/14
20140061741
 Semiconductor device and method for manufacturing the same patent thumbnailSemiconductor device and method for manufacturing the same
A semiconductor device comprises a bit line formed over a semiconductor substrate. The bit line has an upper portion and a lower portion, and the upper portion is narrower than the lower portion.
02/20/14
20140050864
Method for producing laminate
A method for producing a laminate comprising a substrate sheet containing a fluororesin and a gas barrier film directly laminated on at least one side of the substrate sheet, wherein the gas barrier film contains as the main component an inorganic compound comprising at least one member selected from the group consisting of oxygen, nitrogen and carbon, and silicon or aluminum, and the gas barrier film is formed on the substrate sheet by a high-frequency plasma chemical vapor deposition method at a frequency of 27.12 mhz.. .
02/13/14
20140045329
Method for forming cu wiring
A cu wiring forming method forms cu wiring in a recess of a predetermined pattern including a trench formed in an insulating film on a substrate surface. The method includes: forming a barrier film at least on a surface of the recess; forming a cu film by pvd to fill the recess with the cu film; forming an additional layer on the cu film; polishing an entire surface by cmp to form the cu wiring in the recess; forming a metal cap including a manganese oxide film on an entire surface including the insulating film and the cu wiring of the substrate after performing the cmp polishing; and forming a dielectric cap on the metal cap..
02/13/14
20140044981
Plasticizer-free flexible oxygen barrier films and laminates based on negatively charged and acetylated non-cellulosic polysaccharides isolated from biomass
Food, consumer, and industrial product packaging materials are provided by embodiments of the present invention. Films and laminates based on a combination of negatively charged polysaccharides are provided as such packaging materials.
01/30/14
20140030886
Method for forming copper wiring
A copper (cu) wiring forming method includes forming a barrier film on the entire surface of a wafer which has a trench, forming a ruthenium (ru) film on the barrier film, and filling the trench by forming a pure copper film on the ruthenium film by a physical vapor deposition (pvd). The method further includes forming a copper alloy film on the pure copper film by the pvd, forming a copper wiring by polishing the entire surface by a chemical mechanical polishing, forming a cap layer made of a dielectric material on the copper wiring, and segregating an alloy component included in the copper alloy film in a region including a portion corresponding an interface between the copper wiring and the cap layer..
01/30/14
20140030510
Vapor-deposited film having barrier performance
Such a vapor-deposited barrier film is provided that has a vapor-deposited layer having uniform film quality, a high film density and high barrier performance in the initial stage. The vapor-deposited barrier film contains a substrate having on at least one surface thereof at least one layer of a vapor-deposited layer (a).
01/30/14
20140030500
Microlayer barrier films
The present invention relates to films comprising a number of repeating microlayer units. The repeating units include one layer made from a barrier resin derived from one or more monomers having at least one oxygen atom, and one layer comprising a non-polar polyolefin.
01/30/14
20140027764
Semiconductor device
A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided.
01/30/14
20140026961
Gas barrier film
An object of the invention is to provide a gas barrier characteristic film that has a gas barrier characteristic and that is excellent in the repetitive reproducibility of the gas barrier characteristic. The film is a gas barrier characteristic film in which an [a] layer and a [b] layer mentioned below are sequentially layered on at least one surface of a macromolecular base, the [a] layer being a crosslinked resin layer whose pencil hardness is greater than or equal to h and whose surface free energy is less than or equal to 45 mn/m, and the [b] layer being a silicon-containing inorganic layer whose thickness is 10 to 1000 nm..
01/23/14
20140021559
Semiconductor device and a method of increasing a resistance value of an electric fuse
Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit.
01/23/14
20140021450
Light-emitting device and method of manufacturing the same
An organic light-emitting device is provided comprising a stack of layers including—an electro-optical layer structure (10) having a light emissive surface (12), —a light extraction structure (20) adjacent the light emissive surface, the light extraction structure has a nanostructured layer (22); and a backfill layer (24) comprising a material having a second index of refraction different from the first index of refraction, wherein the backfill layer (24) forms a planarizing layer over the nanostructured layer (22). The light emitting device includes a barrier film that comprises a first and a second inorganic layer (22, 26) and an organic layer (24) arranged between said inorganic layers.
01/16/14
20140017819
Semiconductor device and method of manufacturing the same
A ferroelectric capacitor is formed above a semiconductor substrate (1), and thereafter, wirings (24a) are formed. A barrier film (25) covering the wirings (24a) is formed.
01/16/14
20140017489
Biodegradable composite barrier film
The present invention is directed to a multilayer film having, as its main component, a hydroxy acid polymer with improved gas barrier and optional heat sealability. The oriented film of predominately hydroxy acid polymer having controlled shrink can be produced by melting and coextruding a hydroxy acid polymer with a much thinner layer of an amorphous aromatic copolyester to form a multilayer film that is quench cooled, then biaxially stretched at a process temperature above the glass transition and below the cold crystallization temperature of the hydroxy acid polymer.
01/02/14
20140001469
Thin-film transistor and zinc oxide-based sputtering target for the same
A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film.
12/12/13
20130328100
Encapsulating sheet, light emitting diode device, and producing method thereof
An encapsulating sheet includes an encapsulating resin layer and a barrier film layer formed at one side in a thickness direction of the encapsulating resin layer.. .
12/05/13
20130323519
Coatings for barrier films and methods of making and using the same
A barrier film including a substrate, a base (co)polymer layer applied on a major surface of the substrate, an oxide layer applied on the base (co)polymer layer, and a protective (co)polymer layer applied on the oxide layer. The protective (co)polymer layer is formed as the reaction product of a first (meth)acryloyl compound and a (meth)acryl-silane compound derived from a michael reaction between a second (meth)acryloyl compound and an aminosilane.
12/05/13
20130323491
Coating composition for forming gas barrier layer, gas barrier film, and method for producing gas barrier film
Provided are a coating composition for forming a gas barrier layer as configured such that a specific compound having two or more 5-membered cyclic carbonate groups and a compound having two or more amino groups are reactable at an equivalent ratio of functional groups of 0.8 to 1.25 to form the gas barrier layer with a polyhydroxyurethane resin as a principal component; a gas barrier film formed of a single layer or multiple layers, at least one of the layer or layers that forms or form the film is a layer that exhibits gas barrier properties, and the layer is formed of a polyhydroxyurethane resin having a specific chemical structure; and a production method of a film having gas barrier properties. Owing to the use of the specific polyhydroxyurethane resin, the coating composition, gas barrier film and production method readily enable to reduce moisture-dependent variations in gas barrier properties, to avoid the production of noxious fumes upon incineration disposal, to provide excellent processability, and to lower the pollutant load on the environment..
12/05/13
20130323436
Process for producing multilayered gas-barrier film
Provided are a method for producing a film, which is satisfactory in productivity, exhibits high gas-barrier property immediately after production, and has excellent adhesive strength between constituent layers while maintaining the excellent gas-barrier property, and a gas-barrier film, which is obtained by the method. The method for producing a gas-barrier film includes the steps of: (1) forming an inorganic thin film by a vacuum deposition method on at least one surface of a base film; (2) forming a thin film by a plasma cvd method on the inorganic thin film formed in the step (1); and (3) forming an inorganic thin film by the vacuum deposition method on the thin film formed in the step (2), in which each of the steps (1) and (3), and the step (2) are sequentially carried out at a pressure of 1×10−7 to 1 pa, and at a pressure of 1×10−3 to 1×102 pa, respectively..
11/28/13
20130317443
Dressing for an insertion site of an intravascular infusate
An epidermal dressing includes a barrier film and a fitting that cooperates with a sensor emitting and detecting near infrared signals for monitoring an intravascular infusion. The barrier film overlies an epidermal insertion site for a cannula administering the intravascular infusion.
11/28/13
20130317442
Dressing for an insertion site of an intravascular infusate
An epidermal dressing includes a barrier film and a fitting that cooperates with a sensor emitting and detecting near infrared signals for monitoring an intravascular infusion. The barrier film overlies an epidermal insertion site for a cannula administering the intravascular infusion.
11/28/13
20130316265
Membrane with optimized dimensions for a fuel cell
A uea for a fuel cell having an active region and a feed region is provided. The uea includes an electrolyte membrane disposed between a pair of electrodes.
11/28/13
20130316182
Method for producing gas barrier film, gas barrier film, and electronic device
An object of the present invention is to provide a method for producing a gas barrier film, capable of producing a gas barrier film which has production suitability in a roll-to-roll manner and is excellent in productivity and in gas barrier performance. The method for producing a gas barrier film including: a coating step for coating a first barrier layer formed on a base with a coating liquid containing a polysilazane compound to form a coating film; and an ultraviolet ray irradiation step for irradiation with a vacuum ultraviolet ray by light sources to form a second barrier layer, wherein an illuminance of the vacuum ultraviolet ray received on a coating film surface by the coating film from start to end of the irradiation with the vacuum ultraviolet ray is 160 mw/cm2 or less, there is a period t during which an illuminance of the vacuum ultraviolet ray on the coating film surface is 50 mw/cm2 or more and 160 mw/cm2 or less, and an amount of energy (e1) received on the coating film surface within t is 180 mj/cm2 or more and 1800 mj/cm2 or less..
11/28/13
20130314698
Method for the detection of defects in gas-barrier films using quantum dots
By forming nanoparticles from gas-phase precursors within cracks or defects in a gas-barrier film, crack-width may be determined from the diameter of the nanoparticles formed within. The optical absorption and emission wavelengths of a quantum dot are governed by the particle size.
11/28/13
20130313545
Display device
According to one embodiment, a display device includes a substrate, a thin film transistor, a passivation film, a hydrogen barrier film, a pixel electrode, an organic light emitting layer, an opposite electrode, and a sealing film. The thin film transistor is provided on a major surface of the substrate.
11/21/13
20130310782
Odor barrier film
A multilayer film for ostomy and bowel management applications includes a barrier layer comprising at least about 90% wt. Nylon 6/69.
11/21/13
20130310742
Dressing for an insertion site of an intravascular infusate
An epidermal dressing includes a barrier film and a fitting that cooperates with a sensor emitting and detecting near infrared signals for monitoring an intravascular infusion. The barrier film overlies an epidermal insertion site for a cannula administering the intravascular infusion.
11/21/13
20130309430
Polyester cereal liner with zero migration
Peelable extrusion coated barrier films including a polyester containing layer, and methods of making and using peelable extrusion coated plastic films having a polyester containing layer. One embodiment is a barrier film including a base film layer including polyester, and an extrusion coated peelable heat seal layer including polyethylene..
11/14/13
20130302627
Vapor-deposited coating for barrier films and methods of making and using the same
A barrier film including a substrate, a base polymer layer applied on a major surface of the substrate, an oxide layer applied on the base polymer layer, and a protective polymer layer applied on the oxide layer. The protective polymer layer is formed as the reaction product of a first (meth)acryloyl compound and a (meth)acryl-silane compound derived from a michael reaction between a second (meth)acryloyl compound and an aminosilane.
11/14/13
20130302591
Composite film having barrier properties for use as in-mold labels, article with in-mold labels, and methods of making same
Barrier films, in-mold label formed from barrier films, and containers incorporating in-mold labels with barrier properties. Films according to embodiments of the invention include multi-layer or composite films that include one or more layers of a barrier material.
11/14/13
20130299912
Semiconductor device having high-k gate insulation films and fabricating method thereof
A semiconductor device having high-k gate insulation films and a method of fabricating the semiconductor device are provided. The semiconductor device includes a first gate insulation film on a substrate and the first gate insulation film includes a material selected from the group consisting of hfo2, zro2, ta2o5, tio2, srtio3 and (ba,sr)tio3, and lanthanum (la).
11/14/13
20130299824
Semiconductor device
An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in which an oxide semiconductor is used. Another object is to provide a semiconductor device with high reliability.
11/14/13
20130299499
Dispensing containers
The invention provides a seal (10) that forms part of a container for storing and dispensing consumer products. The container can be used in place of conventional blister packs for the packaging of pills, tablets or capsules or multi-cavity containers for organising and storing mixed medication for subsequent dispensation according to a predefined dosage regimen.
11/07/13
20130295693
Semiconductor device and method for making semiconductor device
A semiconductor device with a functional element including an upper electrode composed of an electrically conductive metal oxide and being configured to store information; an interlayer insulating film covering the functional element; a contact hole formed in the interlayer insulating film, the contact hole including a side wall surface and a bottom and exposing an upper surface of the upper electrode at the bottom; an electrically conductive barrier film covering the bottom and the side wall surface of the contact hole; and a tungsten film formed on the electrically conductive barrier film, the tungsten film filling at least part of the contact hole, wherein a layer in which silicon atoms are concentrated is formed at the interface between the tungsten film and the electrically conductive barrier film.. .
10/31/13
20130289255
Method to increase the molecular weight of wood mannans and xylans comprising aromatic moieties
A method to increase the molecular weight of wood mannans and xylans comprising aromatic moieties comprises the steps: a) obtaining mannan and/or xylan from wood, b) subjecting the mannan/xylan to oxidizing conditions to convert at least a fraction of the aromatic groups into radicals and reacting said radicals with each other to obtain complexes of mannan/xylan with increased molecular weight. The method is easy and cost efficient and enables to upgrade small wood mannans and xylans that are important in the pulp and paper industry into larger mannans and xylans and more defined structures which makes their isolation easier and application areas broader.
10/31/13
20130285024
Electronic device with reduced non-device edge area
A first product as disclosed herein includes multiple devices, such as oleds, which are moveably connected to one another. The devices may be moveable from a first position in which they are stacked, closed, rolled, or the like, to a second expanded position in which they may be usable together as a single device.
10/24/13
20130280521
Gas barrier film and electronic device
There are provided a gas barrier film which is excellent in gas barrier performance and heat resistance; and an electronic device excellent in durability, in which the gas barrier film is used. The gas barrier film including, on a base, a first gas barrier layer which is formed by a physical vapor deposition method or a chemical vapor deposition method and contains si and n; and a second gas barrier layer which is formed by coating a solution containing a polysilazane compound, wherein the second gas barrier layer is subjected to conversion treatment by being irradiated with a vacuum ultraviolet ray; and, when the composition of each layer is represented by sioxny, the distribution of the composition sioxny of the second gas barrier layer in a thickness direction satisfies a condition specified in the following (a): (a) the second gas barrier layer includes 50 nm or more of a region of 0.25≦x≦1.1 and 0.4≦y≦0.75 in the thickness direction..
10/10/13
20130266749
Paperboard assembly with co extruded microlayered polymer barrier film
A co-extruded microlayered polymer barrier film is provided. The barrier film can be applied to paperboard to form a container having reduced oxygen gas permeability.
10/03/13
20130257257
Method to create vacuum insulated cabinets for refrigerators
A method to form a vacuum insulated cabinet including forming a first basin having a first basin flange extending from a first basin opening and comprising a front surface, and forming a second basin having a second basin flange extending away from a second basin opening and comprising a rear surface. A barrier film and a heat sealing layer are disposed onto the first and second basins.
10/03/13
20130256336
Reclosable pouring element with barrier film and a support wall
A reclosable pouring element for liquids contained in packagings, in particular liquid food, including a base body, which has a pouring opening, an external thread and a flange for connection to the packaging, a cutting ring, which has a cutting edge and a projection, and a screw lid, which has an internal thread and an actuator, the pouring opening being closed by a barrier film. To achieve improved protection of the barrier film against damage while still having a reliable opening function of the pouring element, it is proposed that the base body has a support wall, on which the barrier film rests..
09/26/13
20130252002
Gas barrier film, method of producing a gas barrier film, and electronic device
Provided is a gas barrier film including a base, a first barrier layer containing silicon which is formed on at least one surface of the base, and a second barrier layer containing silicon ox nitride which is formed on the first barrier layer. The ater vapor transmission rate (g/m2/day) at 40° c.
09/26/13
20130250427
Autostereoscopic three-dimensional image display device
An autostereoscopic three-dimensional image display device including a first light guide plate having a first surface and a second surface, the second surface being provided with a first prism changing a path of light input from a first light source on a side of the first light guide plate toward the first surface; a second light guide plate having a third surface and a fourth surface, the fourth surface being provided with a second prism changing a path of light from a second light source on a side of the second light guide plate toward the third surface; a barrier film between the first and second light guide plates and interrupting part of light from the first light guide plate; and a lenticular film above the third surface of the second light guide plate and refracting a path of light input from the second light guide plate.. .
09/19/13
20130244079
Edge barrier film for electronic devices
In some embodiments, a first product is provided. The first product may include a substrate, a device having a device footprint disposed over the substrate, and a barrier film disposed over the substrate and substantially along a side of the device footprint.
09/19/13
20130244044
Gas-barrier film, process for producing same, member for electronic device, and electronic device
The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (tg) of more than 130° c., the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. Also provided are a process for producing the same, an electronic device member that includes the gas barrier film, and an electronic device that includes the electronic device member.
09/19/13
20130242562
Glass pane as head-up display
A glass pane is described. The glass pane has at least one pane, and one adhesive layer on the pane.
09/19/13
20130241076
Electronic device with reduced non-device edge area
A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device..
09/19/13
20130240838
Increasing carrier injection velocity for integrated circuit devices
Embodiments of the present disclosure describe structures and techniques to increase carrier injection velocity for integrated circuit devices. An integrated circuit device includes a semiconductor substrate, a first barrier film coupled with the semiconductor substrate, a quantum well channel coupled to the first barrier film, the quantum well channel comprising a first material having a first bandgap energy, and a source structure coupled to launch mobile charge carriers into the quantum well channel, the source structure comprising a second material having a second bandgap energy, wherein the second bandgap energy is greater than the first bandgap energy.
09/12/13
20130237840
Dressing for an electromagnetic spectrum sensor
An epidermal dressing includes a barrier film and a fitting that cooperates with a sensor emitting and detecting near infrared signals for monitoring an intravascular infusion. The barrier film overlies an epidermal insertion site for a cannula administering the intravascular infusion.
09/12/13
20130237839
Dressing for an insertion site of an intravascular infusate
An epidermal dressing includes a barrier film and a fitting that cooperates with a sensor emitting and detecting near infrared signals for monitoring an intravascular infusion. The barrier film overlies an epidermal insertion site for a cannula administering the intravascular infusion.
09/12/13
20130237838
Dressing for an insertion site of an intravascular infusate
An epidermal dressing includes a barrier film and a fitting that cooperates with a sensor emitting and detecting near infrared signals for monitoring an intravascular infusion. The barrier film overlies an epidermal insertion site for a cannula administering the intravascular infusion.
09/12/13
20130236710
Gas-barrier film, method for producing gas-barrier film, and electronic device
There is provided a gas barrier film which has high barrier performance and is excellent in bending resistance and smoothness as well as cutting processing suitability; a method for producing the gas barrier film; and an electronic device in which the gas barrier film is used. A gas barrier film, comprising a gas barrier layer unit on at least one surface side of a base, wherein the gas barrier layer unit comprises a first barrier layer formed by a chemical vapor deposition method, a second barrier layer obtained by performing conversion treatment to a coating film formed by coating a silicon compound onto the first barrier layer and an intermediate layer between the first barrier layer and the base..
09/12/13
20130235125
Inkjet head and methods for forming same
According to one embodiment, an inkjet head has a pressure chamber configured to pressurize ink, a nozzle connected to the pressure chamber configured to eject the ink, and an electrode arranged in the pressure chamber. The electrode is configured to receive a driving voltage to deform the pressure chamber in order to apply pressure on the ink.
09/05/13
20130230965
Manufacturing method of semiconductor device
According to one embodiment, a manufacturing method of a semiconductor device includes forming a lower mask film on a semiconductor substrate. The method includes forming a barrier film in a first area.
09/05/13
20130228763
Light emitting device and method of manufacturing the same
The present invention has an object of providing a light-emitting device including an oled formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the oled (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided.
08/29/13
20130225743
Barrier film for food packaging
Barrier films are prepared from a blend of two high density polyethylene blend components and a high performance organic nucleating agent. The two high density polyethylene blend components have substantially different melt indices.
08/22/13
20130217225
Method for manufacturing semiconductor device
A method comprising the steps of: forming a copper film (101) on a cu barrier film (100); forming a mask material (102) on the copper film (101); anisotropically etching the copper film (101) until the cu barrier film (100) is exposed, using the mask material (102) as a mask; and removing the mask material (102) and subsequently forming a plating film (104) that contains a substance for suppressing copper diffusion on the anisotropically etched copper film (101), using an electroless plating method that utilizes a selective deposition in which catalytic action occurs with respect to the copper film (101) but not the cu barrier film (100).. .
08/22/13
20130214123
Interference filter, optical module, and electronic apparatus
An interference filter includes a first substrate, a second substrate opposed to the first substrate, a first optical film provided to the first substrate, and a second optical film provided to the second substrate and opposed to the first optical film, at least one of the first and second optical films has a metal film having a reflecting property and a transmitting property with respect to light in a desired wavelength band, a surface and an edge portion of the metal film are covered by a barrier film, and the barrier film is formed of a material having conductivity.. .
08/15/13
20130207176
Semiconductor device and method for manufacturing the same
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a gate pattern formed by patterning a tunnel insulating layer, a conductive film for a floating gate, a dielectric film, a conductive film for a control gate, and a gate metal film sequentially formed on a semiconductor substrate; a first barrier film formed on side walls of the gate metal film; and a second barrier film formed on an upper surface of the gate metal film..
08/15/13
20130207093
Organic light emitting device comprising encapsulating structure
Provided is an organic light emitting diode including an organic light-emitting part including a first electrode, an organic material layer having a light-emitting layer, and a second electrode, and an encapsulating layer included on an entire top surface of the organic light-emitting part. Here, the encapsulating layer has a structure in which at least two of a water barrier film, a glass cap, a metal foil and a conductive film are stacked.
08/08/13
20130200326
Nonvolatile memory cell and nonvolatile memory device including the same
According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode.
08/01/13
20130196136
Fire barrier layer and fire barrier film laminate
A fire barrier laminate is provided for use in thermal and acoustical insulation systems, such as, but not limited to, those used in commercial aircraft.. .
08/01/13
20130196099
Packaging material for boil/retort treatment and pouch
A packaging material for boil/retort treatment having at least a transparent gas barrier film layer, an adhesive layer and a sealant film layer in that order, the packaging material for boil/retort treatment being one in which, when it is heated at 121° c. For 2 hours by contact with a sufficient amount of 95% ethanol in a one-side elution test, the masses of the unreacted residual ε-caprolactam and ω-laurolactam eluting into the 95% ethanol are no greater than 0.15 mg and no greater than 0.04 mg, respectively, per square inch of the sealant film layer, and a pouch comprising the material..
08/01/13
20130192335
Vacuum thermal-insulation material, and a device and method for assessing the degree of vacuum in the vacuum insulation material by using the frequency response method
Disclosed herein is a vacuum insulation material, which includes a barrier film and a core, wherein a rigid body thinner than a reference thickness or a getter harder than a reference hardness is formed between the barrier film and the core, or the rigid body thinner than the reference thickness is formed on the getter formed between the barrier film and the core to ensure surface flatness and surface hardness of the vacuum insulation material.. .


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Barrier Film topics: Barrier Film, Electronic Device, Polysilazane, Ultraviolet, Light Guide Plate, Light Guide, Semiconductor Substrate, Semiconductor, Integrated Circuit, Plastic Film, Transparency, Inkjet Head, Electromagnetic Spectrum

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