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Antiparallel patents

      

This page is updated frequently with new Antiparallel-related patent applications.




 Stabilizing layered structure for magnetic tape heads patent thumbnailStabilizing layered structure for magnetic tape heads
An apparatus according to one embodiment includes an array of magnetic read transducers each having a current-perpendicular-to-plane sensor, magnetic shields on opposite sides of the sensor in an intended direction of media travel thereacross, and a stabilizing layered structure between at least one of the magnetic shields and the sensor. The stabilizing layered structure has an antiferromagnetic layer, a first ferromagnetic layer adjacent the antiferromagnetic layer, and a second ferromagnetic layer.
International Business Machines Corporation


 Power module patent thumbnailPower module
A power module includes an inverter circuit and a pair of conductors that sandwich the inverter circuit. The inverter circuit includes a positive bus bar, a negative bus bar, output bus bars, and element pairs.
Toyota Jidosha Kabushiki Kaisha


 Symmetric mems piezoelectric accelerometer for lateral noise patent thumbnailSymmetric mems piezoelectric accelerometer for lateral noise
Apparatus and associated methods relate to maximizing a signal to noise ratio of an accelerometer by inhibiting signals arising from movements of a proofmass in directions perpendicular to a direction of intended sensitivity. The direction of intended sensitivity of the accelerometer is along an axis of the proofmass.
Rosemount Aerospace Inc.


 Magnetic storage device and manufacturing  magnetic storage device patent thumbnailMagnetic storage device and manufacturing magnetic storage device
According to one embodiment, a magnetic storage device includes a first and a second magnetoresistive effect element, which are disposed in an arrangement pattern including a plurality of arrangement areas, and in each of which a second ferromagnetic layer and a third ferromagnetic layer are antiferromagnetically coupled. A magnetization orientation of the third ferromagnetic layer of the first magnetoresistive effect element is antiparallel to a magnetization orientation of the third ferromagnetic layer of the second magnetoresistive effect element.
Kabushiki Kaisha Toshiba


 Manufacturing  liquid crystal panel patent thumbnailManufacturing liquid crystal panel
A manufacturing method of a liquid crystal panel is provided with steps of: providing an array substrate having a first electrode with a plurality of slots and a second electrode thereon, and a color filter substrate; applying a first photo alignment film to the array substrate, and performing a first irradiation treatment on the first photo alignment film to have a first pretilt angle; applying a second photo alignment film to the color filter substrate, and performing a second irradiation treatment on the second photo alignment film to have a second pretilt angle antiparallel to the first pretilt angle; sealing a liquid crystal molecule and a photopolymerizable monomer within a space between the first photo alignment film and the second photo alignment film to form a liquid crystal panel; and performing a third irradiation treatment on the liquid crystal panel to carry out a polymerization of the photopolymerizable monomer.. .
Shenzhen China Star Optoelectronics Technology Co.,ltd.


 Beta sheet tapes ribbons in tissue engineering patent thumbnailBeta sheet tapes ribbons in tissue engineering
There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure.. .
University Of Leeds


 Welding power supply with half bridge patent thumbnailWelding power supply with half bridge
A method and apparatus for providing welding-type power is disclosed. It includes an input circuit, a dc bus, an output circuit, and a control module.
Iiiinois Tool Works Inc.


 Magnetic tunnel junction device patent thumbnailMagnetic tunnel junction device
The output voltage of an mram is increased by means of an fe(001)/mgo(001)/fe(001) mtj device, which is formed by microfabrication of a sample prepared as follows: a single-crystalline mgo (001) substrate is prepared. An epitaxial fe(001) lower electrode (a first electrode) is grown on a mgo(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum.
National Institute Of Advanced Industrial Science And Technology


 Mobile zoom using multiple optical image stabilization cameras patent thumbnailMobile zoom using multiple optical image stabilization cameras
In some embodiments, a first camera unit of a multifunction device for capturing a first image of a first visual field includes a first actuator for moving a first optical package. A second camera unit includes a second actuator for moving a second optical package.
Apple Inc.


 Spin-transfer torque memory (sttm) devices having magnetic contacts patent thumbnailSpin-transfer torque memory (sttm) devices having magnetic contacts
Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (mtj), such as spin-transfer torque memory (sttm) devices, having magnetic contacts. The techniques include incorporating an additional magnetic layer (e.g., a layer that is similar or identical to that of the magnetic contact layer) such that the additional magnetic layer is coupled antiferromagnetically (or in a substantially antiparallel manner).
Intel Corporation


Electric power converter and mri system comprising such converter

The present specification relates to an electric power converter, comprising at least a set of four controllable power switches, arranged in an h-bridge or a functionally equivalent circuit comprising two switching legs of two series switches connected to a voltage source, each power switch comprising an antiparallel diode, a controller configured for controlling the switches with a blanking time, a feedback loop for the load current, characterised by a first bias current injection circuit, coupled to the central point of the first leg of the h-bridge and a second bias current injection circuit, coupled to the central point of the second leg of the h-bridge. The specification further relates to a mri scanner, provided with an electric power converter according to any of the preceding claims, for driving the gradient coils..
Prodrive Technologies B.v.

Systems and methods for implementing magnetoelectric junctions including integrated magnetization components

Systems and methods in accordance with embodiments of the invention implement magnetoelectric junctions that include integrated magnetization components. In one embodiment, a magnetoelectric junction includes: a first fixed layer; a free layer; a dielectric layer disposed between the first fixed layer and the free layer; at least one magnetization layer that is disposed proximate the free layer; where: the first fixed layer is magnetized in a first direction; the free layer can adopt a magnetization direction that is either substantially parallel with or antiparallel with the first direction; the at least one magnetization layer is magnetized in a second direction that is orthogonal to the first direction; the magnetoelectric junction is characterized by a vcma coefficient of at least approximately 80 fj/v·m; and the magnetoelectric junction is configured such that a voltage pulse of a proper length in time can cause the free layer to invert its magnetization direction..
Inston Inc.

Light valve device, infrared display apparatus, dedicated spectacles and system

The present invention discloses a light valve device, an infrared display apparatus, dedicated spectacles and a system, to realize with naked eyes, only a black picture plane without any information can be seen on a display screen, but with spectacles, effective image information can be seen on the display screen; as a result, the image display is more concealed. The light valve device comprises a first liquid crystal cell and a second liquid crystal cell that are oppositely disposed to each other; the first liquid crystal cell and the second liquid crystal cell are both formed by two substrates that are oppositely arranged, and alignment films with parallel or antiparallel alignment directions are formed on the inside the two substrates respectively; cholesteric liquid crystals with opposite arrangement and rotation directions are filled in the first liquid crystal cell and the second liquid crystal cell respectively..
Boe Technology Group Co., Ltd.

Lighting system including a protection circuit, and corresponding protecting light sources from electrostatic discharges

Various embodiments may relate to a lighting system including a string of light sources connected in series between a first terminal and a second terminal, wherein at least one electrical contact of the string of light sources is accessible. The system further includes a protection circuit that protects the light sources from an electrostatic discharge applied to the electrical contact that is accessible.
Osram Gmbh

Trenched and implanted bipolar junction transistor

The present invention concerns a monolithically merged trenched-and-implanted bipolar junction transistor (ti-bjt) with antiparallel diode and a method of manufacturing the same. Trenches are made in a collector, base, emitter stack downto the collector.
United Silicon Carbide, Inc.

System and soft switching power inversion

A power inversion system includes an input and output coupleable to a dc power and an ac load, respectively, and a power inverter including a plurality of phase legs each having two bridge legs coupled in parallel with at least two switch and antiparallel diode pairs coupled in series. The system also includes a plurality of inductors, with at least one inductor coupled between a midpoint of each bridge leg and an lcl filter, the inductors in each phase leg being magnetically coupled.
General Electric Company

Storage element and storage apparatus

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween.
Sony Corporation

Bidirectional power switch with improved switching performance

A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor.
Stmicroelectronics (tours) Sas

Beta sheet tapes ribbons in tissue engineering

There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure wherein the material comprises a pair of self assembling complementary polypeptides.. .
University Of Leeds

Control magnetoresistance effect element and control device for magnetoresistance effect element

A control method for a magnetoresistance effect element and a control device for the magnetoresistance effect element that provide a higher writing speed and lower power consumption. When the magnetization direction of a second magnetic layer is nearly parallel to the magnetization direction of a first magnetic layer, a first voltage is applied across the first and second magnetic layer so that the magnetization direction of the second magnetic layer is reversed by modifying the direction of the magnetization easy axis thereof, followed by the application of a second voltage.
Tohoku University

Integrated electronic device comprising a temperature transducer and determining an estimate of a temperature difference

An integrated electronic device including an electronic component and a temperature transducer formed in a first die. The temperature transducer including a first diode and a second diode which are connected in antiparallel..
Stmicroelectronics S.r.l.

Electric motor and generator

Disclosed are various embodiments for a direct current electric motor and generator. The motor comprises a housing.

Submodule for modular multi-level converter and application thereof

A sub-module for a modular multi-level converter, a converter comprising the sub-module, and an application thereof. The sub-module comprises a first switching module (1), a second switching module (2), a direct current capacitor (4), and a third switching module (3).
Huazhong University Of Science And Technology

Magnetic storage device

A magnetic storage device of one embodiment includes a first and second magnetoresistive effect elements. The first magnetoresistive element includes a first magnetic layer having a first coercivity, a second magnetic layer having a second coercivity higher than the first coercivity, and a third magnetic layer having a third coercivity higher than the second coercivity.

Systems and methods for implementing robust magnetoelectric junctions

Robust magnetoelectric junctions (mejs) are disclosed. In one embodiment, an mej includes: a first fixed layer; a free layer; a seed layer; a cap layer; and a dielectric layer disposed between the first fixed layer and the free layer; where: one of the seed layer and the cap layer is disposed adjacently to a ferromagnetic layer; the first fixed layer is magnetized in a first direction; the free layer can adopt a magnetization direction that is either substantially parallel with or substantially antiparallel with the first direction; when a potential difference is applied across the mej, the coercivity of the free layer is reduced for the duration of the application of the potential difference; and at least one of the seed layer and the cap layer includes one of: molybdenum, tungsten, iridium, bismuth, rhenium, and gold..
Inston Inc.

High-performance device for protection from electrostatic discharge

A semiconductor device for protection from electrostatic discharge includes a number of modules for protection from electrostatic discharge. Each module includes a thyristor having terminals and a gate, and a diode coupled in antiparallel to the terminals of the thyristor.
Stmicroelectronics Sa

Radiation-emitting semiconductor chip and producing radiation-emitting semiconductor chips

A radiation-emitting semiconductor chip having a semiconductor body including a semi-conductor layer sequence having an active region that generates radiation, a first semiconductor layer of a first conductor, and a second semiconductor layer of a second conductor different from the first conductor, and having a carrier on which the semiconductor body is arranged, wherein a pn junction is formed in the carrier, the carrier has a first contact and a second contact on a rear side facing away from the semiconductor body, and the active area and the pn junction connect to one another in antiparallel in relation to the forward-bias direction by the first contact and the second contact.. .
Osram Opto Semiconductors Gmbh

Beta sheet tapes ribbons in tissue engineering

There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure wherein the material comprises a pair of self assembling complementary polypeptides.. .

Electronic device

This patent document provides an electronic device capable of improving the characteristics of a variable resistance element. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a variable resistance element capable of being included in the semiconductor memory, and including a fixed layer, a tunnel barrier layer, and a variable layer laminated therein, wherein the variable resistance element is capable of allowing a slope of a graph of a switching current density as a function of an external magnetic field to be proportional to the square of “h/hk” when the magnetization directions of the fixed layer and the variable layer are switched from a parallel state to an antiparallel state.

Tunneling magnetoresistive (tmr) sensor with a soft bias layer

An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (afm), a first antiparallel magnetic layer (ap1 ) positioned above the afm layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the ap1 in the first direction, a second antiparallel magnetic layer (ap2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the ap2 in the first direction, and a free layer positioned above the barrier layer in the first direction.
Hgst Netherlands B.v.

Sensor assembly for use in sensor bearings

A sensor assembly for use in sensor bearings, the sensor assembly comprising at least two sensor units configured to be arranged on a ring of the sensor bearing in different angular positions with regard to the rotation axis of the bearing. Each of the sensor units includes at least one hall sensor plate.
Aktiebolaget Skf

Sub-module, protection unit, converter, and control method thereof

Disclosed are a submodule structure formed of an energy storage element, a first turn-off device, a second turn-off device, a third turn-off device, a freewheeling diode, a series resistor, and diodes respectively in antiparallel connection with the turn-off devices, and a converter completely or partially formed of the submodules. Also disclosed are a relevant protection unit and a control method for the converter.
Nr Electric Co., Ltd.

Power limiter

Embodiments provide a limiter circuit that includes a power splitter coupled with a plurality of antiparallel diode pairs. In some embodiments, the power splitter may be part of a first stage of the limiter circuit.

Magnetoresistive element, manufacturing magnetoresistive element, magnetic head, and magnetic recording and reading apparatus

A magnetoresistive element according to an embodiment includes: a multilayer element including a first magnetic layer, a magnetization direction of the first magnetic layer being pinned, a nonmagnetic layer disposed on the first magnetic layer, a second magnetic layer disposed in a first region on the nonmagnetic layer, a magnetization direction of the second magnetic layer being pinned and antiparallel to the magnetization direction of the first magnetic layer, and a third magnetic layer disposed in a second region that is different from the first region on the nonmagnetic layer near one of two opposite end faces of the nonmagnetic layer, a magnetization direction of the third magnetic layer being changeable by an external magnetic field, a lower face of the nonmagnetic layer being in contact with an upper face of the first magnetic layer.. .
Kabushiki Kaisha Toshiba

Single-package bridge-type magnetic field sensor

A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package.
Multidimension Technology Co., Ltd.

Semiconductor device

A semiconductor device includes: a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a schottky barrier diode formed in the first well; and a pn junction diode formed in the second well, with an impurity concentration of the pn junction thereof set higher than an impurity concentration of the schottky junction of the schottky barrier diode, and being connected antiparallel with the schottky barrier diode.. .
Fujitsu Semiconductor Limited

Magnetic head and magnetic recording and reproducing apparatus

A magnetic head of an embodiment includes a stack, side shields, and a first and a second magnetic shield. The stack includes a pin layer having a fixed magnetization direction, a first free layer having a magnetization direction to change in accordance with an external magnetic field, a second free layer antiferromagnetically exchange-coupled with the first free layer and having a magnetization direction to change in accordance with the field, and an antiferromagnetic layer exchange-coupled with the second free layer.
Kabushiki Kaisha Toshiba

Rotation rate sensor having a substrate having a main extension plance for detecting a rotation rate

A rotation-rate sensor having a substrate with main extension plane, for detecting a rotation rate, extending in a direction parallel/orthogonal to the main plane; the sensor including a primary/secondary pair of seismic masses; the primary pair having first/second primary masses; the secondary pair having first/second secondary masses; the first/second primary masses being movable relative to the substrate along a primary deflection direction extending parallel to the main plane; the first/second secondary masses being movable relative to the substrate along a secondary deflection direction extending parallel to the main plane; the first/second primary masses and the first/second primary masses being movable antiparallel or parallel to one another corresponding to the deflection direction, essentially extending orthogonally to the secondary deflection direction; and the primary pair and/or secondary pair being drivable so that, based on sensor rotation, the coriolis force leads to deflection of the first/second primary masses and/or the first/second secondary masses.. .
Robert Bosch Gmbh

Beta sheet tapes ribbons in tissue engineering

There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure.. .
University Of Leeds

Single-chain antiparallel coiled coil proteins

The present invention relates to single-chain proteins of the formula hrs1-l1-hrs2-l2-hrs3, wherein hrs1, hrs2 and hrs3 are heptad repeat sequences and l1 and l2 are structurally flexible linker sequences, and wherein hrs1, hrs2 and hrs3 form a thermodynamically stable triple-stranded, antiparallel, alpha-helical coiled coil structure in aqueous solution. The invention also relates to amino acid sequence variants, conditions and methods to obtain such proteins and variants, and usages thereof, especially their usage as scaffolds and as therapeutic products..
Complix Nv

Bidirectional switch

A bidirectional switch is formed in a semiconductor substrate of a first conductivity type. The switch includes first and second thyristors connected in antiparallel extending vertically between front and rear surfaces of the substrate.
Stmicroelectronics (tours) Sas

Bidirectional switch

A bidirectional switch formed in a substrate includes first and second main vertical thyristors in antiparallel connection. A third auxiliary vertical thyristor has a rear surface layer in common with the rear surface layer of the first thyristor.
Stmicroelectronics (tours) Sas

Magnetic tunnel junction device

The output voltage of an mram is increased by means of an fe(001)/mgo(001)/fe(001) mtj device, which is formed by microfabrication of a sample prepared as follows: a single-crystalline mgo (001) substrate is prepared. An epitaxial fe(001) lower electrode (a first electrode) is grown on a mgo(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum.
National Institute Of Advanced Industrial Science And Technology

Magneto-electronic devices and methods of production

A magneto-electronic device includes a first electrode, a second electrode spaced apart from the first electrode, and an electric-field-controllable magnetic tunnel junction arranged between the first electrode and the second electrode. The electric-field-controllable magnetic tunnel junction includes a first ferromagnetic layer, an insulating layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the insulating layer.
The Johns Hopkins University

All-electric spin field effect transistor

An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.. .
National Cheng Kung University

Reducing source loading effect in spin torque transfer magnetoresistive random access memory (stt-mram)

A memory cell includes a magnetic tunnel junction (mtj) structure that includes a free layer coupled to a bit line and a pinned layer. A magnetic moment of the free layer is substantially parallel to a magnetic moment of the pinned layer in a first state and substantially antiparallel to the magnetic moment of the pinned layer in a second state.
Qualcomm Incorporated

Power measuring device with internal calibration of diode detectors

A measuring device for measuring a power of a measurement signal comprises an analog-processing unit (1) and a calibration unit (5) for the implementation of a calibration procedure. The analog-processing unit (1) provides two detector diodes (14, 15) connected in an antiparallel manner relative to a signal input (10) and an amplifier (50) for the amplification of signals which are derived from output signals of the detector diodes (14, 15).
Rohde & Schwarz Gmbh & Co. Kg

Voltage adjusting apparatus

Provided are: a second serial transformer 21 having a primary side connected in series to a secondary side of a first serial transformer 13 having a primary side connected in series to the system and to a secondary side of a parallel transformer 14 having a primary side connected in parallel to the system; and a first ac/dc converter 22 having an ac side connected to a secondary side of the second serial transformer 21. The first ac/dc converter 22 has a switching element 22c connected between an ac terminal 22a and a dc terminal 22b, an antiparallel diode 22d, and a capacitor 22e..

Magnetic head and magnetic recording and reproducing apparatus

A magnetic head of an embodiment includes a stack, side shields, and a first and a second magnetic shield. The stack includes a pin layer having a fixed magnetization direction, a first free layer having a magnetization direction to change in accordance with an external magnetic field, a second free layer antiferromagnetically exchange-coupled with the first free layer and having a magnetization direction to change in accordance with the field, and an antiferromagnetic layer exchange-coupled with the second free layer.
Kabushiki Kaisha Toshiba

Beta sheet tapes ribbons in tissue engineering

There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure wherein the material comprises a pair of self assembling complementary polypeptides.. .
University Of Leeds

Thermally assisted mram cell and writing a plurality of bits in the mram cell

Method for writing and reading a plurality of data bits to a magnetic random access memory (mram) cell including a magnetic tunnel junction including a reference magnetic layer having a reference magnetization, a tunnel barrier layer, and a saf storage magnetic layer including a first and second storage magnetization being coupled antiparallel through a storage coupling layer and freely orientable at a high temperature threshold. The method includes: heating the magnetic tunnel junction to the high temperature threshold; and applying a write magnetic field to orient the first and second storage magnetization; wherein the high temperature threshold includes one of a first or third high temperature threshold such as to orient the first storage magnetization respectively antiparallel or parallel to the second storage magnetization; or a second high temperature threshold such as to orient the first storage magnetization with an angle below 180° with respect to the second storage magnetization..

Magnetic logic unit (mlu) cell and amplifier having a linear magnetic signal

A magnetic logic unit (mlu) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer.
Crocus Technology Sa

Af-coupled dual side shield reader with af-coupled usl

The embodiments disclosed generally relate to a read head sensor in a magnetic recording head. The read head sensor comprises side shields in addition to the upper and lower shields.
Hgst Netherlands B.v.

Iii-nitride based esd protection device

An esd (electrostatic discharge) protection device includes a first iii-nitride p-i-n diode and a second iii-nitride p-i-n diode connected to the first iii-nitride p-i-n diode in an antiparallel arrangement configured to provide voltage clamping at 5v or less under forward bias of either the first or second iii-nitride p-i-n diode for transient current in both forward and reverse directions. A corresponding method of manufacturing the esd protection device is also provided..
Infineon Technologies Ag

Memory element and memory apparatus

According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure.
Sony Corporation

Optoelectronic component with protective circuit

An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein each diode has two electrical connections, each electrical connection is led to a contact area, the contact areas are arranged on an underside of the first carrier, and a second carrier, wherein at least two zener diodes are arranged in the second carrier, the zener diodes have further electrical connections, each further electrical connection is led to a further contact area, the further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and is fixedly connected to the second carrier, and the zener diodes antiparallelly connect to the diodes.. .
Osram Opto Semiconductors Gmbh

Levitation device with horizontal spin axis

A levitation device including an object levitatable at a predetermined position, wherein the object comprises a spinning magnet, the spinning magnet having a substantially horizontal spin axis defining an axial direction and the spinning magnet having a magnetization direction parallel to the spin axis, the device further comprising: a pusher magnet arrangement configured to produce a magnetic field at the predetermined position that is in the opposite direction to the magnetization direction of said spinning magnet; a lifter magnet arrangement lower than and to either side of the predetermined position, having a magnetization direction parallel to the magnetization direction of the spinning magnet, and having a recess under the predetermined position; and a puller magnet arrangement above said predetermined position and having a magnetization direction antiparallel to the magnetization direction of the spinning magnet.. .
Isis Innovation Limited

Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning field

In one general embodiment, a device includes an antiferromagnetic layer; a first stitch layer exchange coupled with the antiferromagnetic layer, the first stitch layer having a magnetic orientation substantially parallel to a magnetic orientation of the antiferromagnetic layer; a second stitch layer exchange coupled with the first stitch layer and having a magnetic orientation substantially antiparallel to the magnetic orientation of the first stitch layer; a pinned layer structure exchange coupled with the second stitch layer; a free layer; and a spacer layer between the free layer and the pinned layer structure. An end of the antiferromagnetic layer facing a sensing face of the device is recessed from the sensing face..
Hgst Netherlands B.v.

Drive system for a traction vehicle

A drive system for a traction vehicle equipped with a current collector, the drive system comprising an electric traction motor, a traction inverter, a traction battery pack, a charger for the battery pack, a coupling member, a current filter, a brake resistor, a brake inverter, a current collector, a electromagnetic interference filter, and a main circuit breaker, the electric traction motor being connected to the traction inverter and the brake resistor being connected to the brake inverter. The drive system further includes a dc rated intermediate circuit being in connection with the main circuit breaker, the brake inverter and the traction inverter on the one hand and with the traction battery pack on the other hand, the latter being connected to said intermediate circuit through an antiparallel combination consisting of the coupling member and the traction battery charger and further through the current filter, said coupling member being composed of a simple power diode..
Inekon Group, A.s.

Light valve device, infrared display apparatus, dedicated spectacles and system

The present invention discloses a light valve device, an infrared display apparatus, dedicated spectacles and a system, to realize with naked eyes, only a black picture plane without any information can be seen on a display screen, but with spectacles, effective image information can be seen on the display screen; as a result, the image display is more concealed. The light valve device comprises a first liquid crystal cell and a second liquid crystal cell that are oppositely disposed to each other; the first liquid crystal cell and the second liquid crystal cell are both formed by two substrates that are oppositely arranged, and alignment films with parallel or antiparallel alignment directions are formed on the inside the two substrates respectively; cholesteric liquid crystals with opposite arrangement and rotation directions are filled in the first liquid crystal cell and the second liquid crystal cell respectively..
Boe Technology Group Co., Ltd.

Method for making a scissoring-type current-perpendicular-to-the-plane (cpp) magnetoresistive sensor with exchange-coupled soft side shields

A method for making a scissoring type current-perpendicular-to-the-plane magnetoresistive sensor with exchange-coupled soft side shields uses oblique angle ion milling to remove unwanted material from the side edges of the upper free layer. All of the layers making up the sensor stack are deposited as full films.
Hgst Nertherlands B..v.

Ac/dc voltage transformer and operation therefor

A method for actuating an ac/dc voltage transformer is specified, which has a dc voltage output between which at least one series circuit of at least two capacitors and at least one series circuit of n switching elements is arranged, where n≧4. A connecting point of the switching elements is connected to a connection of an ac voltage input between n/2 switching elements.
Fronius International Gmbh

Current-perpendicular-to-the-plane (cpp) magnetoresistive (mr) sensor having an antiparallel free (apf) structure with improved magnetic stability

A current-perpendicular-to-the-plane magnetoresistive sensor has an antiparallel free (apf) structure and soft side shields wherein the upper free layer (fl2) of the apf structure is magnetically coupled antiparallel to the top shield and a top shield seed layer via a nonmagnetic antiparallel coupling (apc) layer. In one embodiment the antiparallel coupling is through an antiferromagnetic-coupling (afc) layer that provides a dominant antiferromagnetic indirect exchange coupling of fl2 to the top shield.
Hgst Netherlands B.v.

Antiparallelogram folding structure, stroller, chair, stool, table, pram, trolley

A foldable bearing structure includes a set of coplanar wheels and a folding device including a set of lower arms; at least a rear upper arm; an antiparallelogram deformable in a vertical plane, the antiparallelogram including two crossed segments; at least a first sidebar located in the vertical plane; the antiparallelogram deformed by folding between a first position, corresponding to an unfolded of the structure and a second position corresponding to a folded position, the transition from the first position to the second position reducing the wheelbase of the structure.. .

Rc-igbt with freewheeling sic diode

A semiconductor module as disclosed can include a reverse conducting transistor, with a gate, a collector and an emitter providing a reverse conducting diode between collector and emitter; at least one freewheeling diode connected antiparallel to the transistor having a forward voltage drop higher than the reverse conducting diode during a static state; and a controller to turn the transistor on and off. The controller can apply a pulse to the transistor gate before the reverse conducting diode enters a blocking state, such that when the reverse conducting diode enters the blocking state, a forward voltage drop of the reverse conducting diode is higher than of the at least one freewheeling diode..
Abb Technology Ag

Hybrid energy storage system

A power converter is provided. The power converter includes a converter leg comprising a plurality of active power link modules coupled to each other.
General Electric Company

Antiparallelogram folding structure, stroller, chair, pram, table trolley

The foldable bearing structure includes a set of coplanar wheels and a folding device including a set of lower arms; at least a rear upper arm; an antiparallelogram deformable in a vertical plane, the antiparallelogram including two crossed segments; at least a first sidebar located in the vertical plane; the antiparallelogram deformed by folding between a first position corresponding to an unfolded of the structure and a second position corresponding to a folded position, the transition from the first position to the second position reducing the wheelbase of the structure.. .

Three-dimensional magnetic memory with multi-layer data storage layers

Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory.
Hgst Netherlands B.v.

Magentic domain wall motion memory and write the same

A magnetic domain wall motion memory according to an embodiment includes: a magnetic memory nanowire; a write magnetic wire intersecting with the magnetic memory nanowire; an intermediate joining portion provided in an intersection region between the write magnetic wire and the magnetic memory nanowire; adjacent pinning portions placed on one of the same side and the opposite side of the write magnetic wire as and from the magnetic memory nanowire; a read unit attached to the magnetic memory nanowire; a pair of first electrodes that applies a write current to the write magnetic wire; and a pair of second electrodes that applies a current for causing the magnetic memory nanowire to move a magnetic domain wall, wherein contact faces of the write magnetic wire in contact with the adjacent pinning portions have magnetization configurations antiparallel to each other.. .
Kabushiki Kaisha Toshiba

Converter controller with half bridge adaptive dead time circuit and method

The present disclosure relates to a controller, a circuit and method for controlling a power converter using pulse width modulation (pwm). At least one logic block (13, 15, 16) of the controller is configured to remove a command (4) which is configured to control the other power semiconductor switch (2) in a half-bridge (1,2) so that the other power semiconductor switch (2) remains in a non-conductive state while an antiparallel diode (6) allows an electric current (5) to pass in one direction, called the diode's forward direction, while blocking current in the opposite direction.
American Power Conversion Corporation

Ligand having three finger structure and a detecting a molecule by using thereof

The present invention improves in vitro virus synthesis efficiency and stability of mrna derived from screened cdna in a cdna display method to improve the efficiency and reliability of the production of a peptide by a molecular evolutionary engineering technique. Provided is a ligand which comprises three fingers formed from antiparallel β-sheets and a loop region intercalated between the antiparallel β-sheets, wherein at least a fingertip part formed by the loop region of each of the fingers is bound to the target molecule, and wherein the ligand comprises the amino acid sequence of seq id no: 1.
Nikon Corporation

Power dimmer

A control circuit varies the power of a load powered by an alternating voltage, comprising: a first thyristor and a first diode connected in antiparallel between first and second nodes, the cathode of the first diode being on the side of the first node; a second thyristor and a second diode connected in antiparallel between the second node and a third node, the cathode of the second diode being on the side of the third node; third and fourth diodes connected in antiseries between the first and third nodes, the cathodes of the third and fourth diodes being connected to a fourth node; a transistor between the second and fourth nodes; and a control unit for controlling the first and second thyristors and the transistor.. .
Stmicroelectronics (tours) Sas

Semiconductor device

A semiconductor device includes: a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a schottky barrier diode formed in the first well; and a pn junction diode formed in the second well, with an impurity concentration of the pn junction thereof set higher than an impurity concentration of the schottky junction of the schottky barrier diode, and being connected antiparallel with the schottky barrier diode.. .
Fujitsu Semiconductor Limited

Power conversion vehicle and vehicle

According to an embodiment, a power conversion apparatus for a vehicle is provided with a single-phase two-level converter and a single-phase three-level converter. The single-phase two-level converter is composed of a capacitor, first to fourth controllable switching devices, diodes connected in antiparallel with the controllable switching devices, respectively.
Kabushiki Kaisha Toshiba

Memory element and memory apparatus

According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure.

Led lighting unit with color and dimming control

Method and apparatus for a led lighting unit (200), including an inverter circuit (210) electrically coupled to a led module (220) having a pair of antiparallel led groupings. The inverter circuit (210) provides for color and/or dimming control of the led module (220).

Current sensor

A first magnetoelectric conversion element group including magnetoelectric conversion elements, and a second magnetoelectric conversion element group including magnetoelectric conversion elements are arranged across a cutout of a wiring board. The first and second groups are arranged line-symmetrically with respect to a first imaginary line.

D-aptide and retro-inverso aptide with maintained target affinity and improved stability

The present invention is characterized by a d-aptamer-like peptide (d-aptide) or retro-inverso aptide which specifically binds to a target comprising: (a) a structure stabilizing region comprising parallel, antiparallel or parallel and antiparallel d-amino acid strands with interstrand noncovalent bonds; and (b) a target binding region i and a target binding region ii comprising randomly selected n and m d-amino acids, respectively, and coupled to both ends of the structure stabilizing region. The d-aptide or retro-inverso aptide has the sequence of the same or opposite direction to l-aptide, wherein the stability to proteases is improved while maintaining the affinity to a target compared with l-aptide.

Method of fabricating a magnetoresistive element

A method of fabricating a magnetoresistive element, the method comprising: forming a first plurality of layers without breaking a vacuum, the first plurality of layers sequentially comprising: a first nonmagnetic conductive layer; a first ferromagnetic layer comprising an amorphous structure and a first magnetization direction; a nonmagnetic tunnel barrier layer; a second ferromagnetic layer comprising an amorphous structure and a second magnetization direction, and a getter layer having a direct contact with the second ferromagnetic layer; annealing the first plurality of layers; removing the getter layer and a portion of the second ferromagnetic layer adjacent to the getter layer; forming above the second ferromagnetic layer a second plurality of layers such that interface between the second ferromagnetic layer and the second plurality of layers is formed without breaking a vacuum after removing the getter layer and the portion of the second ferromagnetic layer, the second plurality of layers sequentially comprising: a third magnetic layer comprising a third fixed magnetization direction directed substantially perpendicular to a substrate surface, and a second nonmagnetic conductive layer; wherein the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer crystallize during annealing into a coherent body-centered cubic (bcc) structure with (001) plane oriented, the first magnetization direction and the second magnetization direction are directed substantially perpendicular to the substrate surface, the second magnetization direction is fixed and is directed antiparallel to the third magnetization direction, and the first magnetization direction is reversible.. .

Storage element and storage apparatus

[solving means] a storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween.

Optical semiconductor device including antiparallel semiconductor light-emitting element and schottky diode element

An optical semiconductor device includes a semiconductor support substrate of a conductivity type having a first resistivity, a semiconductor layer of the conductivity type formed on the semiconductor support substrate and having a second resistivity higher than the first resistivity, a first power supply terminal having a first metal in schottky barrier contact with the semiconductor layer along with the semiconductor support substrate, so that a schottky diode element is constructed by the first power supply terminal and the semiconductor layer along with the semiconductor support substrate, a second power supply terminal having a second metal in ohmic contact with the semiconductor support substrate, and a semiconductor light-emitting element connected between the first and second power supply terminals, the semiconductor light-emitting element being antiparallel with the schottky diode with respect to the first and second power supply terminals.. .

Beta sheet tapes ribbons in tissue engineering

There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure.. .

Device for protecting against an electrical overcurrent in at least one electronic switching branch, conversion system including such a protection device, and associated control method

The protection device includes, for each switching branch, at least one second controllable switch, each second switch being connected to the intermediate terminal or to an electrode of said diode in antiparallel to the first switch, each second switch being able to switch, under action of a controller, from an on state to an off state to protect said diode from the overcurrent, means for measuring a magnitude relative to a current able to circulate in each diode, and means for controlling each second switch, based on the measured magnitude.. .

Matrix converter

A matrix converter includes input terminals, output terminals, a power conversion circuit, and a snubber circuit. The power conversion circuit includes bidirectional switches of which each includes antiparallel connection circuits connected serially.

Power module with a multi-resonance circuit (embodiments)

The invention relates to power electronics. The use of said invention in autonomous inverter and pulse regulator circuits makes it possible to reduce dynamic losses and additional losses of conductivity in mains switches and to prevent high-frequency interference during switching of said switches.

Installation and process for removing contaminants from aquatic fluids

A system for at least partially removing a contaminant in a contaminated fluid includes a reaction vessel with a fluid inlet and a fluid outlet. The contaminated fluid is conductable in a fluid flow direction which has at least a component oriented antiparallel to the force of gravity.

Mr device with synthetic free layer structure

A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel coupling layers.

Multilevel electronic power converter

At least one intermediate semiconductor (8) formed by two controlled semiconductors with antiparallel diodes and connected in anti-series, connected between the intermediate dc voltage terminal (5) and the intermediate terminal (10).. .

Magnetic memory element and magnetic memory

A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable..

Spin mosfet and reconfigurable logic circuit

A spin mosfet includes a first ferromagnetic layer having a fixed magnetization direction, a first tunnel barrier, a second ferromagnetic layer having a variable magnetization direction, and a nonmagnetic semiconductor layer provided in that order on a substrate. The nonmagnetic semiconductor layer has lower and upper faces and a side faces serving as a channel.

Stacking nucleic acid and methods for use thereof

The present invention provides a novel modified oligonucleotide monomer useful in molecular biological techniques such as capture and/or detection of nucleic acids, amplification of nucleic acids and sequencing of nucleic acids. The modified oligonucleotide monomer comprises an intercalator that can intercalate into an antiparallel duplex from the major groove..

Integrating a trench-gated thyristor with a trench-gated rectifier

An integrated trench-mos-controlled-thyristor plus trench gated diode combination, in which the trenches are preferably formed at the same time. A backside polarity reversal process permits a backside p+ region in the thyristor areas, and only a backside n+ region in the diode areas (for an n-type device).

Optoelectronic component and operating an optoelectronic component

An optoelectronic component includes a carrier on which at least one first light-emitting semiconductor chip and one first light-absorbing semiconductor chip connected antiparallel to the at least one first light-emitting semiconductor chip, at least one second light-emitting semiconductor chip and one second light-absorbing semiconductor chip connected antiparallel to the at least one second light-emitting semiconductor chip, wherein the semiconductor chips are arranged on the carrier such that light from each light-emitting semiconductor chip falls on at least one of the light-absorbing semiconductor chips not connected to the respective light-emitting semiconductor chip, and the light-absorbing semiconductor chips are formed as protection diodes.. .

Beta sheet tapes ribbons in tissue engineering

There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure.. .

Microwave assisted magnetic recording head having spin torque oscillator, and magnetic recording apparatus

To provide a spin torque oscillator which is adapted to high data transfer rates and which can perform assisted magnetic recording of sufficient magnitude. A spin torque oscillator is provided with a stacked spin injection layer and a high frequency magnetic field generation layer.

Piezoelectric multi-layer component

A piezoelectric multi-layer component includes a piezoelectric main body, which has an inlet area and an outlet area. In the outlet area or in the inlet area at least two adjacent layers are polarized antiparallel to each other and at least two adjacent layers are polarized parallel to each other..

Reducing source loading effect in spin torque transfer magnetoresistive random access memory (stt-mram)

A memory cell comprises a magnetic tunnel junction (mtj) structure that includes a free layer coupled to a bit line and a pinned layer. A magnetic moment of the free layer is substantially parallel to a magnetic moment of the pinned layer in a first state and substantially antiparallel to the magnetic moment of the pinned layer in a second state.

Current-perpendicular-to-plane (cpp) read sensor with co-fe buffer layers

A current-perpendicular-to-plane (cpp) read sensor with co—fe buffer layers is proposed to improve pinning and magnetoresistance properties. The read sensor comprises first and second co—fe buffer layers in the lower and upper portions of a keeper layer structure, respectively, third and fourth co—fe buffer layers in the lower and upper portion of a reference layer structure, respectively, and a fifth co—fe buffer layer in the lower portion of a sense layer structure.



Antiparallel topics:
  • Antiparallel
  • Magnetic Field
  • Magnetic Tunnel Junction
  • Tunnel Junction
  • Magnetoresistance
  • Magnetic Material
  • Crystallin
  • Semiconductor
  • Memory Cell
  • Random Access
  • Evaporation
  • Microfabrica
  • Spin Torque
  • Torque Transfer
  • Memory Cells


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