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This page is updated frequently with new Annealing-related patent applications. Subscribe to the Annealing RSS feed to automatically get the update: related Annealing RSS feeds. RSS updates for this page: Annealing RSS RSS


Stacked package, method of fabricating stacked package, and method of mounting stacked package fabricated by the method

Method for producing b-ga203 substrate and method for producing crystal laminate structure

Ohmic contacts for semiconductor structures

Date/App# patent app List of recent Annealing-related patents
08/21/14
20140235052
 Methods for fabricating semiconductor devices having through electrodes patent thumbnailnew patent Methods for fabricating semiconductor devices having through electrodes
Methods for fabricating semiconductor devices having through electrodes are provided. The method may comprise forming a via hole which opens towards an upper surface of a substrate and disconnects with a lower surface of the substrate; forming a via isolation layer which extends along an inner surface of the via hole and covers the upper surface of the substrate; forming a seed layer on the via isolation layer which extends along the via isolation layer; annealing the seed layer in-situ after forming the seed layer; forming a conductive layer, filling the via hole, by an electroplating using the seed layer; and planarizing the upper surface of the substrate to form a through electrode surrounded by the via isolation layer in the via hole..
08/21/14
20140235048
 Method for fabricating semiconductor device patent thumbnailnew patent Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an uppermost surface of the nitride semiconductor layer and the ohmic electrodes by annealing the nitride semiconductor layer, removing the ohmic electrodes from at least one of the source region and the drain region. After forming the low-resistance layer, and forming at least one of a source electrode and a drain electrode on the low-resistance layer, the at least one of a source electrode and a drain electrode having an edge, a distance between the edge and a gate electrode is longer than a distance between an edge of the low-resistance layer and the gate electrode..
08/21/14
20140235014
 Method for manufacturing a metal-insulator-semiconductor (mis) structure for an electroluminescent diode patent thumbnailnew patent Method for manufacturing a metal-insulator-semiconductor (mis) structure for an electroluminescent diode
A method for manufacturing a structure comprising a substrate made of at least one n-type semiconducting metal oxide is disclosed. In one aspect, the method comprises providing a substrate made of at least one n-type semiconducting metal oxide selected from the group consisting of: zno, cdo, mgo, znmgo, and zncdo, wherein the doping rate of which is less than or equal to 1018/cm3.
08/21/14
20140234996
 Ohmic contacts for semiconductor structures patent thumbnailnew patent Ohmic contacts for semiconductor structures
A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a tialxny material at least partially contiguous with the semiconductor structure.
08/21/14
20140233791
 Synthetic aperture radar map aperture annealing and interpolation patent thumbnailnew patent Synthetic aperture radar map aperture annealing and interpolation
A method for repairing, bridging, or extrapolating an existing aperture to improve image interpretability in synthetic aperture radar images.. .
08/21/14
20140232005
 Stacked package, method of fabricating stacked package, and method of mounting stacked package fabricated by the method patent thumbnailnew patent Stacked package, method of fabricating stacked package, and method of mounting stacked package fabricated by the method
Provided are a stacked package, a method of fabricating a stacked package, and a method of mounting the stacked package fabricated by the same. The method of fabricating a stacked package includes providing an upper semiconductor package including an upper package substrate, upper semiconductor chips formed on a top surface of the upper package substrate, and first solders formed on a bottom surface of the upper package substrate and having a first melting temperature, providing a lower semiconductor package including a lower package substrate, lower semiconductor chips formed on a top surface of the lower package substrate, and solder paste nodes formed on the top surface of the lower package substrate and having a second melting temperature lower than the first melting temperature, and forming inter-package bonding units by attaching respective first solders and solder paste nodes to each other by performing annealing at a temperature higher than the second melting temperature and lower than the first melting temperature..
08/21/14
20140231383
 Method for making a perpendicular magnetic recording disk with template layer formed of nanoparticles embedded in a polymer material patent thumbnailnew patent Method for making a perpendicular magnetic recording disk with template layer formed of nanoparticles embedded in a polymer material
A method for making a perpendicular magnetic recording disk includes forming a template layer below a ru or ru alloy underlayer, with a granular co alloy recording layer formed on the underlayer. The template layer is formed by depositing a solution of a polymer with a functional end group and nanoparticles, allowing the solution to dry, annealing the polymer layer to thereby form a polymer layer with embedded spaced-apart nanoparticles, and then etching the polymer layer to a depth sufficient to partially expose the nanoparticles so they protrude above the surface of the polymer layer.
08/21/14
20140230966
 Method for producing a grain-oriented electrical steel strip or sheet intended for electrotechnical applications patent thumbnailnew patent Method for producing a grain-oriented electrical steel strip or sheet intended for electrotechnical applications
A method for producing a grain-oriented electrical steel strip or sheet, in which the slab temperature of a thin slab consisting of a steel having (% wt.) si: 2-6.5%, c: 0.02-0.15%, s: 0.01-0.1%, cu: 0.1-0.5%, wherein the cu to s content ratio is % cu/% s>4, mn: up to 0.1%, wherein the mn to s content ratio is % mn/% s<2.5, and optional contents of n, al, ni, cr, mo, sn, v, nb, is homogenised to 1000-1200° c. The thin slab is hot rolled into a hot strip having a thickness of 0.5-4.0 mm at an initial hot-rolling temperature of <=1030° c.
08/21/14
20140230723
 Method for producing b-ga203 substrate and method for producing crystal laminate structure patent thumbnailnew patent Method for producing b-ga203 substrate and method for producing crystal laminate structure
Provided are: a method for producing a β-ga2o3 substrate of which changes in donor concentration in a reducing atmosphere or an inert gas atmosphere are suppressed; and a method for producing a crystal laminate structure that can epitaxially grow a high-quality crystal film having low variability of quality in a reducing atmosphere or an inert gas atmosphere. The method for producing a β-ga2o3 substrate includes a step for cutting out a β-ga2o3 substrate from a β-ga2o3 crystal containing a group iv element; annealing processing in an atmosphere containing a reducing atmosphere and/or an inert gas atmosphere is performed on the β-ga2o3 crystal before cutting out the β-ga2o3 substrate, or on the cut-out β-ga2o3 substrate..
08/14/14
20140227803
 Method for making a current-perpendicular-to-the-plane (cpp) magnetoresistive sensor having a low-coercivity reference layer patent thumbnailMethod for making a current-perpendicular-to-the-plane (cpp) magnetoresistive sensor having a low-coercivity reference layer
A method for making a current-perpendicular-to-the-plane (cpp) magnetoresistive (mr) sensor that has a reference layer with low coercivity includes first depositing, within a vacuum chamber, a seed layer and an antiferromagnetic layer on a substrate without the application of heat. The substrate with deposited layers is then heated to between 200-600° c.
08/14/14
20140227558
Catheter wire and method of manufacturing the same
A catheter wire includes a wire core including a semi-rigid stainless steel, and a conductor layer covering an outer periphery of the wire core. A method of manufacturing a catheter wire includes drawing a stainless steel in an axial direction so as to form a wire core with a predetermined diameter, annealing the drawn stainless steel so as to change the stainless steel into a semi-rigid stainless steel, and forming a conductor layer on an outer periphery of the semi-rigid stainless steel..
08/14/14
20140227325
Lignin-derived porous carbon composition, methods of preparation, and use thereof
A method of fabricating a porous carbon composition, the method comprising subjecting a precursor composition to a thermal annealing step followed by a carbonization step, the precursor composition comprising: (i) a templating component comprised of a block copolymer and (ii) a lignin component, wherein said carbonization step comprises heating the precursor composition at a carbonizing temperature for sufficient time to convert the precursor composition to a carbon material comprising a carbon structure in which is included mesopores having a diameter within a range of 2 to 50 nm, wherein said porous carbon composition possesses a mesopore volume of at least 50% with respect to a total of mesopore and micropore volumes. Also described are the resulting mesoporous carbon composition, a composite of the mesoporous carbon material and at least one pharmaceutical agent, and the administration of the carbon-pharmaceutical dosage form to a subject..
08/14/14
20140227162
Large-area carbon nanomesh from polymer and method of preparing the same
The present disclosure relates to a polymer-based large-area carbon nanomesh and a method for preparing same. More particularly, the present disclosure provides a method for preparing a carbon nanomesh, including: preparing a polymer nanofilm by coating a solution of a block copolymer or a polymer mixture thereof on a substrate; stabilizing the polymer nanofilm by annealing such that the polymer nanofilm is phase-separated, a pore-forming polymer is removed and, at the same time, a nanomesh-forming polymer forms a stabilized porous polymer nanomesh; and carbonizing the stabilized porous polymer nanomesh by annealing at high temperature to prepare a carbon nanomesh.
08/14/14
20140225316
Ferrite magnetic powder for bond magnet and manufacturing method of the same, and bond magnet
To provide ferrite magnetic powders for bond magnet capable of surely suppressing residual hexavalent chrome, being an environmental load substance, having no adverse influence on the magnetic characteristics, which is an obstacle in use, and without damaging productivity and at a low cost. The method includes the steps of obtaining sintered powders by sintering raw material powders; wet-pulverizing the sintered powders; wet-cleaning the sintered powders; and annealing the cleaned sintered powders, wherein in the step of the wet-pulverization and in the step of wet-cleaning, generation of the hexavalent chrome, being an environmental load substance, is suppressed by performing the pulverization and cleaning while maintaining ph of a dispersion solvent at 8.5 or less, at the time of pulverization and cleaning..
08/14/14
20140225231
Modulating bow of thin wafers
Apparatus and methods modulate the bowing of thin wafers. According to a method, a wafer is formed of semiconductor material.
08/14/14
20140225115
Tensile polycrystalline silicon film having stable resistivity and method of fabricating thereof
Tensile polycrystalline silicon films having improved resistivity and less variability or more stable resistivity in finished semiconductors are provided. The methods of manufacturing such polycrystalline silicon films include application of protective film or film layer prior to annealing the semiconductor.
08/14/14
20140224788
Apparatus and methods for cartridge case annealing
In one embodiment, a case transfer apparatus includes a base, a feeding device having a first end tapering to a second end that is coupled to the base, a motor disposed on the base, a rotatable feed wheel assembly disposed on the base and coupled to the motor, the rotatable feed wheel assembly adapted to receive at least one case via gravitational force from a feeding device, and a roller plate coupled to the motor and disposed adjacent the rotatable feed wheel assembly within a case receiving region where the at least one case is rotated and heated.. .
08/14/14
20140224387
Method of annealing copper wire for interconnector
A method of annealing a copper wire for an interconnector includes heating a copper wire by a direct resistance heating or by an induction heating, a heating temperature of the heating being in a range of 650° c. To 1020° c., and a heating time of the heating being in a range of 0.3 seconds to 5 seconds..
08/14/14
20140224323
Solar cell sheet and heat treatment process thereof
Provided are a solar cell sheet and a heat treatment process thereof the heat treatment process includes: a) sifting from solar cell sheets after printed and sintered cell sheets with conversion efficiency lower than 18% and filling factor thereof higher than 70%; h) performing low temperature annealing on the sifted cell sheets; c) sifting from the cell sheets after low temperature annealing cell sheets with lowered filling factor; d) re-sintering the sifted cell sheets; and e) sifting from the re-sintered cell sheets cell sheets with conversion efficiency lower than 18% and returning back to b) until most or all of the sifted meet demands. The low temperature annealing and re-sintering processes proceed cyclically, low temperature annealing can repair the defects in the substrate material, and the re-sintering process can repair the defects generated from low temperature annealing, and the two processes cooperate with each other and sifting can be performed repeatedly, greatly reducing the number of low efficient sheets and improving economic benefits..
08/07/14
20140223224
Systems and methods for error correction in quantum computation
The effects of decoherence and/or noise in adiabatic quantum computation and quantum annealing are reduced by implementing replica coding schemes. Multiple instances of the same problem are mapped to respective subsets of the qubits and coupling devices of a quantum processor.
08/07/14
20140221195
Vertically aligned mesoporous thin film, method of manufacturing the same, and catalytic application thereof
This invention relates to a vertically aligned mesoporous silicate film with site-selective metal deposition from a single polymeric precursor and to diverse catalytic applications thereof. There is an innovative approach of a single precursor to manufacture a vertically aligned mesoporous silicate thin film having high thermal and chemical resistance on a large-area silicon wafer (2 cm×3 cm).
08/07/14
20140220777
Processing system for combined metal deposition and reflow anneal for forming interconnect structures
An interconnect conductive metal used in forming an interconnect structure can be formed using a method in which deposition of a metal liner and a reflow anneal are performed in a same multi-chambered processing system without exposing the structure to air between the steps of deposition and reflow annealing. In the disclosure, an interconnect dielectric material including an opening is placed within the multi-chambered processing system and then the interconnect dielectric material is transferred, under vacuum, to a deposition chamber in which the metal liner is deposited.
08/07/14
20140220771
Worm memory device and process of manufacturing the same
A process of manufacturing a write-once-read-many-times memory, at least includes the following steps: (a) providing a substrate as a lower electrode; (b) depositing a first oxide layer on the substrate; (c) depositing at least one or more silicon/germanium (si/ge) layers on the first oxide layer; (d) depositing a second oxide layer on the at least one or more si/ge layers; (e) carrying out a rapid thermal annealing to form sige nanocrystals embedded in the first dioxide layer and the second oxide layer; and (f) depositing a conductive layer on the second oxide layer as an upper electrode. The sige nanocrystals embedded in the al2o3 bilayer as the active layer of the worm memory offers high thermal stability, so that low operating voltage, fast writing, ideal reading durability, persistence at high temperature, and the highly reliable memory performance for effectively reading data at high temperature can be achieved..
08/07/14
20140220757
Pinch-off control of gate edge dislocation
A method of manufacturing a semiconductor device includes providing a substrate having a gate stack, and performing a pre-amorphous implantation (pai) process to form an amorphized region on the substrate. The method also includes performing an annealing process to recrystallize the amorphized region after the stress film is formed.
08/07/14
20140220751
Methods for forming semiconductor regions in trenches
A method includes recessing a portion of a semiconductor substrate between opposite isolation regions to form a recess. After the step of recessing, the portion of the semiconductor substrate includes a top surface.
08/07/14
20140220734
Method for controlling concentration of donor in ga2o3-based single crystal
A method for controlling the concentration of a donor in a ga2o3-based single crystal includes: a step in which a group iv element is implanted as a donor impurity in a ga2o3-based single crystal by ion implantation process to form, in the ga2o3-based single crystal, a donor impurity implantation region that has a higher concentration of the group iv element than the region in which the group iv element has not been implanted; and a step in which annealing at 800 c or higher is conducted to activate the group iv element present in the donor impurity implantation region and thereby form a high-donor-concentration region. Thus, the donor concentration in the ga2o3-based single crystal is controlled..
08/07/14
20140220448
Production of nanostructured li4ti5o12 with superior high rate performance
A process of preparing nanostructured lithium titanate particles. The process contains the steps of providing a solvent containing a soft-template compound, a lithium ion-containing compound, and a titanium ion-containing compound; removing the solvent to obtain a lithium titanate precursor; and calcining the precursor followed by milling and annealing.
08/07/14
20140220382
High strength galvanized steel sheet excellent in terms of coating adhesiveness and method for manufacturing the same
A high strength galvanized steel sheet excellent in coating adhesiveness is made from a base material that is a high strength steel sheet containing si, mn, and cr. A method includes performing an oxidation treatment on steel containing si, mn, and cr in an oxidation furnace under the condition that a selected exit temperature t, reduction annealing and a galvanizing treatment, or optionally, further an alloying treatment under conditions that heating is performed at a temperature of 460° c.
08/07/14
20140220370
Tube for the end consumer with minimum interior and exterior oxidation, with grains that may be selectable in size and order; and production process of tubes
The invention set forth in this specification considers implementing a production process through a productive line of a continuous vertical casting machine that produces a direct pre-tube from the melt, which we shall call “new pre-tube”. Later, as a second step, that new pre-tube passes through two simultaneous, synchronized wiredrawing machines and finally, through an induction annealing furnace.
08/07/14
20140217541
Back-side illuminated image sensor with a junction insulation
A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.. .
08/07/14
20140217531
Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications
A mtj for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (pma) in an overlying laminated layer with a (co/x)n or (cox)n composition where n is from 2 to 30, x is one of v, rh, ir, os, ru, au, cr, mo, cu, ti, re, mg, or si, and cox is a disordered alloy. The seed layer is preferably nicr, nifecr, hf, or a composite thereof with a thickness from 10 to 100 angstroms.
08/07/14
20140217530
Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications
A mtj for a spintronic device that is a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (pma) in an overlying laminated layer with a (co/x)n or (cox)n composition where n is from 2 to 30, x is one of v, rh, ir, os, ru, au, cr, mo, cu, ti, re, mg, or si, and cox is a disordered alloy. The seed layer is preferably nicr, nifecr, hf, or a composite thereof with a thickness from 10 to 100 angstroms.
08/07/14
20140217529
Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications
A mtj for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (pma) in an overlying laminated layer with a (co/x)n or (cox)n composition where n is from 2 to 30, x is one of v, rh, ir, os, ru, au, cr, mo, cu, ti, re, mg, or si, and cox is a disordered alloy. The seed layer is preferably nicr, nifecr, hf, or a composite thereof with a thickness from 10 to 100 angstroms.
08/07/14
20140216542
Semiconductor material surface treatment with laser
A photovoltaic device and its method of manufacture are disclosed. The device is formed by forming a window layer over a substrate, forming an absorber layer over the window layer, and annealing the absorber layer using a laser beam to remove contaminants from the surface of the absorber layer and/or to reduce the thickness of the absorber layer..
08/07/14
20140216342
Processing system for combined metal deposition and reflow anneal for forming interconnect structures
An interconnect conductive metal used in forming an interconnect structure can be formed using a method in which deposition of a metal liner and a reflow anneal are performed in a same multi-chambered processing system without exposing the structure to air between the steps of deposition and reflow annealing. In the disclosure, an interconnect dielectric material including an opening is placed within the multi-chambered processing system and then the interconnect dielectric material is transferred, under vacuum, to a deposition chamber in which the metal liner is deposited.
08/07/14
20140216124
Method for producing a motor vehicle axle component
A method for producing a motor vehicle axle component includes the method steps of providing a metal strip made of a hardenable steel material, hot rolling the metal strip and subsequent cold rolling with more than 4% rolling reduction degree, annealing at 600 to 800° c., in particular at 650 to 750° c. For a time period between 10 and 20 hours, in particular 13 to 17 hours, cutting the heat treated metal strip to cut sheet metals, forming the metal cut into a motor vehicle axle component, austenizing and quenching the motor vehicle axle component, wherein the motor vehicle axle component has at least in a surface region a grain size characteristic value according to astm-e 112 of greater than 9..
07/31/14
20140213071
Laser annealing method and device
A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.. .
07/31/14
20140212688
High grade titanium alloy sheet and method of making same
A sheet of titanium alloy that is less than 0.015″ thick has adequate plasticity for subsequent forming into at least a part of a medical device that is mr-conditional. A method for making the titanium alloy sheet includes cold rolling a titanium alloy to form a sheet having an average thickness less than or equal to 0.015″, cutting the sheet to length, and vacuum annealing the sheet in a final step, wherein the sheet following vacuum annealing has adequate plasticity for subsequent forming into at least a part of a medical device that is mr-conditional.
07/31/14
20140212671
Direct growth of graphene by molecular beam epitaxy for the formation of graphene heterostructures
Growth of single- and few-layer macroscopically continuous graphene films on co3o4(111) by molecular beam epitaxy (mbe) has been characterized using low energy electron diffraction (leed), auger electron spectroscopy (aes) and x-ray photoelectron spectroscopy (xps). Mbe of co on sapphire(0001) at 750 k followed by annealing in uhv (1000 k) results in ˜3 monolayers (ml) of co3o4(111) due to o segregation from the bulk.
07/31/14
20140210092
Refractory metal nitride capped contact
According to one disclosed embodiment, an electrical contact for use on a semiconductor device comprises an electrode stack including a plurality of metal layers and a capping layer formed over the plurality of metal layers. The capping layer comprises a refractory metal nitride.
07/31/14
20140210051
Method for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications
A method and structures are provided for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications. A deep oxygen implant is provided in a selected region of substrate.
07/31/14
20140209974
Double stepped semiconductor substrate
A method for forming a double step surface on a semiconductor substrate includes, with an etching process used in a metal-organic chemical vapor deposition (mocvd) process, forming a rough surface on a region of a semiconductor substrate. The method further includes, with an annealing process used in the mocvd process, forming double stepped surface on the region of the semiconductor substrate..
07/31/14
20140209801
Method for using a photodetector having a bandwidth tuned honeycomb cell photodiode structure
A photodetector with a bandwidth-tuned cell structure is provided. The photodetector is fabricated from a semiconductor substrate that is heavily doped with a first dopant.
07/31/14
20140209583
Managing thermal budget in annealing of substrates
A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber.
07/31/14
20140209578
Stage unit and laser annealing apparatus including the same
A stage unit may include a frame, a first guide device, a stage, a second guide device and a pad. The first guide device may be arranged over an upper surface of the frame and configured to guide the stage in a first direction.
07/31/14
20140209219
Shape setting a shape memory alloy dental arch
Methods are provided for shape-setting hyperelastic, single-crystal shape memory alloy (sma) material while preserving the hyperelastic properties of the material. A wire or rod of a single crystal shape memory alloy material is heated to an annealing temperature (ta).
07/31/14
20140209215
Copper-based alloy wire and methods for manufaturing the same
A copper-based alloy wire made of a material selected from the group consisting of a copper-gold alloy, a copper-palladium alloy and a copper-gold-palladium alloy is provided. The alloy wire has a polycrystalline structure of a face-centered cubic lattice and consists of a plurality of equi-axial grains.
07/24/14
20140206190
Silicide formation in high-aspect ratio structures
Embodiments of the present invention include methods of forming a silicide layer on a semiconductor substrate. In an exemplary embodiment, a metal layer may first be deposited above a semiconductor substrate using a chemical vapor deposition process with a metal amidinate precursor and then the semiconductor substrate may be annealed, causing the semiconductor substrate to react with the metal layer forming a metal-rich silicide layer on the semiconductor substrate.
07/24/14
20140206188
Method of forming a metal silicide layer
A method for forming a metal silicide layer is disclosed. The method includes the steps of: forming a first metal layer with a thickness less than 10 nm on a silicon substrate; forming a second metal layer with a thickness more than 10 nm on the first metal layer; annealing the metal layers and the silicon substrate, so that a part of the second metal layer penetrates through the first metal layer, and both the part of the second metal layer penetrating through the first metal layer and a part of the first metal layer react with the silicon substrate to form the metal silicide layer, while the remaining part of the first and second metal layers form a third metal layer; and removing the third metal layer, so that the metal silicide layer can be formed in the semiconductor substrate..
07/24/14
20140206115
Optoelectronic semiconductor device and the manufacturing method thereof
The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 volt.. .
07/24/14
20140205485
Soft magnetic powders and compacts
A water atomized fe powder for a magnetic compact reduced in deformation resistance during molding and annealing temperature for removing strains is provided. A compact having improved magnetic properties is also provided.
07/24/14
20140203482
Apparatus and method for the treatment of a flat steel product, taking place in throughput
An apparatus and a method for the treatment of a flat steel product, taking place in throughput. The apparatus includes an indirectly heated annealing furnace chamber, a conveyor device for continuously conveying the flat steel product over a conveyor path leading from an entry to an exit of the annealing furnace chamber, and nozzle arrangements for feeding atmosphere gas, which is reactive in relation to the flat steel product, into the annealing furnace chamber.
07/24/14
20140203337
Method of forming gate dielectric layer and method of fabricating semiconductor device
A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process.. .
07/24/14
20140202601
Forged tial components, and method for producing same
The present invention relates to a method for producing forged components of a tial alloy, in particular turbine blades, wherein the components are forged and undergo a two-stage heat treatment after the forging process, the first stage of the heat treatment comprising a recrystallization annealing process for 50 to 100 minutes at a temperature below the γ/α transition temperature, and the second stage of the heat treatment comprising a stabilization annealing process in the temperature range of from 800° c. To 950° c.
07/24/14
20140202599
Method for producing oriented magnetic steel sheet
In a method of producing a grain-oriented electrical steel sheet by subjecting a coil for grain-oriented electrical steel sheet after cold rolling to a primary recrystallization annealing, applying an annealing separator thereon, and conducting final annealing, rapid heating is conducted at a rate of not less than 80° c./sec from 500° c. To 700° c.
07/24/14
20140202213
Laser annealing apparatus
A laser annealing apparatus includes a lens unit configured to transmit a laser beam to be irradiated onto an irradiation target; a lens unit housing accommodating the lens unit and having an opening configured to allow the laser beam to pass through the opening; a blocking plate configured to block at least a portion of the laser beam reflected by the irradiation target after being transmitted through the lens unit to the irradiation target; and a cooling unit between the blocking plate and the lens unit housing.. .
07/17/14
20140200425
Encapsulated electronics
An eye-mountable device includes an electrochemical sensor embedded in a polymeric material configured for mounting to a surface of an eye. The electrochemical sensor includes a working electrode and a reference electrode that reacts with an analyte to generate a sensor measurement related to a concentration of the analyte in a fluid to which the eye-mountable device is exposed.
07/17/14
20140200424
Encapsulated electronics in an eye-mountable device
An eye-mountable device includes an electrochemical sensor embedded in a polymeric material configured for mounting to a surface of an eye. The electrochemical sensor includes a working electrode and a reference electrode that reacts with an analyte to generate a sensor measurement related to a concentration of the analyte in a fluid to which the eye-mountable device is exposed.
07/17/14
20140199822
Methods of forming semiconductor device structures including an insulative material on a semiconductive material, and related semiconductor device structures and semiconductor devices
A method of forming a semiconductor device structure. The method comprises forming an insulative material on a semiconductive material, and microwave annealing at least an interface between the insulative material and the semiconductive material.
07/17/14
20140197416
Memories and methods of forming thin-film transistors using hydrogen plasma doping
Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon.
07/17/14
20140197037
Treatment method of electrodeposited copper for wafer-level-packaging process flow
A method of treating a copper containing structure on a substrate is disclosed. The method includes electrodepositing the copper containing structure on a substrate, annealing the copper containing structure, and forming an interface between a pad of the copper containing structure and a solder structure after anneal.
07/10/14
20140194548
Sequentially cross-linked polyethylene
A method of producing an improved polyethylene, especially an ultra-high molecular weight polyethylene utilizes a sequential irradiation and annealing process to form a highly cross-linked polyethylene material. The use of sequential irradiation followed by sequential annealing after each irradiation allows each dose of irradiation in the series of doses to be relatively low while achieving a total dose which is sufficiently high to cross-link the material.
07/10/14
20140194316
Enhanced multiplex fish
Subject of the present invention is a combination of nucleic acid molecules capable of hybridizing with a target nucleic acid sequence. In order to overcome problems with the reproducibility of fish assays and to decrease assay time, hairpin probes are used in combination with helper probes annealing adjacent to the target site of the hairpin probe..
07/10/14
20140194271
Tuning tzc by the annealing of ultra low expansion glass
The disclosure describes a silica-titania glass having a selected titania content in the range of 5-20 wt % that has zero crossover temperature (tzc) associated with the selected titania content withing this range, and the tzc is adjustable by ±10° c. Or less.
07/10/14
20140193964
Method of manufacturing semiconductor device
The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps.
07/10/14
20140193943
Method for fabricating cu-in-ga-se film solar cell
A method for fabricating a cu—in—ga—se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a cu—in—ga—se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an in2se3 or zns buffer layer on the cu—in—ga—se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the in2se3 or zns buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer..
07/10/14
20140193823
Primer set and a method for identification of meat species
The invention discloses a primer set for identification of meat species. The primer set comprises a pair of outer primers used to amplify a sense strand of dna fragment of mitochondrial cytochrome b between positions 51 and 507.
07/10/14
20140193606
Sapphire component with residual compressive stress
A method comprises shaping an aluminum oxide ceramic material into a component for an electronic device. The component has first and second major surfaces.
07/10/14
20140193580
Method for making patterns on the surface of a substrate using block copolymers
A method for making patterns on the surface of a substrate by graphoepitaxy, includes depositing a layer of resin on the surface of the substrate; making patterns in the resin on the surface of a substrate; curing the patterns in the resin by producing a layer of amorphous carbon on the surface of the patterns in the resin; depositing a layer of statistical copolymer after curing the patterns in the resin; grafting the layer of statistical copolymer onto the patterns in the resin by annealing; and depositing a layer of a block copolymer into the spaces defined by the patterns in the resin after curing the patterns and the grafting of the layer of statistical copolymer.. .
07/10/14
20140191618
Poling treatment method, plasma poling device, piezoelectric body and manufacturing method thereof, film forming device and etching device, and lamp annealing device
A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled..
07/10/14
20140190403
Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave
A method of growing high-quality, group-iii nitride, bulk single crystals. The group iii-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group iii-nitride polycrystals or group-iii metal having a grain size of at least 10 microns or more and a seed crystal that is a group-iii nitride single crystal.


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Annealing topics: Anisotropy, Electronic Device, Semiconductor, Differentiation, Vitrification, Led Structure, Defect Density, Epitaxial Growth, Regenerative

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