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Magnetoresistive element

Magnetoresistive element

Magnetoresistive element

Liquid crystal display device and method for producing liquid crystal display device

Date/App# patent app List of recent Anisotropy-related patents
10/02/14
20140293745
 Methods and systems for performing azimuthal simultaneous elastic inversion patent thumbnailMethods and systems for performing azimuthal simultaneous elastic inversion
An improved method for analyzing seismic data to obtain elastic attributes is disclosed. In one embodiment, a reflectivity series is determined for at least one seismic trace of seismic data obtained for a subterranean formation, where the reflectivity series includes anisotropy properties of a formation.
09/25/14
20140287211
 Uniaxially stretched multi-layer laminate film patent thumbnailUniaxially stretched multi-layer laminate film
A uniaxially stretched multi-layer laminate film includes 251 or more layers in which a first layer and a second layer are alternately laminated, wherein the first layer is composed of a polyester containing a 2,6-naphthalene dicarboxylic acid component; the second layer is composed of a thermoplastic resin having an average refractive index of 1.60 or more and not more than 1.65 and having negative optical anisotropy or isotropy; an s polarization component has an average reflectance of 90% or more relative to the incident polarized light at an angle of incidence of 0 degree and 50 degrees, respectively; and a p polarization component has an average reflectance of not more than 15% relative to the incident polarized light at an angle of incidence of 0 degree and an average reflectance of 20% or more relative to the incident polarized light at an angle of incidence of 50 degrees.. .
09/25/14
20140286084
 Magnetoresistive element patent thumbnailMagnetoresistive element
According to one embodiment, a magnetoresistive element comprises a storage layer having perpendicular magnetic anisotropy with respect to a film plane and having a variable direction of magnetization, a reference layer having perpendicular magnetic anisotropy with respect to the film plane and having an invariable direction of magnetization, a tunnel barrier layer formed between the storage layer and the reference layer and containing o, and an underlayer formed on a side of the storage layer opposite to the tunnel barrier layer. The reference layer comprises a first reference layer formed on the tunnel barrier layer side and a second reference layer formed opposite the tunnel barrier layer.
09/25/14
20140285762
 Liquid crystal display device and method for producing liquid crystal display device patent thumbnailLiquid crystal display device and method for producing liquid crystal display device
The present invention provides a liquid crystal display device in which a display defect is less likely to occur even when an alignment layer is not formed. The liquid crystal display device of the present invention includes a pair of substrates and a liquid crystal layer held between the pair of substrates, at least one of the substrates including an electrode, and the liquid crystal layer having negative dielectric anisotropy, in which each of the pair of substrates includes a silane coupling layer on a surface of the corresponding substrate, a polymer layer configured to vertically align adjacent liquid crystal molecules is formed on a surface of the silane coupling layer, the polymer layer is formed by the polymerization of at least one monomer contained in a liquid crystal composition, and the at least one monomer contains a compound represented by the chemical formula (1)..
09/25/14
20140284733
 Magnetoresistive element patent thumbnailMagnetoresistive element
According to one embodiment, a magnetoresistive element comprises a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous w.. .
09/25/14
20140284523
 Liquid crystal composition and liquid crystal display device patent thumbnailLiquid crystal composition and liquid crystal display device
A liquid crystal composition is described, which has a negative dielectric anisotropy and contains a specific compound having high stability to ultraviolet light as a first component, and may further contain a specific compound having a large negative dielectric anisotropy as a second component, a specific compound having a high maximum temperature or a small viscosity as a third component, and a specific compound having a polymerizable group as an additive component. An am liquid crystal display device is also described, including the liquid crystal composition..
09/18/14
20140271324
 Synthesis of ordered l10-type feni nanoparticles patent thumbnailSynthesis of ordered l10-type feni nanoparticles
Particles of iron and nickel are added to a flowing plasma stream which does not chemically alter the iron or nickel. The iron and nickel are heated and vaporized in the stream, and then a cryogenic fluid is added to the stream to rapidly cause the formation of nanometer size particles of iron and nickel.
09/18/14
20140268982
 Racetrack memory with electric-field assisted domain wall injection for low-power write operation patent thumbnailRacetrack memory with electric-field assisted domain wall injection for low-power write operation
Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire.
09/18/14
20140268981
 Racetrack memory with electric-field assisted domain wall injection for low-power write operation patent thumbnailRacetrack memory with electric-field assisted domain wall injection for low-power write operation
Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire.
09/18/14
20140268160
 Specular object scanner for measuring reflectance properties of objects patent thumbnailSpecular object scanner for measuring reflectance properties of objects
An apparatus to measure surface orientation maps of an object may include a light source that is configured to illuminate the object with a controllable field of illumination. One or more cameras may be configured to capture at least one image of the object.
09/18/14
20140264887
Oriented crystal nanowire interconnects
Interconnects for semiconductors formed of materials that exhibit crystallographic anisotropy of the resistivity size effect such that line resistivity in one crystallographic orientation becomes lower than the resistivity in the other directions and methods of fabrication and use thereof are described. A wire having a dimension that results in an increase in the electrical resistivity of the wire can be formed of a material with a conductive anisotropy due to crystallographic orientation relative to the direction of current flow that minimizes the increase in the electrical resistivity as compared to the other orientations at that dimension..
09/18/14
20140264669
Magnetic memory element
A magnetic memory element includes a memory layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is variable, a reference layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is not variable, and a tunnel barrier layer which is interposed between the memory layer and the reference layer. The memory layer is made of an alloy including cobalt (co) andiron (fe).
09/18/14
20140264663
Memory cells, methods of fabrication, semiconductor device structures, and memory systems
Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (fe).
09/18/14
20140262250
Removal of fracture-induced anisotropy from converted-wave seismic amplitudes
The present disclosure provides a system and method for inferring one or more physical property parameters of a sub-surface media by inverting converted wave data acquired during a seismic survey. Composite seismic traces are generated at a plurality of survey azimuths (step 609).
09/18/14
20140260800
Method for producing magnetic powder for forming sintered body that is precursor of rare-earth magnet
A method for producing magnetic powder for forming a sintered body that is a precursor of a rare-earth magnet. Provided is a method for producing magnetic powder for forming a sintered body that is a precursor of a rare-earth magnet, which can produce magnetic powder with a structure containing optimal nanosized crystal grains by accurately and efficiently sorting out magnetic powder containing no coarse grains in the structure thereof.
09/11/14
20140257703
Real-time formation anisotropy and dip evaluation using multiaxial induction measurements
Methods and systems are provided for logging a formation by combining results for a zero-dimensional inversion of conductivity measurements with results for a higher-order inversion of a subset of the conductivity measurement. The higher order inversion can include a 1d-radial portion and a 1d-axial portion.
09/11/14
20140253833
Phase difference layer laminated body for three dimensional liquid crystal display device and manufacturing method thereof
A phase difference layer laminated body used in a three-dimensional liquid crystal display device, wherein unit cells are divided into groups for left and right eyes, which are given different degrees of polarization, thereby creating a three-dimensional image, further wherein the phase difference layer laminated body has a base material having orientability, and a phase difference layer made of a liquid crystal material that can form a nematic phase and formed in a pattern with two different portions, and the liquid crystal material in each of two different portions is oriented to have different refractive index anisotropy each other that conforms to the two different degrees of polarization and fixed as it is.. .
09/11/14
20140251506
Iron-based composition for magnetocaloric effect (mce) applications and method of making a single crystal
A method of making a single crystal comprises heating a material comprising magnetic anisotropy to a temperature t sufficient to form a melt of the material. A magnetic field of at least about 1 tesla is applied to the melt at the temperature t, where a magnetic free energy difference Δgm between different crystallographic axes is greater than a thermal energy kt.
09/11/14
20140250998
Detection of permeability anisotropy in the horizontal plane
A method for detection of permeability anisotropy, having steps of positioning a formation testing tool, conducting a series of three flow tests with the testing tool wherein a first test is a four drain flow test, a second test is a pair of opposite drains flowing on diametrically opposite sides of the formation testing tool and a third test is a second pair of opposite drains flowing on opposite drains different than the second test; determining one of horizontal permeability and horizontal mobility, determining one of orthogonal components of horizontal permeability and horizontal mobility based on the measured flow response and determining a direction of the orthogonal components of the horizontal permeability or horizontal mobility with respect to the orientation of the formation testing tool based on a measured flow response.. .
09/04/14
20140247520
Magnetic storage medium and magnetic recording apparatus
According to one embodiment, a magnetic storage medium includes a plurality of recording layers and a first non-magnetic layer. The plurality of recording layers each includes at least one first magnetic layer and at least one second magnetic layer.
09/04/14
20140247409
Liquid crystal display
A liquid crystal display according to an embodiment of the present invention includes: first and second substrates opposed to each other; a liquid crystal layer including liquid crystal molecules interposed between the first and second substrates; a gate line formed on the first substrate and transmitting a gate signal; first and second data lines formed on the first substrate and transmitting first and second data voltages having different polarities; a first switching element connected to the gate line and the first data line; a second switching element connected to the gate line and the second data line; and first and second pixel electrodes that are connected to the first and second switching elements, respectively, and separated from each other, wherein the liquid crystal layer has positive dielectric anisotropy.. .
09/04/14
20140247043
High resolution planar hall effect sensors
The present invention discloses a planar hall-effect sensor with a magnetic sensing region of an elongated shape, wherein, for a ratio of long axis length to short axis length greater than a predetermined number, effective single magnetic domain behavior is exhibited in the sensing region, the sensing having shape-induced uniaxial magnetic anisotropy with the easy axis parallel to the long axis of the magnetic sensing region; further wherein the magnitude of the uniaxial magnetic anisotropy depends on the ratio of the thickness of the sensing region to the length of the short axis.. .
09/04/14
20140246741
Magnetoresistive memory cell and method of manufacturing the same
A stt-mram comprises apparatus and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of a three-terminal magnetoresistive memory element having a voltage-gated recording. The first terminal, a bit line, is connected to the top magnetic reference layer, and the second terminal is located at the middle recording layer which is connected to the underneath select cmos transistor through a via and the third one, a digital line, is a voltage gate with a narrow pillar underneath the memory layer across an insulating functional layer which is used to reduce the write current by manipulating the perpendicular anisotropy of the recording layer.
08/28/14
20140242415
High-strength hot-dip galvanized steel sheet and high-strength alloyed hot-dip galvanized steel sheet having excellent formability and small material anisotropy with ultimate tensile strength of 980 mpa or more and manufacturing method therefor
Provided is a high-strength hot-dip galvanized steel sheet having small material anisotropy and excellent formability with an ultimate tensile strength of 980 mpa or more. The hot-dip galvanized steel sheet includes a hot-dip galvanized layer formed on a surface of a base steel plate.
08/28/14
20140242267
Rare-earth magnet and method for producing the same
Provided is a rare-earth magnet containing no heavy rare-earth metals such as dy or tb in a grain boundary phase, has a modifying alloy for increasing coercivity (in particular, coercivity under a high-temperature atmosphere) infiltrated thereinto at lower temperature than in the conventional rare-earth magnets, has high coercivity, and has relatively high magnetizability, and a production method therefor. The rare-earth magnet rm includes a re-fe—b-based main phase mp with a nanocrystalline structure (where re is at least one of nd or pr) and a grain boundary phase bp around the main phase, the grain boundary phase containing a re-x alloy (where x is a metallic element other than heavy rare-earth elements).
08/28/14
20140241137
Tilted structures to reduce reflection in laser-assisted tamr
A tamr (thermal assisted magnetic recording) write head uses the energy of optical-laser excited surface plasmons in a plasmon generator to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. The optical radiation is transmitted to the plasmon generator by means of a waveguide, whose optical axis (centerline) is tilted relative to either or both the backside surface normal and abs surface normal in order to eliminate back reflections of the optical radiation that can adversely affect the properties and performance of the laser.
08/28/14
20140240074
Systems and methods for making radially anisotropic thin-film magnetic torroidal cores, and radially anisotropic cores having radial anisotropy, and inductors having radially anisotropic cores
A radially anisotropic toroidal magnetic core is fabricated by a method including providing apparatus having a first magnet for providing a radial magnetic field extending across a cavity from an axial spindle to a surrounding second magnetic element, placing a substrate in the cavity, the substrate having a hole fitting around the head of the spindle; and sputter-depositing a film of ferromagnetic material onto the substrate. An alternative fabrication uses a similar fixture to impose magnetic anisotropy by annealing a previously-formed toroidal core.
08/28/14
20140239226
Nematic liquid crystal composition and liquid crystal display device using the same
A liquid crystal composition of the present invention is used for a liquid crystal display device of an active matrix driving mode which is required to have fast response. The liquid crystal composition has negative dielectric anisotropy, a large absolute value thereof, and low viscosity.
08/28/14
20140238553
Sintered body that is precursor of rare-earth magnet, and method for producing magnetic powder for forming the same
Provided are a sintered body for forming a rare-earth magnet with a high degree of orientation and high remanent magnetization, and a method for producing magnetic powder for forming the sintered body. A sintered body s that is a precursor of a rare-earth magnet, the sintered body s including crystal grains g2 of an nd—fe—b-based main phase with a nanocrystalline structure, and a grain boundary phase around the main phase, and the rare-earth magnet being adapted to be formed by applying hot deformation processing to the sintered body s for imparting anisotropy thereto and further diffusing an alloy for improving coercivity therein.
08/14/14
20140226196
Optical elements, light source devices, and projection type display devices
An optical element according to the present invention includes a carrier generation layer that generates carriers with light; a plasmon excitation layer that is located on the carrier generation layer and that has a plasma frequency greater than the frequency of light that occurs in the carrier generation layer when it is excited with light that exits the light emitting element; an exit layer that is located on the plasmon excitation layer and that converts surface plasmons generated in the plasmon excitation layer into light having a predetermined exit angle; and at least one anisotropic dielectric layer that has anisotropy on an incident side in a direction from the plasmon excitation layer to the carrier generation layer.. .
08/14/14
20140226119
Nematic liquid crystal composition and liquid crystal display element using the same
The nematic liquid crystal composition exhibits a negative dielectric anisotropy (Δ∈), the liquid crystal composition being useful as a liquid crystal display material, and a liquid crystal display element using the same. The liquid crystal composition of the present invention has a large absolute value of the dielectric anisotropy thereof and a low viscosity.
08/14/14
20140225036
Nematic liquid crystal composition
A nematic liquid crystal composition of the present invention is used in liquid crystal display devices of the tn mode, ocb mode, ecb mode, ips mode, or va-ips mode. The liquid crystal composition has positive dielectric anisotropy.
08/07/14
20140220240
Patterned mr device with controlled shape anisotropy
A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material.
08/07/14
20140218824
Reduced adjacent track errors in bit-patterned media
The present disclosure relates to a magnetic medium that includes a substrate and a bit patterned magnetic layer applied to the substrate. The bit-patterned magnetic layer includes islands and each island includes a first magnetic material having a first magnetic anisotropy and that has a top surface, a bottom surface, and a peripheral surface.
08/07/14
20140218649
Liquid crystal lens
Provided are a liquid crystal lens, an optical filter, and a display device. The exemplary liquid crystal lens may exhibit optical anisotropy and optical isotropy according to a polarization state of incident light.
08/07/14
20140218020
Patterned mr device with controlled shape anisotropy
A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material.
08/07/14
20140217531
Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications
A mtj for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (pma) in an overlying laminated layer with a (co/x)n or (cox)n composition where n is from 2 to 30, x is one of v, rh, ir, os, ru, au, cr, mo, cu, ti, re, mg, or si, and cox is a disordered alloy. The seed layer is preferably nicr, nifecr, hf, or a composite thereof with a thickness from 10 to 100 angstroms.
08/07/14
20140217530
Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications
A mtj for a spintronic device that is a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (pma) in an overlying laminated layer with a (co/x)n or (cox)n composition where n is from 2 to 30, x is one of v, rh, ir, os, ru, au, cr, mo, cu, ti, re, mg, or si, and cox is a disordered alloy. The seed layer is preferably nicr, nifecr, hf, or a composite thereof with a thickness from 10 to 100 angstroms.
08/07/14
20140217529
Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications
A mtj for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (pma) in an overlying laminated layer with a (co/x)n or (cox)n composition where n is from 2 to 30, x is one of v, rh, ir, os, ru, au, cr, mo, cu, ti, re, mg, or si, and cox is a disordered alloy. The seed layer is preferably nicr, nifecr, hf, or a composite thereof with a thickness from 10 to 100 angstroms.
07/31/14
20140212614
Wholly aromatic polyester and polyester resin composition
A wholly aromatic polyester being excellent in heat resistance and toughness and being capable of being produced in an ordinary polymerization device, which exhibits optical anisotropy when it is molten, containing the constitutional unit (i) derived from 4-hydroxybenzoic acid, the constitutional unit (ii) derived from 6-hydroxy-2-naphthoic acid, the constitutional unit (iii) derived from 1,4-phenylenedicarboxylic acid, the constitutional unit (iv) derived from 1,3-phenylenedicarboxylic acid and the constitutional unit (v) derived from 4,4′-dihydroxybiphenyl, containing the constitutional unit (i) in an amount of 35 to 75 mol %, the constitutional unit (ii) in an amount of 2 to 8 mol %, the constitutional unit (iii) in an amount of 4.5 to 30.5 mol %, the constitutional unit (iv) in an amount of 2 to 8 mol %, the constitutional unit (v) in an amount of 12.5 to 32.5 mol %, the total of constitutional units (ii) and (iv) being in an amount of 4 to 10 mol %.. .
07/31/14
20140210025
Spin transfer mram element having a voltage bias control
A stt-mram comprises apparatus, a method of operating a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a bias voltage controlled perpendicular anisotropy of a recording layer through an interlayer interaction to achieve a lower spin-transfer switching current. The anisotropy modification layer is under an electric field along a perpendicular direction with a proper voltage between a digital line and a bit line from a control circuitry, accordingly, the energy switch barrier is reduced in the spin-transfer recording while maintaining a high thermal stability and a good retention..
07/24/14
20140206106
Magnetic memory and method of manufacturing the same
A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane.
07/24/14
20140206104
Strain induced reduction of switching current in spin-transfer torque switching devices
Partial perpendicular magnetic anisotropy (ppma) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an mtj to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the mtj results.
07/24/14
20140203385
Magnetic memory and method of manufacturing the same
According to one embodiment, a magnetic memory comprises an electrode, a memory layer which is formed on the electrode and has magnetic anisotropy perpendicular to a film plane, and in which a magnetization direction is variable, a tunnel barrier layer formed on the memory layer, and a reference layer which is formed on the tunnel barrier layer and has magnetic anisotropy perpendicular to the film plane, and in which a magnetization direction is invariable. The memory layer has a positive magnetostriction constant on a side of the electrode, and a negative magnetostriction constant on a side of the tunnel barrier layer..
07/24/14
20140203383
Perpendicular magnetoresistive memory element
A perpendicular magnetoresistive memory element comprises a three-terminal structure having a thick multilayered recording layer connected to a middle electrode and a functional layer having rocksalt crystal structure interfacing to the recording layer. The interface crystal grain structures between the functional layer and the recording layer provides an electric field manipulated perpendicular anisotropy enabling a low spin transfer write current..
07/17/14
20140198614
S-wave anisotropy estimate by automated image registration
The present disclosure provides a system and method for estimating fracture density within a subsurface formation from s-wave seismic data. In one embodiment, the s-wave seismic data is separated into fast (“s1”) and slow (“s2”) data.
07/17/14
20140198564
Magnetoresistive element and method of manufacturing the same
A planar stt-mram comprises apparatus, a method of operating and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a ferromagnetic recording layer forming a flux closure with a self-aligned ferromagnetic soft adjacent layer which has an electric field enhanced perpendicular anisotropy through an interface interaction with a dielectric functional layer. The energy switch barrier of the soft adjacent layer is reduced under an electric field along a perpendicular direction with a proper voltage on a digital line from a control circuitry; accordingly, the in-plane magnetization of the recording layer is readily reversible in a low spin-transfer switching current..
07/17/14
20140198321
Surface shape measuring apparatus
In related art, consideration is not given to that a spatial distribution of scattered light changes in various direction such as forward/backward/sideways according to a difference in micro roughness. Particularly, although a step-terrace structure appearing on an epitaxial growth wafer produces anisotropy in the scattered light distribution, consideration is not given to this point in the related art.
07/17/14
20140198291
Liquid crystal composition and liquid crystal display device
A liquid crystal composition satisfying at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of the nematic phase, a small viscosity, a suitable optical anisotropy, a large dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to heat, or having a suitable balance regarding at least two of the characteristics is provided; and an am device having a short response time, a suitable pretilt, a large voltage holding ratio, a large contrast ratio, a long service life and so forth is provided. A solution is a liquid crystal composition containing a specific compound having a high maximum temperature and a large dielectric anisotropy as a first component and a polymerizable compound as a second component, and a liquid crystal display device including the composition..
07/17/14
20140198272
Patterned retardation film, patterned polarizing plate, image displaying device, and stereo picture displaying system
To reduce the crosstalk caused by the optical characteristic of the support film. A patterned retardation film comprising at least a support film (14) having optical anisotropy and a patterned retardation layer (12) disposed on the support film and having a first retardation region and a second retardation region, at least one of an in-plane slow axis direction and a retardation being different between the first and second retardation regions, wherein a variation in the in-plane slow axis direction of the support film is 3° or more..
07/10/14
20140192306
Alignment layer and liquid crystal display having the same
Disclosed are an alignment layer and a liquid crystal display having the same. The alignment layer comprises a polyimide compound having an azo group and exhibiting optical alignment characteristics and a discotic liquid crystal compound exhibiting optical anisotropy.
07/10/14
20140191158
Liquid crystal composition and liquid crystal display device with the liquid crystal composition
A liquid crystal composition that is useful for an active matrix (am) device has a nematic phase and positive dielectric anisotropy. An active matrix liquid crystal display device includes the liquid crystal composition.
07/03/14
20140186637
Organic compound, optical film and method of production thereof
An organic compound has the general structural formula i. In the formula i, core is a conjugated organic unit capable of forming a rod-like macromolecule, n is a number of the conjugated organic units in the rod-like macromolecule, gk is a set of ionogenic side-groups, and k is a number of the side-groups in the set gk.
07/03/14
20140184962
Stereoscopic display device
The purpose of the present invention is to provide a vertically and horizontally positionable stereoscopic display device that can obtain an excellent stereoscopic display by reducing light leakage through areas (inter-line areas) between drive electrodes (36, 42) and auxiliary electrodes (38, 44) and improving light shielding properties of light shielding parts. A switching liquid crystal panel (14) provided in the stereoscopic display device of the present invention realizes a parallax barrier (48) in which transmission parts (52) and light shielding parts (50) are arrayed alternately.
07/03/14
20140183608
Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer
The present invention is directed to a spin transfer torque (stt) mram device having a perpendicular magnetic tunnel junction (mtj) memory element. The memory element includes a perpendicular mtj structure in between a non-magnetic seed layer and a non-magnetic cap layer.
07/03/14
20140183409
Liquid crystal composition, antioxidant and liquid crystal display device
A liquid crystal composition including an antioxidant, and a liquid crystal display device containing this composition are described. The liquid crystal composition has a nematic phase, has a high solubility in a liquid crystal composition, and includes a specific antioxidant useful for preventing deterioration of the composition.
07/03/14
20140183158
Method for improving anisotropy of carbon nanotube film and method for making touch panel
A method for improving anisotropy of a carbon nanotube film is provided. The carbon nanotube film is drawn from a carbon nanotube array.
06/26/14
20140177369
Optical data store and method for storage of data in an optical data store
An optical data store is specified, having a data storage layer with a non-toxic and biodegradable polymer as light-sensitive storage medium which has photo-inducible anisotropy, for the induction of which a threshold value of the optical intensity has to be exceeded. The light-sensitive material is preferably bacteriorhodopsin which, by way of example, is immobilized in a manner embedded in a suitable matrix material or, if appropriate, in a crosslinked manner.
06/26/14
20140177328
Multi-bit magnetic memory cell
A device (20) for storing data includes at least first and second ferromagnetic films (f1, f2) and a sensing circuit (28). The ferromagnetic films both have perpendicular magnetic anisotropy that is configured responsively to the stored data, and are connected so that an electrical current traverses the first and second ferromagnetic films and generates respective first and second extraordinary hall voltages therein.
06/26/14
20140177327
Voltage-controlled magnetic anisotropy (vcma) switch and magneto-electric memory (meram)
Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics..
06/26/14
20140177104
Perpendicular magnetic write head and magnetic recording device
A trailing shield is provided on a trailing side of a magnetic pole with a non-magnetic gap layer in between, and an intermediate layer having negative uniaxial magnetocrystalline anisotropy is provided between the non-magnetic gap layer and the trailing shield. The intermediate layer has a magnetic property in which an easy axis of magnetization is provided in an in-plane direction and thus magnetization is likely to occur in that direction, whereas a difficult axis of magnetization is provided in a direction intersecting the in-plane direction and thus magnetization is less likely to occur in that direction.
06/26/14
20140175582
Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer.
06/26/14
20140175574
Method and system for providing magnetic junctions having improved polarization enhancement and reference layers
A magnetic junction is provided. The magnetic junction includes a reference stack, a nonmagnetic spacer layer and a free layer.
06/26/14
20140175428
Perpendicular magnetoresistive elements
A perpendicular magnetoresistive element comprises a novel buffer layer having rocksalt crystal structure interfacing to a cofeb-based recording layer has (100) plane parallel to the substrate plane and with {110} lattice parameter being slightly larger than the bcc cofe lattice parameter along {100} direction, and crystallization process of amorphous cofeb material in the recording layer during thermal annealing leads to form bcc cofe grains having epitaxial growth with in-plane expansion and out-of-plane contraction. Accordingly, a perpendicular anisotropy, as well as a perpendicular magnetization, is induced in the recording layer.
06/19/14
20140169085
Voltage-controlled magnetic memory element with canted magnetization
A memory cell including information that is stored in the state of a magnetic bit (i.e. In a free layer, fl), where the fl magnetization has two stable states that may be canted (form an angle) with respect to the horizontal and vertical directions of the device is presented.
06/19/14
20140169083
Magnetoresistive layer structure with voltage-induced switching and logic cell application
Embodiments of the invention include a voltage-switching mtj cell structure that includes two sub-mtjs in series. Each free layer can be switched independently from the other.


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Anisotropy topics: Anisotropy, Liquid Crystal, Liquid Crystal Display, Magnetic Field, Image Display Apparatus, Electrostatically, Benzene Ring, Longitudinal Direction, Motorcycle, Magnetoresistance, Memory Cell, Enhancement, Random Access, Data Storage, Magnetic Resonance Imaging

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