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Thermoelectric evaluation and manufacturing methods

Date/App# patent app List of recent Antimony-related patents
07/17/14
20140200301
 Anti-frost coating patent thumbnailAnti-frost coating
[means for resolution] provided is a coating composition for preventing frost from enlarging and becoming enormous by making the frost deposited on a surface of an object to be easily peeled and removed from the surface by forming a coating film on the surface of the object, in which 0.2% by mass to 0.5% by mass of antimony-doped tin oxide or indium tin oxide that absorbs an infrared ray so as to hardly influence the hue, with respect to components of a coating material, is added to a water-repellent coating composition such as a fluororesin-based coating material, thereby making the frost adhered on the surface easily peeled from the surface.. .
07/17/14
20140200292
 Flame-retardant agent and flame-retardant resin composition patent thumbnailFlame-retardant agent and flame-retardant resin composition
The present invention provides a composite flame retardant which can be produced without using any toxic metal such as antimony trioxide or any halogen such as bromine and chlorine and can exhibit excellent flame retardancy compared with magnesium hydroxide when added in a smaller amount; and a flame retardant resin composition having excellent flame retardancy and excellent physical properties. The present invention relates to a flame retardant including: (a) 100 parts by mass of a reaction product of piperazine with one phosphorus compound selected from phosphoric acid, pyrophosphoric acid, and polyphosphoric acid; (b) 10 to 1000 parts by mass of a reaction product of melamine with a polyacid selected from cyanuric acid, phosphoric acid, pyrophosphoric acid, and polyphosphoric acid; and (c) 0.1 to 100 parts by mass of a reaction product of calcium or magnesium with silicic acid..
07/17/14
20140196274
 Thermoelectric evaluation and manufacturing methods patent thumbnailThermoelectric evaluation and manufacturing methods
A means for determining the electrical resistance and resistivity of thermoelectric material allows quality control at all steps in the construction of a bismuth telluride and antimony telluride thermoelectric generator. The method involves measuring negative thermoelectric voltage with no current flowing and then a measure of negative thermoelectric voltage while forcing known current through the material in the same direction as shorted to accurately determine thermoelectric resistance.
06/26/14
20140179973
 Method of olefin metathesis using a catalyst based on a spherical material comprising oxidised metal particles trapped in a mesostructured matrix patent thumbnailMethod of olefin metathesis using a catalyst based on a spherical material comprising oxidised metal particles trapped in a mesostructured matrix
A process for metathesis of olefins, bringing olefins into contact with a catalyst activated by heating to a temperature in the range 100° c. To 1000° c.
06/26/14
20140178761
 Fabrication method for metal battery electrode with pyrolyzed coating patent thumbnailFabrication method for metal battery electrode with pyrolyzed coating
A method is provided for forming a metal battery electrode with a pyrolyzed coating. The method provides a metallorganic compound of metal (me) and materials such as carbon (c), sulfur (s), oxygen (o), and combinations of the above-listed materials, expressed as mexcynzsxxoyy, where me is a metal such as tin (sn), antimony (sb), or lead (pb), or a metal alloy.
06/19/14
20140166339
 Fire and water resistant cable patent thumbnailFire and water resistant cable
The present invention relates to lead-free, halogen-free, and antimony-free cables containing insulations made of (a) a polyolefin; (b) a maleic anhydride modified polyolefin; (c) a butadiene-styrene copolymer; (d) a non-halogen flame retardant; and (e) a silane compound. The cable contains a fire retardant tape between the conductor and the insulation when the insulation thickness is greater than about 75 mils for a 1/0 awg cable..
06/19/14
20140166338
 Fire and water resistant cable cover patent thumbnailFire and water resistant cable cover
The present invention relates to cable covering compositions (insulation or jacket) for wires and cables that are fire and water resistant. Significantly, the composition contains no significant amount of lead, halogen, and antimony; and is flame retardant (ul 1685 cable tray bum test); and has excellent mechanical and water resistance properties.
06/19/14
20140166088
 Photovoltaic device patent thumbnailPhotovoltaic device
An article, such as a photovoltaic device, and methods for making such articles, are provided. For example, one embodiment is an article comprising a plurality of layers comprising an absorber layer and a window stack.
06/12/14
20140163714
 Thermoelectric evaluation and manufacturing methods patent thumbnailThermoelectric evaluation and manufacturing methods
A means for determining the electrical resistance and resistivity of thermoelectric material allows quality control at all steps in the construction of a bismuth telluride and antimony telluride thermoelectric generator. The method involves measuring negative thermoelectric voltage with no current flowing and then a measure of negative thermoelectric voltage while forcing known current through the material in the same direction as shorted to accurately determine thermoelectric resistance.
06/12/14
20140162070
 Resin composition for laser direct structuring, resin-molded article, and method for manufacturing molded article with plated layer patent thumbnailResin composition for laser direct structuring, resin-molded article, and method for manufacturing molded article with plated layer
Provided is a resin composition excellent in mechanical strength while maintaining lds activity. The resin composition for laser direct structuring comprises, relative to 100 parts by weight of a polycarbonate resin component, 10 to 100 parts by weight of a glass filler and 1 to 30 parts by weight of a laser direct structuring additive, wherein the polycarbonate resin component consists of 80 to 30% by weight of a polycarbonate resin and 20 to 70% by weight of a styrene-based resin, or consists of a polycarbonate; and the laser direct structuring additive comprises antimony and tin..
06/12/14
20140159150
Semiconductor device and semiconductor device manufacturing method
In aspects of the invention, an n-type epitaxial layer that forms an n− type drift layer is formed on the upper surface of an n-type semiconductor substrate formed by being doped with a high concentration of antimony. A p-type anode layer is formed on a surface of the n− type drift layer.
06/05/14
20140154834
Use of dopants with different diffusivities for solar cell manufacture
A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell.
05/29/14
20140147679
Sheet of float glass having high energy transmission
The invention relates to a sheet of extra-clear glass, that is to say a sheet of glass having high energy transmission, which can be used in particular in the field of solar energy. More specifically, the invention relates to a sheet of float glass having a composition which comprises, in a content expressed as percentages of the total weight of glass: sio2 60-75%; al2o3: 0-10%; b2o3: 0-5%; cao: 0-15%; mgo: 0-10%; na2o: 5-20%; k2o: 0-10%; bao: 0-5%; total iron (expressed as fe2o3): 0.001 to 0.06%; antimony (expressed as sb2o3): 0.02 to 0.07%..
05/29/14
20140147332
White antimicrobial copper alloy
Copper based alloys exhibiting a white/silver hue. The alloys contain copper, nickel, zinc, manganese, sulfur, and antimony..
05/22/14
20140141959
Beta-quartz glass-ceramics with a controlled transmission curve and a high iron oxide content; articles comprising said glass-ceramics, and precursor glasses
β-quartz lithium aluminosilicate (las) glass-ceramics contain neither arsenic oxide nor antimony oxide, are fined with tin oxide and include vanadium oxide, chromium oxide and a high iron oxide content (>950 ppm), and have a controlled transmission curve. Articles such as cook-tops can be made from such glass-ceramics..
05/22/14
20140141929
Hardened silver coated journal bearing surfaces and method
An article comprises a metal alloy substrate and a plated wear interface layer disposed over a surface of the metal alloy substrate. The wear interface layer has a chemical composition including between about 0.005 wt % and about 0.050 wt % of antimony (sb), and the balance silver (ag) and incidental impurities..
05/22/14
20140141542
Methods for depositing films on sensitive substrates
Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties.
05/22/14
20140141227
Beta-quartz glass-ceramics with a controlled transmission curve and a high content of iron oxide and of tin oxide; articles in said glass-ceramics, precursor glasses
β-quartz lithium aluminosilicate (las) glass-ceramics contain neither arsenic oxide nor antimony oxide, are fined with tin oxide and include vanadium oxide, chromium oxide and a high iron oxide content (>1500 ppm), and have a controlled transmission curve. Articles such as cook-tops can be made from such glass-ceramics..
05/22/14
20140140881
Method for producing a thermoelectric solid element
The present invention relates to a method 931 for producing a solid element, which comprises the thermoelectrically active material beta-zn4sb3. The method utilizes that is possible to directly synthesize and press pellets of zn4sb3 starting from powders of zn and sb, by mixing 930 powders of zn and sb so as to obtain a mixed powder comprising elemental zinc and elemental antimony, placing 932 the mixed powder in a container and simultaneously applying 936 a pulsed current, such as to heat up the powders, and applying 938 a pressure such as to compact the powder mix.
05/15/14
20140135201
Transparent, colorless, tin-fined las glass-ceramics with improved microstructure and optical properties
Transparent, essentially colorless and non-diffusing β-quartz glass-ceramics and glass compositions for forming the same have a composition, free of arsenic oxide, antimony oxide and rare earth oxides except for inevitable trace amounts, which contains, expressed as percentages by weight of oxides 62-72% of sio2, 20-23% of al2o3, 2.8-5% of li2o, 0.1-0.6% of sno2, 1.9-4% of tio2, 1.6-3% of zro2, less than 0.4% of mgo, 2.5-6% of zno and/or bao and/or sro, less than 250 ppm of fe2o3; and their crystallites present in the β-quartz solid solution have an average size of less than 35 nm. The glass-ceramics exhibit low thermal expansion and are easily obtained at an industrial scale..
05/15/14
20140132221
Composition, energy storage device, and related process
A positive electrode composition is provided. The positive electrode composition includes at least one electroactive metal selected from the group consisting of titanium, vanadium, niobium, molybdenum, nickel, iron, cobalt, chromium, manganese, silver, antimony, cadmium, tin, lead, copper, zinc, and combination thereof, an alkali metal halide, and aluminum, present in an amount of at least 0.5 weight percent, based on the weight of the positive electrode composition.
05/15/14
20140130731
Use of surfactants to control island size and density
Methods of controlling island size and density on an omvpe growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an omvpe grown ingan thin film may be controlled by adding an antimony surfactant at a critical concentration level..
05/08/14
20140124725
Resistive random access memory cells having doped current limiting layers
Provided are semiconductor devices, such as resistive random access memory (reram) cells, that include current limiting layers formed from doped metal oxides and/or nitrides. These current limiting layers may have resistivities of at least about 1 ohm-cm.
05/01/14
20140120012
Method for selective precipitation of iron, arsenic and antimony
A method for selectively processing a polymetallic oxide solution containing a plurality of base metals comprising at least one of: cu, co, ni, zn associated with iron, comprising acid leaching the solution; recovering a filtered leachate; oxidizing the leachate; and adjusting the ph of the leachate in presence of a complexing agent; wherein the acidic solution is one of: i) a hydrochloric acid solution and ii) a sulfuric acid solution at a ph lower than about 1.5, and the complexing agent is one of: i) ammonium chloride and ii) ammonium sulfate, the step of adjusting the ph comprising raising the ph to a range between about 2.5 and about 3.5.. .
05/01/14
20140119981
Constructing bismuth antimony thin films with anisotropic single-dirac cones
A bi1-xsbx thin film is provided that includes a dirac-cone with different degrees of anisotropy in their electronic band structure by controlling the stoichiometry, film thickness, and growth orientation of the thin film, so as to result in a consistent inverse-effective mass tensor including non-parabolic or linear dispersion relations.. .
05/01/14
20140117848
Electrodeless lamp
An electrodeless discharge lamp suitable for the use in solar simulators, with an emission spectrum following, as much as possible, the am1.5g standard. According to a preferred embodiment the lamp has a quartz bulb is filled with a composition comprising an inert gas, for example n2, he, ne, ar, kr, xe or a mixture thereof, and a first and a second active components, the first active component being an antimony or bismuth halide or a mixture of antimony halides; while the second component is sni2 a mixture of halides of: in, sn, ag, bi, cu.
04/24/14
20140114000
Flameproofed alicyclic polyimide resin composition and thin-walled molded body of same
The present invention relates to an alicyclic polyimide resin composition including 100 parts by mass of an alicyclic polyimide resin (a) having a specific structure and from 1 to 13 parts by mass of a cyano-modified cyclic phenoxy phosphazene compound (b), and a thin-wall molded article formed of the alicyclic polyimide resin composition which is produced by casting a solution of the resin composition and then heating the cast solution. The present invention aims at obtaining an alicyclic polyimide resin composition that is imparted with a good flame retardancy without adding a halogen-based flame retardant, an antimony-based flame retardant, an inorganic metal hydrate, a phosphoric acid salt, etc., thereto, and also is excellent in transparency, heat resistance and insulating property, and a thin-wall molded article obtained from the resin composition..
04/10/14
20140100106
Catalyst for decomposing nitrogen oxide and preparation method thereof
Provided is a catalyst including: a support including titanium oxide; an active catalyst component including vanadium oxide; and a co-catalyst including antimony and cerium, in which the catalyst is included in a denox reduction reaction that decomposes nitrogen oxide. The catalyst may improve sulfur poisoning tolerance characteristics while improving the denox efficiency at a temperature in a wide range from low temperature to high temperature..
04/10/14
20140099849
Pigment paste composition
A pigment paste composition includes a) a flame retardant including a combination of antimony oxide, zinc borate, and zinc sulfide; b) a coloring agent; c) a solvent comprising a plasticizer; and d) a wetting and dispersing agent. Further included is a fabric including at least one fiber coated with the aforementioned pigment paste composition dispersed within a polymer base..
04/10/14
20140097170
Iron
The invention relates to an electrical iron. An iron comprises a sole plate, of a glass or ceramic substrate bearing an electrical heating element.
03/27/14
20140085573
Transparent electrode for electronic displays
A transparent electrode is described and includes metallic nanowires and a polymeric overcoat layer for protecting the nanowires from corrosion and abrasion. The polymeric overcoat layer includes nanoparticles selected from the group consisting of antimony tin oxide, zinc oxide and indium tin oxide, and has a sheet resistance of greater than about 107 ohm/sq.
03/27/14
20140084219
Doped multiwalled carbon nanotube fibers and methods of making the same
In some embodiments, the present invention pertains to carbon nanotube fibers that include one or more fiber threads. In some embodiments, the fiber threads include doped multi-walled carbon nanotubes, such as doped double-walled carbon nanotubes.
03/13/14
20140072756
Growth of antimony doped p-type zinc oxide nanowires for optoelectronics
In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (zn(no3)2), hexamethylenetetramine (hmta) and polyethylenemine (800 mw pei) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (naoh), glycolic acid (c2h4o3) and antimony acetate (sb(ch3coo)3) in water is prepared.
03/13/14
20140071528
Optical layered body, polarizer, and image display device
An optical layered body including a light-transmitting substrate and a hard coat layer on at least one surface of the light-transmitting substrate, wherein the hard coat layer contains antimony pentoxide and a urethane resin, and the antimony pentoxide is dispersed in the hard coat layer while forming a three-dimensional net structure.. .
03/06/14
20140061623
Antimony-free glass, antimony-free frit and a glass package that is hermetically sealed with the frit
An antimony-free glass comprising teo2 and/or bi2o3 suitable for use in a frit for producing a hermetically sealed glass package is described. The hermetically sealed glass package, such as an oled display device, is manufactured by providing a first glass substrate plate and a second glass substrate plate and depositing the antimony-free frit onto the first substrate plate.
03/06/14
20140061588
Group iii-v compound semiconductor photo detector, method of fabricating group iii-v compound semiconductor photo detector, photo detector, and epitaxial wafer
An object of the present invention is to provide a group iii-v compound semiconductor photo detector comprising an absorption layer having a group iii-v compound semiconductor layer containing sb as a group v constituent element, and an n-type inp window layer, resulting in reduced dark current. The inp layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a gaassb layer of the absorption layer 21.
02/27/14
20140058088
Hydride removal and methane conversion process using a supersonic flow reactor
Methods and systems are provided for converting methane in a feed stream to acetylene. The method includes removing at least a portion of hydrides of arsenic, phosphorus, antimony, silicon, and boron from a hydrocarbon stream.
02/27/14
20140058015
Insert molded article
Provided is an insert molded article provided with a resin member, which has superior heat shock resistance, flame resistance, and hydrolysis resistance, and an insert member. The insert molded article is provided with the insert member and resin member, and a polybutylene terephthalate resin composition in which a halogenated epoxy compound (b) having a specific molecular weight, an antimony oxide compound (c), and a carbodiimide compound (d) are mixed into a polybutylene terephthalate resin (a) is used for the starting material for the resin member.
02/27/14
20140057112
Copper containing infrared reflective pigment compositions
Pigment compositions are described that advantageously increase total solar reflectance. Also described are methods of making pigment compositions.
01/30/14
20140030133
Cast iron containing niobium and component
Known cast iron alloys have use limits in respect of the temperature. An alloy (in a weight percentage) including silicon 2.0%-4.5%, carbon 2.9%-4.0%, niobium 0.05%-0.7%, molybdenum 0.3%-1.5%, optionally cobalt 0.1%-2.0%, manganese≦0.3%, nickel≦0.5%, magnesium≦0.07%, phosphorus≦0.05%, sulphur≦0.012%, chromium≦0.1%, antimony≦0.004%, and, iron, is provided..
01/30/14
20140027679
Bimodal type anode active material and lithium secondary battery including the same
Where m is any one independently selected from the group consisting of titanium (ti), tin (sn), copper (cu), lead (pb), antimony (sb), zinc (zn), iron (fe), indium (in), aluminum (al), and zirconium (zr) or a mixture of two or more thereof; and x, y, and z are determined according to an oxidation number of m.. .
01/30/14
20140027346
Spherical material comprising metallic nanoparticles trapped in a mesostructured oxide matrix and its use as a catalyst in refining processes
An inorganic material is described, constituted by at least two elementary spherical particles, each of said spherical particles comprising metallic nanoparticles having at least one band with a wave number in the range 750 to 1050 cm−1 in raman spectroscopy and containing one or more metals selected from vanadium, niobium, tantalum, molybdenum and tungsten, said metallic nanoparticles being trapped in a mesostructured matrix based on an oxide of an element y selected from silicon, aluminium, titanium, tungsten, zirconium, gallium, germanium, tin, antimony, lead, vanadium, iron, manganese, hafnium, niobium, tantalum, yttrium, cerium, gadolinium, europium and neodymium. Said matrix has pores with a diameter in the range 1.5 to 50 nm and amorphous walls with a thickness in the range 1 to 30 nm.
01/23/14
20140024216
Gst cmp slurries
The present invention provides chemical-mechanical polishing (cmp) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (gst) alloy. The cmp compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor.
01/23/14
20140024173
Method of making a multicomponent film
Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit germanium tellurium (gete), antimony tellurium (sbte), antimony germanium (sbge), germanium antimony tellurium (gst), indium antimony tellurium (ist), silver indium antimony tellurium (aist), cadmium telluride (cdte), cadmium selenide (cdse), zinc telluride (znte), zinc selenide (znse), copper indium gallium selenide (cigs) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices..
01/09/14
20140010750
Preparation of nanocrystals for thermoelectric and solar cell applications using sulfide-based nanocrystal precursors in colloidal systems
Disclosed herein is a method of synthesizing a nanocrystal. The method can include reacting a bismuth material, an antimony material, and a ligand together with a heat source.
01/02/14
20140005303
Antimony trioxide free flame retardant thermoplastic composition
There is provided herein a flame retardant thermoplastic composition comprising: a. At least one thermoplastic polyester or polyamide; b.
01/02/14
20140003123
Low power phase change memory cell
A memory may include two electrodes and phase change material having an amorphous reset state and a partially crystalized set state, coupled between the two electrodes. The phase change material in the set state may have a highly nonlinear current-voltage response in a subthreshold voltage region.
01/02/14
20140002311
Thermoplastic resin composition, resin molded article, and method of manufacturing resin molded article with plated layer
Provided is a thermoplastic resin molded article excellent in bending strength, flexural modulus and charpy impact strength, on which the plated layer may be formed in a successful manner. The thermoplastic resin composition for laser direct structuring comprising, per 100 parts by weight of the thermoplastic resin, 10 to 150 parts by weight of an inorganic fiber and 1 to 30 parts by weight of a laser direct structuring additive, the laser direct structuring additive containing at least one of copper, antimony and tin, and having a mohs hardness 1.5 or more smaller than the mohs hardness of the inorganic fiber..
12/26/13
20130344278
Matrazen-oder kissenbezugsstoff
Described is a single or multilayer mattress or pillow cover fabric (1, 10) with at least one knitted or woven layer made of a polyester yarn, with the knitted or woven layer being knitted or woven entirely from an antimony-free polyester yarn. Further described is a mattress or pillow cover and a protective mattress or pillow pad..
12/19/13
20130334516
Optoelectronic component having doped layers
The invention relates to an organic electronic or optoelectronic component, comprising an electrode and a counter-electrode and a layer system between the electrode and the counter-electrode, wherein the layer system contains at least one organic layer and at least one doped layer, wherein the dopant in the doped layer represents a stronger lewis acid than antimony pentafluoride (sbf5) or a stronger lewis base than 1,8-bis(dimethylamino)napthalene based on the calculation of fluoride ion affinity.. .
12/19/13
20130334469
Al-sb-te phase change material used for phase change memory and fabrication method thereof
The present invention discloses an al—sb—te phase change material used for pcm and fabrication method thereof. Said phase change material, which can be prepared by pvd, cvd, ald, pld, ebe, and ed, is a mixture of three elements aluminum (al), antimony (sb) and tellurium (te) with a general formula of alx(sbyte1)1-x, where 0<x≦0.85, 0.67≦y≦7.
12/19/13
20130333748
Low softening point glass composition, bonding material using same adn electronic parts
A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° c. Or lower..
12/12/13
20130330570
Energy-shielding plastics film
A plastics film with improved energy-shielding properties, suitable for application on a transparent or translucent surface, such as glass, and which is at least 50% transparent for visible light, further characterized in that it includes at least one plastic carrier layer with on top thereof as a functional layer a metallic layer consisting of antimony and/or arsenic together with indium and/or gallium, wherein the plastics film contains a total of indium (in), gallium (ga), antimony (sb) and arsenic (as) together, which are present as an alloy, such as indium andmonide, gallium andmonide, indium arsenide, indium gallium arsenide and/or gallium arsenide, of at least 4.0 ppm by weight and at most 25.0 ppm by weight. A glass plate to which the film is attached, is described as are objects provided with the glass plate.
12/05/13
20130323075
Nickel-chromium-molybdenum-vanadium alloy and turbine component
A nicrmov alloy and a turbine component are disclosed. The nicrmov alloy includes at least about 0.06%, at least about 3.40% nickel, between about 0.22% and about 0.30% carbon, up to about 0.60% molybdenum, up to about 0.15% vanadium, up to about 2.00% chromium, up to about 0.012% phosphorus, up to about 0.007% sulfur, up to about 0.10% silicon, up to about 0.002% antimony, up to about 0.008% arsenic, up to about 0.012% tin, and up to about 0.015% aluminum and/or is resistant to embrittlement at temperatures above 700° f..
11/28/13
20130313652
Semiconductor structure with improved channel stack and method for fabrication thereof
A method for fabricating a semiconductor structure with a channel stack includes forming a screening layer under a gate of a pmos transistor element and a nmos transistor element, forming a threshold voltage control layer on the screening layer, and forming an epitaxial channel layer on the threshold control layer. At least a portion of the epitaxial channel layers for the pmos transistor element and the nmos transistor element are formed as a common blanket layer.
11/21/13
20130310560
Processes for preparing amines and catalysts for use therein
Processes for preparing an amine are described which comprise reacting a primary or secondary alcohol, aldehyde and/or ketone with hydrogen and a nitrogen compound selected from the group of ammonia, primary and secondary amines, in the presence of a zirconium dioxide-, copper- and nickel-containing catalyst. The catalytically active composition of the catalyst, before its reduction with hydrogen, comprises oxygen compounds of zirconium, of copper, of nickel, in the range from 1.0 to 5.0% by weight of oxygen compounds of cobalt, calculated as coo, and in the range from 0.2 to 5.0% by weight of oxygen compounds of sulfur, of phosphorus, of gallium, of lead and/or of antimony, calculated in each case as h2so4, h3po4, ga203, pbo and sb203 respectively..
11/14/13
20130302618
High-strength alkali-aluminosilicate glass
A high-strength alkali-aluminosilicate glass, characterized by excellent meltability, fineability. And processibility, exhibits the following formula: sio2 60.5 to 69.0 weight percent al2o3 7.0 to 11.8 weight percent b2o3 0 to 4.0 weight percent mgo 2.0 to 8.5 weight percent cao 0 to 4.0 weight percent zno 0 to 5.0 weight percent zro2 0 to 3.0 weight percent na2o 15.0 to 17.5 weight percent k2o 0 to 2.7 weight percent li2o 0 to 2.0 weight percent and from 0 to 1.5 weight percent of a fining agents such as as2o3, sb2o3 ceo2, sno2, cl−, f−, (so4)2− and combinations thereof.
11/07/13
20130295771
Methods and systems for polishing phase change materials
A slurry for polishing a phase change material, such as ge—sb—te, or germanium-antimony-tellurium (gst), includes abrasive particles of sizes that minimize at least one of damage to (e.g., scratching of) a polished surface of phase change material, an amount of force to be applied during polishing, and a static etch rate of the phase change material, while optionally providing selectivity for the phase change material over adjacent dielectric materials. A polishing method includes applying a slurry with one or more of the above-noted properties to a phase change material, as well as bringing the polishing pad into frictional contact with the phase change material.
11/07/13
20130295717
Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry
A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized sb(or)3 to a substrate, where r is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony..
11/07/13
20130295294
Electroless copper plating bath and electroless copper plating method
Provided are an electroless copper plating bath and an electroless copper plating method using the electroless copper plating bath, the electroless copper plating bath not containing formaldehyde; being usable under approximately neutral ph conditions; improving plating bath stability; and capable of forming a plating film with a good thickness while controlling deposition outside a pattern. The electroless copper plating bath according to the present invention contains a water-soluble copper salt, and amine borane or a substituted derivative thereof as a reducing agent; does not contain formaldehyde; and has a ph of 4 to 9, wherein polyaminopolyphosphonic acid as a complexing agent, an anionic surface-active agent, an antimony compound, and a nitrogen-containing aromatic compound are contained..
11/07/13
20130294965
Antimony-modified low-lead copper alloy
Alloys and methods for forming alloys of copper, including red brass, and yellow brass, having sulfur and antimony.. .
10/31/13
20130284989
Method for preparing and use of sb2te3 nanocrystals in thermoelectric materials
Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the second precursor is chosen from the group consisting of a tellurium precursor and a selenium precursor. The method further includes combining the precursor materials, heating the combination of precursor materials, and isolating a plurality of semiconductor nanocrystals from the heated precursor materials..
10/31/13
20130284673
Mitigating leaching of arsenic and antimony from activated carbon
Activated carbon having a low contact ph and their use in the purification of water, as well as methods for making such low contact ph activated carbon and filters and methods for purifying water are described herein. The methods for preparing such low contact ph activated carbons provides an effective and less costly means for preparing activated carbons for purification processes..
10/24/13
20130281741
Process for transformation of lignocellulosic biomass or cellulose by catalysts based on tin oxide and/or antimony oxide and a metal that is selected from the groups 8 to 11
The invention relates to a process for transformation of lignocellulosic biomass or cellulose using heterogeneous catalysts that are based on tin oxide and/or antimony oxide, dispersed on a substrate and containing at least one element in the particular metal state. The use of these catalysts makes it possible to obtain directly upgradable products, in particular hydroxyacetone and propylene glycol with high selectivity..
10/24/13
20130281734
Process for converting cellulose or lignocellulosic biomass using stable non-zeolite solid lewis acids based on tin or antimony alone or as a mixture
The invention relates to a process for transformation of lignocellulosic biomass or cellulose using stable non-zeolitic heterogeneous catalysts that are based on tin and/or antimony, preferably dispersed on a substrate. The use of these catalysts makes it possible to obtain directly lactic acid with high selectivity while limiting the production of oligosaccharides and soluble polymers..


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Antimony topics: Zinc Oxide, Antimony Trioxide, Semiconductor, Heterogeneous, Irradiation, Lead Dioxide, Sulfuric Acid, Phosphorus, Magnesium Hydroxide, Activated Carbon, Electronic Device, Semiconductors, Glass Composition, Silicon Dioxide, Lactic Acid

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