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Annealing patents



      
           
This page is updated frequently with new Annealing-related patent applications. Subscribe to the Annealing RSS feed to automatically get the update: related Annealing RSS feeds. RSS updates for this page: Annealing RSS RSS


Laser annealing apparatus

Apparatus and method for the treatment of a flat steel product, taking place in throughput

Date/App# patent app List of recent Annealing-related patents
07/24/14
20140206190
 Silicide formation in high-aspect ratio structures patent thumbnailnew patent Silicide formation in high-aspect ratio structures
Embodiments of the present invention include methods of forming a silicide layer on a semiconductor substrate. In an exemplary embodiment, a metal layer may first be deposited above a semiconductor substrate using a chemical vapor deposition process with a metal amidinate precursor and then the semiconductor substrate may be annealed, causing the semiconductor substrate to react with the metal layer forming a metal-rich silicide layer on the semiconductor substrate.
07/24/14
20140206188
 Method of forming a metal silicide layer patent thumbnailnew patent Method of forming a metal silicide layer
A method for forming a metal silicide layer is disclosed. The method includes the steps of: forming a first metal layer with a thickness less than 10 nm on a silicon substrate; forming a second metal layer with a thickness more than 10 nm on the first metal layer; annealing the metal layers and the silicon substrate, so that a part of the second metal layer penetrates through the first metal layer, and both the part of the second metal layer penetrating through the first metal layer and a part of the first metal layer react with the silicon substrate to form the metal silicide layer, while the remaining part of the first and second metal layers form a third metal layer; and removing the third metal layer, so that the metal silicide layer can be formed in the semiconductor substrate..
07/24/14
20140206115
 Optoelectronic semiconductor device and the manufacturing method thereof patent thumbnailnew patent Optoelectronic semiconductor device and the manufacturing method thereof
The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 volt.. .
07/24/14
20140205485
 Soft magnetic powders and compacts patent thumbnailnew patent Soft magnetic powders and compacts
A water atomized fe powder for a magnetic compact reduced in deformation resistance during molding and annealing temperature for removing strains is provided. A compact having improved magnetic properties is also provided.
07/24/14
20140203482
 Apparatus and method for the treatment of a flat steel product, taking place in throughput patent thumbnailnew patent Apparatus and method for the treatment of a flat steel product, taking place in throughput
An apparatus and a method for the treatment of a flat steel product, taking place in throughput. The apparatus includes an indirectly heated annealing furnace chamber, a conveyor device for continuously conveying the flat steel product over a conveyor path leading from an entry to an exit of the annealing furnace chamber, and nozzle arrangements for feeding atmosphere gas, which is reactive in relation to the flat steel product, into the annealing furnace chamber.
07/24/14
20140203337
 Method of forming gate dielectric layer and method of fabricating semiconductor device patent thumbnailnew patent Method of forming gate dielectric layer and method of fabricating semiconductor device
A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process.. .
07/24/14
20140202601
 Forged tial components, and method for producing same patent thumbnailnew patent Forged tial components, and method for producing same
The present invention relates to a method for producing forged components of a tial alloy, in particular turbine blades, wherein the components are forged and undergo a two-stage heat treatment after the forging process, the first stage of the heat treatment comprising a recrystallization annealing process for 50 to 100 minutes at a temperature below the γ/α transition temperature, and the second stage of the heat treatment comprising a stabilization annealing process in the temperature range of from 800° c. To 950° c.
07/24/14
20140202599
 Method for producing oriented magnetic steel sheet patent thumbnailnew patent Method for producing oriented magnetic steel sheet
In a method of producing a grain-oriented electrical steel sheet by subjecting a coil for grain-oriented electrical steel sheet after cold rolling to a primary recrystallization annealing, applying an annealing separator thereon, and conducting final annealing, rapid heating is conducted at a rate of not less than 80° c./sec from 500° c. To 700° c.
07/24/14
20140202213
 Laser annealing apparatus patent thumbnailnew patent Laser annealing apparatus
A laser annealing apparatus includes a lens unit configured to transmit a laser beam to be irradiated onto an irradiation target; a lens unit housing accommodating the lens unit and having an opening configured to allow the laser beam to pass through the opening; a blocking plate configured to block at least a portion of the laser beam reflected by the irradiation target after being transmitted through the lens unit to the irradiation target; and a cooling unit between the blocking plate and the lens unit housing.. .
07/17/14
20140200425
 Encapsulated electronics patent thumbnailEncapsulated electronics
An eye-mountable device includes an electrochemical sensor embedded in a polymeric material configured for mounting to a surface of an eye. The electrochemical sensor includes a working electrode and a reference electrode that reacts with an analyte to generate a sensor measurement related to a concentration of the analyte in a fluid to which the eye-mountable device is exposed.
07/17/14
20140200424
Encapsulated electronics in an eye-mountable device
An eye-mountable device includes an electrochemical sensor embedded in a polymeric material configured for mounting to a surface of an eye. The electrochemical sensor includes a working electrode and a reference electrode that reacts with an analyte to generate a sensor measurement related to a concentration of the analyte in a fluid to which the eye-mountable device is exposed.
07/17/14
20140199822
Methods of forming semiconductor device structures including an insulative material on a semiconductive material, and related semiconductor device structures and semiconductor devices
A method of forming a semiconductor device structure. The method comprises forming an insulative material on a semiconductive material, and microwave annealing at least an interface between the insulative material and the semiconductive material.
07/17/14
20140197416
Memories and methods of forming thin-film transistors using hydrogen plasma doping
Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon.
07/17/14
20140197037
Treatment method of electrodeposited copper for wafer-level-packaging process flow
A method of treating a copper containing structure on a substrate is disclosed. The method includes electrodepositing the copper containing structure on a substrate, annealing the copper containing structure, and forming an interface between a pad of the copper containing structure and a solder structure after anneal.
07/10/14
20140194548
Sequentially cross-linked polyethylene
A method of producing an improved polyethylene, especially an ultra-high molecular weight polyethylene utilizes a sequential irradiation and annealing process to form a highly cross-linked polyethylene material. The use of sequential irradiation followed by sequential annealing after each irradiation allows each dose of irradiation in the series of doses to be relatively low while achieving a total dose which is sufficiently high to cross-link the material.
07/10/14
20140194316
Enhanced multiplex fish
Subject of the present invention is a combination of nucleic acid molecules capable of hybridizing with a target nucleic acid sequence. In order to overcome problems with the reproducibility of fish assays and to decrease assay time, hairpin probes are used in combination with helper probes annealing adjacent to the target site of the hairpin probe..
07/10/14
20140194271
Tuning tzc by the annealing of ultra low expansion glass
The disclosure describes a silica-titania glass having a selected titania content in the range of 5-20 wt % that has zero crossover temperature (tzc) associated with the selected titania content withing this range, and the tzc is adjustable by ±10° c. Or less.
07/10/14
20140193964
Method of manufacturing semiconductor device
The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps.
07/10/14
20140193943
Method for fabricating cu-in-ga-se film solar cell
A method for fabricating a cu—in—ga—se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a cu—in—ga—se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an in2se3 or zns buffer layer on the cu—in—ga—se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the in2se3 or zns buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer..
07/10/14
20140193823
Primer set and a method for identification of meat species
The invention discloses a primer set for identification of meat species. The primer set comprises a pair of outer primers used to amplify a sense strand of dna fragment of mitochondrial cytochrome b between positions 51 and 507.
07/10/14
20140193606
Sapphire component with residual compressive stress
A method comprises shaping an aluminum oxide ceramic material into a component for an electronic device. The component has first and second major surfaces.
07/10/14
20140193580
Method for making patterns on the surface of a substrate using block copolymers
A method for making patterns on the surface of a substrate by graphoepitaxy, includes depositing a layer of resin on the surface of the substrate; making patterns in the resin on the surface of a substrate; curing the patterns in the resin by producing a layer of amorphous carbon on the surface of the patterns in the resin; depositing a layer of statistical copolymer after curing the patterns in the resin; grafting the layer of statistical copolymer onto the patterns in the resin by annealing; and depositing a layer of a block copolymer into the spaces defined by the patterns in the resin after curing the patterns and the grafting of the layer of statistical copolymer.. .
07/10/14
20140191618
Poling treatment method, plasma poling device, piezoelectric body and manufacturing method thereof, film forming device and etching device, and lamp annealing device
A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled..
07/10/14
20140190403
Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave
A method of growing high-quality, group-iii nitride, bulk single crystals. The group iii-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group iii-nitride polycrystals or group-iii metal having a grain size of at least 10 microns or more and a seed crystal that is a group-iii nitride single crystal.
07/03/14
20140187054
Methods of patterning block copolymer layers
A method of patterning a block copolymer layer includes: providing a guide pattern on a surface of a substrate, the guide pattern including sidewalls each elongated in a longitudinal direction and spaced apart from each other, a trench defined by a bottom surface and facing surfaces of the sidewalls, and having a uniform width over an entire length thereof in the longitudinal direction, and a latitudinal wall perpendicular to the longitudinal direction of the trench; providing a block copolymer layer on the surface of the substrate; and annealing the block copolymer to cause self-assembly of the block copolymer and to direct the same in the trench. The block copolymer has a microphase-separation into anisotropic discrete domains aligned with a period λo in the trench by the annealing..
07/03/14
20140187038
High temperature tungsten metallization process
Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon.
07/03/14
20140187021
Method of healing defect at junction of semiconductor device using germanium
This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-ge layer on a substrate, performing ion implantation on the p-ge layer to form an n+ ge region or performing in-situ doping on the p-ge layer and then etching to form an n+ ge region or depositing an oxide film on the p-ge layer and performing patterning, etching and in-situ doping to form an n+ ge layer, forming a capping oxide film, performing annealing at 600˜700° c. For 1˜3 hr, and depositing an electrode, and in which annealing enables ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device..
07/03/14
20140187020
Method for low temperature layer transfer in the preparation of multilayer semicondutor devices
A method of preparing a monocrystalline donor substrate, the method comprising (a) implanting helium ions through the front surface of the monocrystalline donor substrate to an average depth d1 as measured from the front surface toward the central plane; (b) implanting hydrogen ions through the front surface of the monocrystalline donor substrate to an average depth d2 as measured from the front surface toward the central plane; and (c) annealing the monocrystalline donor substrate at a temperature sufficient to form a cleave plane in the monocrystalline donor substrate. The average depth d1 and the average depth d2 are within about 1000 angstroms..
07/03/14
20140186940
Nano-pcr: methods and devices for nucleic acid amplification and detection
Methods, devices, and compositions are described that provide for amplification of nucleic acid sequences without reliance upon temperature cycling, thus freeing the methods from conventional benchtop thermal cycling devices. Denaturation of double stranded nucleic acids, primer annealing, and precision control over primer extension by polymerase can be accomplished by applying stress to a nucleic acid.
07/03/14
20140186893
Linear amplification of short nucleic acids
The present teachings provide novel methods for amplifying short nucleic acids. In some embodiments, the present teachings provide novel methods for linearly amplifying a collection of micro rnas by using temperature cycling during a reverse transcription reaction.
07/03/14
20140186744
Nanostructured ptxmy catalyst for pemfc cells having a high activity and a moderate h2o2 production
A method of manufacturing a catalyst for a ptxmy-based pemfc, m being a transition metal, including the steps of: depositing ptxmy nanostructures on a support; annealing the nanostructures; depositing a ptxmy layer at the surface of the nanostructures thus formed; and chemically leaching metal m. It also aims at the catalyst obtained with this method..
07/03/14
20140186653
Turbine component having a low residual stress ferromagnetic damping coating
A turbine component having a low residual stress ferromagnetic damping coating. The ferromagnetic damping coating may include a ferromagnetic damping material applied in at least partially molten powder form, which may be directed at a surface of the substrate at an application velocity so that it causes partial plastic deformation of the surface while adhering to the surface of the substrate and solidifying in less than 3 seconds to create a ferromagnetic damping coating, resulting in a coated substrate.
07/03/14
20140186614
Electromagnetic steel sheet having insulating coating (as amended)
An electrical steel sheet with an insulation coating excellent in punchability, coating adhesion property and coating film property after annealing, even without containing any chromium compound in the insulation coating. The insulation coating is formed by applying a surface-treatment agent to at least one side of the electrical steel sheet and drying the surface-treatment agent.
07/03/14
20140183794
Methods for making oxidation resistant polymeric material
The present invention relates to methods for making oxidation resistant medical devices that comprise polymeric materials, for example, ultra-high molecular weight polyethylene (uhmwpe). The invention also provides methods of making antioxidant-doped medical implants, for example, doping of medical devices containing cross-linked uhmwpe with vitamin e by diffusion, post-doping annealing, and materials used therein..
07/03/14
20140183687
Integrated circuit having back gating, improved isolation and reduced well resistance and method to fabricate same
A structure includes a silicon substrate; at least two wells in the silicon substrate; and a deep trench isolation (dti) separating the two wells. The dti has a top portion and a bottom portion having a width that is larger than a width of the top portion.
07/03/14
20140183666
Flourine-stabilized interface
Methods for forming an electronic device having a fluorine-stabilized semiconductor substrate surface are disclosed. In an exemplary embodiment, a layer of a high-κ dielectric material is formed together with a layer containing fluorine on a semiconductor substrate.
07/03/14
20140183631
Low cost transistors
An integrated circuit containing an analog mos transistor has an implant mask for a well which blocks well dopants from two diluted regions at edges of the gate, but exposes a channel region to the well dopants. A thermal drive step diffuses the implanted well dopants across the two diluted regions to form a continuous well with lower doping densities in the two diluted regions.
07/03/14
20140183605
Semiconductor device and method of manufacturing the semiconductor device
A method of manufacturing a semiconductor device includes forming a plurality of fin structures on a substrate, the plurality of fin structures including a diffusion region, forming an epitaxial layer on the plurality of fin structures in an area of the diffusion region such that a height of the upper surface of the epitaxial layer over plurality of fin structures is substantially equal to the height of the upper surface of the epitaxial layer between the plurality of fin structures, and planarizing the upper surface of the epitaxial layer by one of etch back and reflow annealing.. .
07/03/14
20140183531
Method for producing p-type zno based compound semiconductor layer, method for producing zno based compound semiconductor element, and an n-type zno based compound semiconductor laminate structure
A method for producing a p-type zno based compound semiconductor layer including the steps of (a) supplying (i) zn, (ii) o, (iii) optional mg, and (iv) a group 11 element which is cu and/or ag to form a mgxzn1-xo (0≦x≦0.6) single crystal film doped with the group 11 element; (b) supplying at least one group 13 element selected from the group consisting of b, ga, al, and in on the mgxzn1-xo (0≦x≦0.6) single crystal film; (c) alternately carrying out the steps (a) and (b) to form a laminate structure; and (d) annealing the laminate structure to form a p-type mgxzn1-xo (0≦x≦0.6) layer co-doped with the group 11 element and the group 13 element.. .
07/03/14
20140182748
Method for manufacturing high strength galvanized steel sheet with excellent formability
A method of manufacturing a high-strength galvanized steel sheet includes hot-rolling a slab to form a steel sheet; during continuous annealing, heating the steel sheet to a temperature of 750° c. To 900° c.
06/26/14
20140180117
Preparation and application of a piezoelectric film for an ultrasound transducer
The present disclosure involves a method of fabricating an ultrasound transducer. A piezoelectric polymer is mixed into a solution containing a first chemical and a second chemical to form a viscous film.
06/26/14
20140179027
Adjusting intensity of laser beam during laser operation on a semiconductor device
Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device.
06/26/14
20140178824
Optimizing lithographic processes using laser annealing techniques
Approaches for utilizing laser annealing to optimize lithographic processes such as directed self assembly (dsa) are provided. Under a typical approach, a substrate (e.g., a wafer) will be subjected to a lithographic process (e.g., having a set of stages/phases, aspects, etc.) such as dsa.
06/26/14
20140178688
Bernal-stacked graphene layers and methods of making the same
In some embodiments, the present disclosure pertains to methods of controllably forming bernal-stacked graphene layers. In some embodiments, the methods comprise: (1) cleaning a surface of a catalyst; (2) annealing the surface of the catalyst; (3) applying a carbon source onto the cleaned and annealed surface of the catalyst in a reaction chamber; and (4) growing the bernal-stacked graphene layers on the surface of the catalyst in the reaction chamber, where the number of formed bernal-stacked graphene layers is controllable as a function of one or more growth parameters.
06/26/14
20140178513
Non ionic/electrolyte, liquid/gaseous, mechanically refined/nanoparticle dispersion building materials/high wear-heat resistant part brushes, windings, battery cells, brake pads, die cast molding, refrigeration, polarized/integrated optical, spectrometric processors, central processor unit processors, electronic storage media, analogous series/parallel circuit generators/transceivers, particulate matter pm carbonaceous-polyamide, crystalline silica, and cellulosic filament extraction/miners suit
The variable hydraulic press and distillation reservoir process scientific formula non ionic or electrolyte mechanically refined and nanoparticle dispersion preform slurry extrusion with or without ionic suspension preform slurry high wear-heat resistant parts electronic composite coils, windings, annealing, drawn, spun, coils, windings, wire, woven textile mesh, shielding, parts brushes, inductors, antinode couplers, electric rheostats, starters, motors, alternators, generators, ionic suspension enhanced composite coils, composite windings, spun wound coils and windings beryllium be4, magnesium mg12, copper cu29 and carbon nanofoam c6, electronic parts capacitors, ionic suspension circuit battery cells, electronic parts rheostats, resistors, transformers, transducers, rectifiers, power supplies, or heat sinks preform slurry high wear-heat resistant parts aerospace, automotive, and transportation brake calipers, rotors, pads, and bushings preform slurry non ionic or electrolyte mechanically refined and nanoparticle high wear-heat resistant parts precision casting molds 2.5 phase die cast molding building materials fine concrete, mortar, brick, and tiles.. .
06/26/14
20140175713
Method for operating a continuous annealing line for the processing of a rolled good
A method operates a continuous annealing line for the processing of a rolled good, in particular a metal strip. A property of the rolled good in relation to a point or a section of the rolled good is fed to a computer-aided model as an input variable.
06/26/14
20140175604
Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
Electrodes, which contain molybdenum dioxide (moo2) can be used in electronic components, such as memory or logic devices. The molybdenum-dioxide containing electrodes can also have little or no molybdenum element, together with a portion of molybdenum oxide, e.g., moox with x between 2 and 3.
06/26/14
20140175579
Method of producing nanopatterned articles, and articles produced thereby
A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film the method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media..
06/26/14
20140175548
High temperature gate replacement process
A method for fabricating an integrated circuit device is disclosed. An exemplary method comprises performing a gate replacement process to form a gate structure, wherein the gate replacement process includes an annealing process; after the annealing process, removing portions of a dielectric material layer to form a contact opening, wherein a portion of the substrate is exposed; forming a silicide feature on the exposed portion of the substrate through the contact opening; and filling the contact opening to form a contact to the exposed portion of the substrate..
06/26/14
20140175543
Conversion of thin transistor elements from silicon to silicon germanium
Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (si) to silicon germanium (sige). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising silicon, forming a cladding layer comprising germanium on the channel body, and annealing the channel body to cause the germanium to diffuse into the channel body.
06/26/14
20140175428
Perpendicular magnetoresistive elements
A perpendicular magnetoresistive element comprises a novel buffer layer having rocksalt crystal structure interfacing to a cofeb-based recording layer has (100) plane parallel to the substrate plane and with {110} lattice parameter being slightly larger than the bcc cofe lattice parameter along {100} direction, and crystallization process of amorphous cofeb material in the recording layer during thermal annealing leads to form bcc cofe grains having epitaxial growth with in-plane expansion and out-of-plane contraction. Accordingly, a perpendicular anisotropy, as well as a perpendicular magnetization, is induced in the recording layer.
06/26/14
20140175364
Radiation enhanced resistive switching layers
Provided are radiation enhanced resistive switching layers, resistive random access memory (reram) cells including these layers, as well as methods of forming these layers and cells. Radiation creates defects in resistive switching materials that allow forming and breaking conductive paths in these materials thereby improving their resistive switching characteristics.
06/26/14
20140175363
Forming nonvolatile memory elements by diffusing oxygen into electrodes
Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing.
06/26/14
20140174609
Method for manufacturing a high-strength steel sheet for a can
A method for manufacturing a high-strength steel sheet for a can, including (a) hot rolling a steel slab at a slab extraction temperature of 1200° c. Or more and a finish rolling temperature of (ar3 transformation temperature−30)° c.
06/19/14
20140170838
Apparatus and method for fabricating wafer
A method for fabricating a wafer according to the embodiment comprises the steps of depositing an epi layer in an epi deposition part; transferring the wafer to an annealing part connected to the epi deposition part; annealing the wafer in the annealing part; transferring the wafer to a cooling part connected to the annealing part; and cooling the wafer in the cooling part, wherein the depositing of the wafer, the annealing of the wafer and the cooling of the wafer are continuously performed. An apparatus for fabricating a wafer according to the embodiment comprises an epi deposition part; an annealing part connected to the epi deposition part; and a cooling part connected to the annealing part..
06/19/14
20140170813
Method for bonding semiconductor substrates and devices obtained thereof
A method is provided for bonding a first semiconductor substrate to a second semiconductor substrate using low temperature thermo-compression. The bonding method comprises the step of in-situ mechanically scrubbing the metal contact structure surfaces prior to thermo-compression bonding step, thereby planarizing the removing the oxides and/or contaminants from the metal contact structure surfaces.
06/19/14
20140170792
Forming thin film vertical light emitting diodes
A thin film vertical light emitting diode (vled) structure and process are described. Features of the design include the following: bonding multiple smaller diameter led wafers to a larger diameter carrier wafer, which reduces the per led fabrication cost; using thin film techniques to metalize the anode and cathode and using respective annealing steps prior to photolithography patterning of led structures; enabling the thin film process by semi-permanent bonding techniques which provide thermal and chemical stability, while allowing bond release at an opportune time by thermal, optical, or chemical means; using epitaxial substrate removal techniques to separate the entire led film from its growth substrate; and patterning various vertical led devices which can emit light from the n-type side (cathode), p-type side (anode), side wall, or a combination of the surfaces by using mirror layers and electrically conductive and optically transmissive layers..
06/19/14
20140170779
Coherent spin field effect transistor
A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° k to provide a few monolayer thick layer.
06/19/14
20140170480
Composite electrodes for lithium ion battery and method of making
A method for making a composite electrode for a lithium ion battery comprises the steps of: preparing a slurry containing particles of inorganic electrode material(s) suspended in a solvent; preheating a porous metallic substrate; loading the metallic substrate with the slurry; baking the loaded substrate at a first temperature; curing the baked substrate at a second temperature sufficient to form a desired nanocrystalline material within the pores of the substrate; calendaring the cured composite to reduce internal porosity; and, annealing the calendared composite at a third temperature to produce a self-supporting multiphase electrode. Because of the calendaring step, the resulting electrode is self-supporting, has improved current collecting properties, and improved cycling lifetime.
06/19/14
20140167327
Surface annealing of components for substrate processing chambers
A method of fabricating a processing chamber component comprises forming a processing chamber component having a structural body with surface regions having microcracks, and directing a laser beam onto the microcracks of the surface regions of the structural body for a sufficient time to heal and close off the microcracks by themselves.. .
06/19/14
20140167219
Thick on-chip high-performance wiring structures
Methods for fabricating a back-end-of-line (beol) wiring structure, beol wiring structures, and design structures for a beol wiring structure. The beol wiring may be fabricated by forming a first wire in a dielectric layer and annealing the first wire in an oxygen-free atmosphere.
06/19/14
20140166632
Dual-loop control for laser annealing of semiconductor wafers
Systems and methods for performing semiconductor laser annealing using dual loop control are disclosed. The first control loop operates at a first frequency and controls the output of the laser and controls the 1/f laser noise.
06/19/14
20140166159
La(fe,si)13-based magnetic refrigeration material prepared from industrial-pure mischmetal as the raw material and preparation and use thereof
The invention provides a la(fe,si)13-based magnetic refrigeration material prepared from industrial-pure mischmetal as the raw material, wherein the industrial-pure mischmetal is impurity-containing and naturally proportionated la—ce—pr—nd mischmetal or lace alloy which, as the intermediate product during rare earth extraction, is extracted from light rare earth ore. The invention further provides the preparation method and use of the material, wherein the preparation method comprises the steps of smelting and annealing industrial-pure mischmetal as the raw material to prepare the la(fe,si)13-based magnetic refrigeration material.
06/19/14
20140165654
Bulk annealing of glass sheets
Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example.
06/12/14
20140164600
Determining a system configuration for performing a collective operation on a parallel computer
Determining a system configuration for performing a collective operation on a parallel computer that includes a plurality of compute nodes, the compute nodes coupled for data communications over a data communications network, including: selecting a system configuration on the parallel computer for executing the collective operation; executing the collective operation on the selected system configuration on the parallel computer; determining performance metrics associated with executing the collective operation on the selected system configuration on the parallel computer; selecting, using a simulated annealing algorithm, a plurality of test system configurations on the parallel computer for executing the collective operation, wherein the simulated annealing algorithm specifies a similarity threshold between a plurality of system configurations; executing, the collective operation on each of the test system configurations; and determining performance metrics associated with executing the collective operation on each of the test system configurations.. .
06/12/14
20140164592
Determining a system configuration for performing a collective operation on a parallel computer
Determining a system configuration for performing a collective operation on a parallel computer that includes a plurality of compute nodes, the compute nodes coupled for data communications over a data communications network, including: selecting a system configuration on the parallel computer for executing the collective operation; executing the collective operation on the selected system configuration on the parallel computer; determining performance metrics associated with executing the collective operation on the selected system configuration on the parallel computer; selecting, using a simulated annealing algorithm, a plurality of test system configurations on the parallel computer for executing the collective operation, wherein the simulated annealing algorithm specifies a similarity threshold between a plurality of system configurations; executing, the collective operation on each of the test system configurations; and determining performance metrics associated with executing the collective operation on each of the test system configurations.. .
06/12/14
20140163215
Annealing control primer and its uses
The present invention relates to an annealing control primer for improving annealing specificity in nucleic acid amplification and its applications to all fields of nucleic acid amplification-involved technology. The present primer comprises (a) a 3′-end portion having a hybridizing nucleotide sequence substantially complementary to a site on a template nucleic acid to hybridize therewith; (b) a 5′-end portion having a pre-selected arbitrary nucleotide sequence; and (c) a regulator portion positioned between said 3′-end portion and said 5′-end portion comprising at least one universal base or non-discriminatory base analog, whereby said regulator portion is capable of regulating an annealing portion of said primer in association with annealing temperature..
06/12/14
20140162400
Alkali metal-doped solution-processed metal chalcogenides
A method is provided for forming an alkali metal-doped solution-processed metal chalcogenide. A first solution is formed that includes a first material group of metal salts, metal complexes, or combinations thereof, dissolved in a solvent.
06/12/14
20140162381
Laser annealing device and method
A laser annealing device for compensating wafer heat maps and its method are disclosed. A laser annealing device comprises a pump laser source array including of a plurality of pump laser sources for irradiating a tunable mask, each pump laser source emitting pump laser, an annealing laser source for emitting annealing laser and irradiating the tunable mask, and a tunable mask for transmitting at least part of the annealing laser after being irradiated by the pump laser..


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Annealing topics: Anisotropy, Electronic Device, Semiconductor, Differentiation, Vitrification, Led Structure, Defect Density, Epitaxial Growth, Regenerative

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