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Date/App# patent app List of recent Amorphous-related patents
04/17/14
20140107592
 Coating comprising a terpolymer comprising caprolactone and glycolide patent thumbnailCoating comprising a terpolymer comprising caprolactone and glycolide
The present invention provides a coating comprising a reservoir layer comprising a terpolymer comprising caprolactone and glycolide and a primer layer comprising an amorphous polymer on an implantable device and methods of making and using the same.. .
04/17/14
20140107269
 Thermoplastic elastomers exhibiting superior barrier properties patent thumbnailThermoplastic elastomers exhibiting superior barrier properties
A blend of styrene-isobutylene-styrene based thermoplastic elastomer and organoclay-filled polyamide is disclosed which has good processability and more effective barrier properties for oxygen than the blend using amorphous or crystalline polyamide without organoclay.. .
04/17/14
20140106561
 Graphene barrier layers for interconnects and methods for forming the same patent thumbnailGraphene barrier layers for interconnects and methods for forming the same
Embodiments described herein provide interconnect barrier layers and methods for forming such barriers. A dielectric body having a trench formed in a surface thereof is provided.
04/17/14
20140106515
 Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same patent thumbnailAmorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same
In an amorphous silicon thin film transistor-liquid crystal display device and a method of manufacturing the same, gate patterns including a gate line and a gate electrode are formed on an insulation substrate having a display region and a driving circuit region on which a plurality of shift resistors are formed. A gate insulating film, active layer patterns and data patterns including source/drain electrodes are formed successively on the substrate.
04/17/14
20140106275
 Electrostatic-image developing toner, electrostatic image developer, toner cartridge, process cartridge, image-forming apparatus, and method for forming image patent thumbnailElectrostatic-image developing toner, electrostatic image developer, toner cartridge, process cartridge, image-forming apparatus, and method for forming image
An electrostatic-image developing toner contains an amorphous polyester resin that has repeating units having a backbone derived from dehydroabietic acid in a main chain thereof and that has a weight average molecular weight of about 30,000 to about 80,000; and at least one of a crystalline polyester resin containing a dicarboxylic acid (c10) and a diol (c9) as polymerization components and a crystalline polyester resin containing a dicarboxylic acid (c9) and a diol (c10) as polymerization components.. .
04/17/14
20140106220
 Phase separated silicon-tin composite as negative electrode material for lithium-ion and lithium sulfur batteries patent thumbnailPhase separated silicon-tin composite as negative electrode material for lithium-ion and lithium sulfur batteries
A composite of silicon and tin is prepared as a negative electrode composition with increased lithium insertion capacity and durability for use with a metal current collector in cells of a lithium-ion battery or a lithium-sulfur battery. This negative electrode material is formed such that the silicon is present as a distinct amorphous phase in a matrix phase of crystalline tin.
04/17/14
20140105955
 Thermoplastic fluoropolymer-coated medical devices patent thumbnailThermoplastic fluoropolymer-coated medical devices
A medical device provided with at least a partial surface coating of a thermoplastic copolymer of tetrafluoroethylene and perfluoroalkylvinylether that is free of cross-linking monomers and curing agents. The fluoropolymer coating is preferably an amorphous thermoplastic, is highly inert and biocompatible, has elastomeric characteristics that provide desirable mechanical properties such as good flexibility and durability.
04/17/14
20140105953
 Antimicrobial glass-ceramics patent thumbnailAntimicrobial glass-ceramics
The application discloses the formation of antimicrobial glass-ceramic articles having an amorphous phase and a crystalline phase and an antimicrobial agent selected from the group consisting of silver, copper and a mixture of silver and copper. The antimicrobial glass-ceramic can have a log reduction of >2..
04/17/14
20140105937
 Topical ubiquinol oral supplement compositions with amorphous calcium phosphate patent thumbnailTopical ubiquinol oral supplement compositions with amorphous calcium phosphate
Topical, ubiquinol, adjunctive, supplement compositions, containing amorphous calcium phosphate fluoride (acpf), useful in: reducing oxidative stress, relieving oral discomfort and dry mouth, and remineralizing hydroxyapatite; comprising: ubiquinol in an aqueous-free emulsion that also contains: a stabilizing composition for ubiquinol, spilanthes extract, a trans-oral mucosal, absorption facilitator and acpf; wherein: the emulsion forms a mucoadhesive gel in the presence of saliva that undergoes gradual saliva dissolution effecting passive diffusion of the ubiquinol supplement and the spilanthes extract into the oral mucosa, and remineralizing of tooth surfaces with acpf; resulting in: adjunctively increasing ubiquinol levels, reducing oxidative stress, regulating immune response, relieving oral discomfort and dry mouth, and remineralizing tooth surfaces.. .
04/17/14
20140104353
 Phase change inks comprising fatty acids patent thumbnailPhase change inks comprising fatty acids
A solid ink composition suitable for ink jet printing, including printing on coated paper substrates. In embodiments, the solid ink composition comprises both a crystalline compound and an amorphous compound, and a fatty acid, which provides for a robust ink wherein the phase change ink crystallizes faster from the liquid state than the same composition without the fatty acid..
04/17/14
20140103444
Semiconductor device with a dislocation structure and method of forming the same
A semiconductor device with bi-layer dislocation and method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility.
04/17/14
20140103341
Method for producing amorphous oxide thin film and thin film transistor
A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and in, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cm−1 to 1520 cm−1 in an infrared absorption spectrum obtained by performing a measurement by fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cm−1 to 1450 cm−1 and an infrared wave number range of from more than 1450 cm−1 to 1520 cm−1, a peak positioned within the infrared wave number range of from 1380 cm−1 to 1450 cm−1 exhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cm−1 to 1750 cm−1; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transform the second oxide precursor film into an amorphous oxide thin film containing in.. .
04/17/14
20140103284
Reram cells including taxsiyn embedded resistors
Provided are resistive random access memory (reram) cells and methods of fabricating thereof. A reram cell includes an embedded resistor and a resistive switching layer connected in series with this resistor.
04/17/14
20140102595
Fe-based amorphous alloy and dust core made using fe-based amorphous alloy powder
An fe-based amorphous alloy of the present invention has a composition represented by formula (fe100-a-b-c-d-ecrapbccbdsie (a, b, c, d, and e are in terms of at %), where 0 at %≦a≦1.9 at %, 1.7 at %≦b≦8.0 at %, 0 at %≦c≦1.0 at %, an fe content (100-a-b-c-d-e) is 77 at % or more, 19 at %≦b+c+d+e≦21.1 at %, 0.08≦b/(b+c+d)≦0.43, 0.06≦c/(c+d)≦0.87, and the fe-based amorphous alloy has a glass transition temperature (tg).. .
04/17/14
20140102528
Photovoltaic device
A photovoltaic device is provided having a semiconductor substrate, an i-type amorphous layer formed over a front surface of the semiconductor substrate, a p-type amorphous layer formed over the i-type amorphous layer, an i-type amorphous layer formed over aback surface of the semiconductor substrate, and an n-type amorphous layer formed over the i-type amorphous layer. The i-type amorphous layer and the i-type amorphous layer have oxygen concentration profiles in which concentrations are reduced in a step-shape from regions near interfaces with the semiconductor substrate and along a thickness direction, and an oxygen concentration in the step-shape portion of the i-type amorphous layer is higher than an oxygen concentration in the step-shape portion of the i-type amorphous layer..
04/17/14
20140102527
Photovoltaic device
A photovoltaic device may be provided having a semiconductor substrate, an i-type amorphous layer or an i-type amorphous layer formed over a front surface or a back surface of the semiconductor substrate, and a p-type amorphous layer or an n-type amorphous layer formed over the i-type amorphous layer or the i-type amorphous layer. The i-type amorphous layer or the i-type amorphous layer has an oxygen concentration profile in which a concentration is reduced in a step-shape from a region near an interface with the semiconductor substrate and along a thickness direction..
04/17/14
20140102399
Engine component
The present invention has the objective of solving the problems encountered in coating engine components (engine blocks or sleeves, either fixed or movable) having at least one cylindrical cavity and composed mainly by iron or aluminum, providing them with a coating (3) that is subdivided into three different layers, which are deposited onto the metallic substrate (1), which are first sub-layer (21) comprising at least 80% silicon deposited onto the substrate (1) with the function of providing interface with good adhesion between the substrate (1) and the subsequent sub-layers, which contain hydrogenated amorphous carbon, second sub-layer (22) of transition comprising a percentage of silicon and of hydrogenated amorphous carbon (a-c:h:si) and, finally, on the working surface, third sub-layer (23) having a pure composition of hydrogenated amorphous carbon (a-c:h), wherein such coating (3) is generated by the hollow cathode effect (hce) by plasma-enhanced chemical vapor deposition (pecvd).. .
04/17/14
20140102163
Forming of metallic glass by rapid capacitor discharge forging
A forging apparatus and method of uniformly heating, rheologically softening, and thermoplastically forming metallic glasses rapidly into a net shape using a rapid capacitor discharge forming (rcdf) tool are provided. The rcdf method utilizes the discharge of electrical energy stored in a capacitor to uniformly and rapidly heat a sample or charge of metallic glass alloy to a predetermined “process temperature” between the glass transition temperature of the amorphous material and the equilibrium melting point of the alloy in a time scale of several milliseconds or less.
04/10/14
20140100335
Polymer composition, adhesive composition, temperature-responsive sheet produced using said polymer composition, and cold-release adhesive sheet produced using said adhesive composition
The purpose of the present invention is to provide a polymer composition which enables the steady and easy production of a temperature-responsive sheet. Provided is a polymer composition comprising a water-dispersible side-chain crystalline polymer and a water-dispersible amorphous polymer..
04/10/14
20140100252
Amorphous ritonavir co-precipitated
The present invention relates to amorphous ritonavir co-precipitated on copovidone, process for its preparation and pharmaceutical compositions comprising it.. .
04/10/14
20140099780
Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation
Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation. A method includes forming a dopant-containing amorphous silicon layer stack on at least one portion of a surface of a crystalline semiconductor layer, and irradiating a selected area of the dopant-containing amorphous silicon layer stack, wherein the selected area of the dopant-containing amorphous silicon layer stack interacts with an upper portion of the underlying crystalline semiconductor layer to form a doped, conductive crystalline region, and each non-selected area of the dopant-containing amorphous silicon layer stack remains intact on the at least one portion of the surface of the crystalline semiconductor layer..
04/10/14
20140099748
Hybrid multi-junction photovoltaic cells and associated methods
A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap group ib-iiib-vib2 material solar absorber layer is formed on the back contact layer.
04/10/14
20140099579
Electrostatic charge image developing toner, electrostatic charge image developer, toner cartridge, process cartridge, image forming apparatus, and image forming method
An electrostatic charge image developing toner includes toner particles having a core that includes a block copolymer of a crystalline polyester block and an amorphous polyester block, and a shell that covers the core and includes an amorphous polyester resin having an ethylenically unsaturated double bond, and of which a surface layer part includes a crosslinked product of the amorphous polyester resin having an ethylenically unsaturated double bond.. .
04/10/14
20140099551
Lithium secondary battery of high energy density with improved energy property
Disclosed is a high energy density lithium secondary battery including: a cathode that includes, as cathode active materials, a first cathode active material represented by formula 1 below and having a layered structure and a second cathode active material represented by formula 2 below and having a spinel structure, wherein the amount of the first cathode active material is between 40 and 100 wt % based on the total weight of the cathode active materials; an anode including crystalline graphite and amorphous carbon as anode active materials, wherein the amount of the crystalline graphite is between 40 and 100 wt % based on the total weight of the anode active materials; and a separator.. .
04/10/14
20140099541
Solid electrolyte battery and positive electrode active material
Provided are: a solid electrolyte battery using a novel positive electrode active material that functions in an amorphous state; and a novel positive electrode active material that functions in an amorphous state. The solid electrolyte battery includes: a positive electrode layer including a positive electrode active material layer; a negative electrode layer; and a solid electrolyte layer formed between the positive electrode layer and the negative electrode layer, and the positive electrode active material includes a lithium-boric acid compound in an amorphous state, which contains li, b, any element m1 selected from cu, ni, co, mn, au, ag, and pd, and o..
04/10/14
20140098604
Immunity of phase change material to disturb in the amorphous phase
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb..
04/10/14
20140097922
Fe-based amorphous alloy, powder core using the same, and coil encapsulated powder core
An fe-based amorphous alloy of the present invention has a composition formula represented by fe100-a-b-c-x-y-z-tniasnbcrcpxcybzsit, and in the formula, 1 at %≦a≦10 at %, 0 at %≦b≦3 at %, 0 at %≦c≦6 at %, 6.8 at %≦x≦10.8 at %, 2.2 at %≦y≦9.8 at %, 0 at %≦z≦4.2 at %, and 0 at %≦t≦3.9 at % hold. Accordingly, an fe-based amorphous alloy used for a powder core and/or a coil encapsulated powder core having a low glass transition temperature (tg), a high conversion vitrification temperature (tg/tm), and excellent magnetization and corrosion resistance can be manufactured..
04/10/14
20140097740
Plasma-generating device
A plasma-generating device includes an anode plate and a cathode plate spaced apart from the anode plate. The cathode plate includes a substrate and a hybrid diamond layer formed on the substrate.
04/10/14
20140097477
Magnetic random access memory and a method of fabricating the same
An aspect of the present embodiment, there is provided magnetic random access memory device including a semiconductor substrate, a selection transistor on the semiconductor substrate, the selection transistor including a diffusion layer, a contact plug on diffusion layer, an amorphous film on the contact plug, a lower electrode provided on the amorphous film, a first magnetic layer, a nonmagnetic layer, a second magnetic layer, an upper electrode stacked in an order and a sidewall contact film on the contact plug, the sidewall contact film being in contact with a sidewall of the upper electrode.. .
04/10/14
20140097434
Back-end-of-line metal-oxide-semiconductor varactors
Device structures, design structures, and fabrication methods for a varactor. The device structure includes a first electrode formed on a dielectric layer, and a semiconductor body formed on the first electrode.
04/10/14
20140097277
Biodegradable iron-containing compositions, methods of preparing and applications therefor
The invention relates to biodegradable iron alloy-containing compositions for use in preparing medical devices. In addition, biodegradable crystalline and amorphous compositions of the invention exhibit properties that make them suitable for use as medical devices for implantation into a body of a patient.
04/10/14
20140096820
Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation
Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation. A structure includes a crystalline semiconductor having at least one surface, a doped crystalline region disposed in at least one selected area of the semiconductor surface, and a dopant-containing amorphous silicon layer stack containing a same dopant as present in the doped crystalline region on at least a portion of the semiconductor surface outside the selected area, wherein the dopant-containing amorphous silicon layer stack passivates the portion of the semiconductor surface on which it is disposed..
04/10/14
20140096819
Solar cell and method for producing same
A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic amorphous silicon layer.
04/03/14
20140094023
Fabricating method of semiconductor chip
A fabricating method of a semiconductor chip includes the following steps. Firstly, a substrate is provided, wherein an amorphous semiconductor layer is formed in a first surface of the substrate.
04/03/14
20140093461
Solid cosmetic composition in compact powder form
The present invention relates to a solid cosmetic composition in the form of a compact powder, comprising, in a physiologically acceptable medium, at least: —a pulverulent phase in an amount of greater than or equal to 35% by weight relative to the total weight of the composition, —a liquid fatty phase comprising at least one non-volatile oil, and—at least one amorphous hydrocarbon-based block copolymer. The present invention also relates to a process for coating the face, and in particular the eyelids, with the said cosmetic composition..
04/03/14
20140093289
Image forming apparatus
An image forming apparatus has a system velocity of 400 to 1,700 mm/sec and includes a fixing belt including a base layer; a silicon rubber layer; and a fluorine resin layer. A thickness l2 of the fluorine resin layer is in range of 2≦l2≦20 μm.
04/03/14
20140091490
Process for manufacturing articles comprising polylactic acid polymers having improved heat resistance
A process for thermoforming a discrete section of an amorphous pliable thermoplastic sheet in a temperature-controlled thermoforming mold to provide a discrete thermoformed section having one or more discrete shaped articles formed therein and to heat the shaped articles to a temperature below the tm but above the tg of the polylactic acid polymer in the sheet to induce crystallization of the polylactic acid polymer in the shaped articles. While unconstrained by the thermoforming mold, the discrete thermoformed section is tempered at a temperature such that the polylactic acid polymer in the shaped articles achieves a degree of crystallization of at least about 5% (as measured by x-ray diffraction) to thereby increase heat resistance of the shaped articles..
04/03/14
20140091410
Method and apparatus for fabricating piezoresistive polysilicon by low-temperature metal induced crystallization
The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600° c. And a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer..
04/03/14
20140091407
Integrated semiconductor devices with amorphous silicon beam, methods of manufacture and design structure
Bulk acoustic wave filters and/or bulk acoustic resonators integrated with cmos processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam comprising amorphous silicon material and providing an insulator material over and adjacent to the amorphous silicon beam.
04/03/14
20140091379
Fluorocarbon coating having low refractive index
A fluorocarbon coating comprises an amorphous structure with cf2 bonds present in an atomic percentage of at least about 15%, and having a refractive index of less than about 1.4. The fluorocarbon coating can be deposited on a substrate by placing the substrate in a process zone comprising a pair of process electrodes, introducing a deposition gas comprising a fluorocarbon gas into the process zone, and forming a capacitively coupled plasma of the deposition gas by coupling energy to the process electrodes..
04/03/14
20140091305
Polysilicon thin film and manufacturing method thereof, array substrate and display device
A polysilicon thin film and a manufacturing method thereof, an array substrate and a display device are disclosed. The manufacturing method of the polysilicon thin film comprises the following steps: forming a graphene layer and an amorphous silicon layer which are adjacent; forming polysilicon by way of crystallizing amorphous silicon so as to obtain the polysilicon thin film.
04/03/14
20140090864
Surface-modified glass substrate
Scratch-resistant glass substrates including a hard, scratch-resistant layer over a major surface of the substrate are disclosed. The layer may exhibit a hardness, as measured using a berkovich indenter, of at least 10 gpa and an x-ray amorphous structure along at least a portion of the thickness of the layer.
04/03/14
20140090799
Melt-containment plunger tip for horizontal metal die casting
Various embodiments provide apparatus and methods for injection molding. In one embodiment, a constraining plunger may be configured in-line with an injection plunger to transfer a molten material from a melt zone and into a mold.
04/03/14
20140090798
Optimized multi-stage inductive melting of amorphous alloys
Described herein is a method of melting a bulk metallic glass (bmg) feedstock, comprising: heating at least a portion of the bmg feedstock to temperatures slightly below a solidus temperature of the bmg, wherein the portion remains a solid at the temperatures slightly below the solidus temperature and wherein a temperature distribution of the portion is essentially uniform; heating the portion of the bmg feedstock to temperatures above a liquidus point.. .
04/03/14
20140090796
Continuous amorphous feedstock skull melting
Described herein is a method of melting a bulk metallic glass (bmg) feedstock, comprising: feeding the bmg feedstock into a crucible; melting a first portion of the bmg feedstock to form molten bmg, while maintaining a second portion of the bmg feedstock solid; wherein the second portion and the crucible hold the molten bmg.. .
04/03/14
20140090793
Cold chamber die casting of amorphous alloys using cold crucible induction melting techniques
Various embodiments provide systems and methods for casting amorphous alloys. Exemplary casting system may include an insertable and rotatable vessel configured in a non-movable induction heating structure for melting amorphous alloys to form molten materials in the vessel.
04/03/14
20140090752
Coating of bulk metallic glass (bmg) articles
Exemplary embodiments described herein relate to methods and apparatus for forming a coating layer at least partially on surface of a bmg article formed of bulk solidifying amorphous alloys. In embodiments, the coating layer may be formed in situ during formation of a bmg article and/or post formation of a bmg article.
04/03/14
20140090704
Method and system for manufacturing back contacts of photovoltaic devices
A method for manufacturing a photovoltaic device includes a step of depositing one of an amorphous layer of znte and a multilayer stack of zn and te adjacent a semiconductor layer. The one of the amorphous layer and the multilayer stack is then subjected to an energy impulse at a temperature equal to or greater than its critical temperature.
03/27/14
20140088245
Hydrophobic polyester polycarbonate polyols for use in polyurethane applications
Disclosed are hydrophobic polyester-polycarbonate polyols which are the reaction product of (a) a polyester polyol and (b) one or more polycarbonate polyols. The polyester polyol (a) is the reaction product of: (i) one or more hydrophobic monomers, (ii) one or more organic acids, and (iii) one or more alcohols having an oh functionality of 2 or more.
03/27/14
20140088233
Biobased modifiers for polyvinylchloride blends
Compositions of polymer blends of polyvinylchloride (pvc), a low molecular weight plasticizer and polyhydroxyalkanoate (pha) are described. In certain embodiments, the pha is a poly-3-hydroxybutyrate-co-4-hydroxybutyrate copolymer having a weight percent 4-hydroxybutyrate of 30-45%.
03/27/14
20140088061
Pharmaceutical composition
The invention relates to a solid pharmaceutical composition comprising solid amorphous fulvestrant, said composition being formulated in combination with a solubilizing composition. The invention also relates to a method for preparing said composition and a kit including the composition..
03/27/14
20140087563
Method for positioning spacers in pitch multiplication
Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers.
03/27/14
20140087547
Manufacturing method for semiconductor device, annealing device, and annealing method
According to one embodiment, the manufacturing method for the semiconductor device according to the embodiment includes carrying out ion implantation to the semiconductor layer and forming an amorphous layer on the surface of the semiconductor layer, and a heat treatment process using microwave annealing at a temperature higher than or equal to 200° c. And lower than or equal to 700° c.
03/27/14
20140087532
Cmos transistor and method for fabricating the same
The invention provides a method for fabricating a cmos transistor and a method for fabricating an array substrate. The method for fabricating a cmos transistor comprises a step of forming channels, which comprises: depositing an amorphous silicon layer on a substrate, and crystallizing the amorphous silicon layer into a poly-silicon layer; implanting boron atoms into the poly-silicon layer and then forming an n channel region and a p channel region by etching the poly-silicon layer implanted with the boron atoms; forming a photoresist-partially-retained region corresponding to the n channel region and a photoresist-completely-retained region corresponding to the p channel region through a single patterning process; and removing the photoresist in the photoresist-partially-retained-region and retaining a part of the photoresist in the photoresist-completely-retained region using an ashing process, implanting phosphorus atoms through ion implantation thereby forming an n channel and a p channel..
03/27/14
20140087510
Manufacturing method of an amorphous-silicon flat-panel x-ray sensor
An embodiment of the present invention provides a manufacturing method of an amorphous-silicon flat-panel x-ray sensor; the method reduces the number of mask plates to be used, simplifies the production processes, saves production costs, while also improving the product yield. The manufacturing method comprises: on a substrate, after a gate scan line is formed, forming a data line, a tft switch element and a photosensitive element through one patterning process, wherein on the mask plate used in the patterning process, a region corresponding to a channel of the tft switch element is semi-transmissive, whereas regions respectively corresponding to the data line, the photosensitive element and the portion of the tft switch element other than the channel thereof are non-transmissive; thereafter, on the substrate formed with the tft switch element and the photosensitive element, a passivation layer and a bias line are formed..
03/27/14
20140087496
Methods and structures for forming and protecting thin films on substrates
A method for forming of a thin film on a substrate is disclosed. The method includes cleaning a process chamber by flowing a first gas having fluorine.
03/27/14
20140087249
Lithium ion battery
The purpose of the present invention is to provide a lithium-ion battery that exhibits excellent long-term life properties, does not suffer from rapid capacity degradation, and exhibits excellent charging/discharging characteristics in low-temperature environments. The present invention is directed to a lithium ion battery comprising: a negative electrode which comprises a negative electrode active material containing at least one of a graphite and an amorphous carbon, conductive additives containing a graphite, and a binder; a nonaqueous electrolyte solution; and a positive electrode containing a positive electrode active material capable of occluding and releasing lithium.
03/27/14
20140087108
Extrudable composition derived from renewable resources and method of making molded articles utilizing the same
Thus, the extrudable composition may comprise an extrudable composition having a heat deflection temperature greater than about 50° c. And a melting point between 80° c.
03/27/14
20140087089
Methods for hardening amorphous dielectric films in a magnetic head and other structures
A method in one embodiment includes exposing a side of a dielectric layer to a beam of charged particles for converting an amorphous component of at least a portion of a dielectric layer to a crystalline state, wherein the side of the dielectric layer of extends between adjacent layers. Another method includes forming a dielectric overcoat on a media facing side of a plurality of thin films, the thin films having at least one transducer formed therein; and exposing at least a portion of the overcoat to a beam of charged particles for converting an amorphous component of the dielectric overcoat of the thin films to a crystalline state.
03/27/14
20140085377
Inkjet recording device and method for maintaining same
There are provided an inkjet recording device that can stably secure liquid-repellent performance on a surface of a liquid-repellent film formed on a nozzle surface for a long term, and a maintenance method thereof. The inkjet recording device includes: an inkjet head that has a nozzle surface in which a nozzle opening of a nozzle to eject a liquid is formed and on which a liquid-repellent film is formed with an amorphous fluorine resin material; a cleaning portion that wipes off and cleans a surface of the liquid-repellent film by a wiping member; and a liquid-repellent performance recovery processing portion that performs liquid-repellent performance recovery processing to recover liquid-repellent performance on the surface of the liquid-repellent film by heating the liquid-repellent film..
03/27/14
20140084515
Implantable medical device made from an amorphous or very low crystallinity polymer construct
Methods of fabricating a polymeric implantable device with improved fracture toughness through annealing, nucleating agents, or both are disclosed herein. A polymeric construct that is completely amorphous or that has a very low crystallinity is annealed with no or substantially no crystal growth to increase nucleation density.
03/27/14
20140084389
Method of manufacturing semiconductor device, substrate processing method and apparatus, non-transitory computer readable recording medium, and semiconductor device
Provided are a semiconductor device manufacturing method by which a semiconductor device in which a threshold voltage is suppressed from changing can be manufactured, a substrate processing method and apparatus, a non-transitory computer-readable recording medium, and the semiconductor device. The semiconductor device manufacturing method includes forming an amorphous first oxide film including a first element on a substrate, and modifying the first oxide film to an amorphous second oxide film including the first element and a second element different from the first element by adding the second element to the first oxide film.
03/27/14
20140084268
Method of forming polysilicon film, thin film transistor and display device including polysilicon film
A method of forming a polysilicon film includes: forming an amorphous silicon film on a substrate; adsorbing a metal catalyst on the amorphous silicon film, crystallizing the amorphous silicon film through heat treatment to form the polysilicon film, the polysilicon film including a grain internal region and a grain boundary where the metal catalyst remains, providing an etchant having different oxidation selectivities with respect to the grain internal region and the grain boundary, and etching a surface of the polysilicon film by the etchant to remove the metal catalyst remaining on the grain boundary.. .
03/27/14
20140083907
Regenerated hydrocracking catalyst and method for producing a hydrocarbon oil
The regenerated hydrocracking catalyst according to the present invention is a regenerated hydrocracking catalyst prepared by regenerating a used hydrocracking catalyst including: a catalyst support containing zeolite and an amorphous composite metal oxide having solid acidity; and at least one active metal supported by the catalyst support, selected from noble metals of group 8 to group 10 in the periodic table, wherein the regenerated hydrocracking catalyst contains 0.05 to 1% by mass of a carbonaceous substance in terms of carbon atoms based on the entire mass of the catalyst.. .
03/27/14
20140083641
Methods of melting and introducing amorphous alloy feedstock for casting or processing
Various embodiments provide apparatus and methods for melting and introducing alloy feedstock for molding by using a hollow branch having a constraint mechanism therein. In one embodiment, a hollow branch can extend upward from a cold chamber that is substantially horizontally configured.
03/27/14
20140083640
Injection compression molding of amorphous alloys
Various embodiments provide methods and apparatus for forming bulk metallic glass (bmg) articles using a mold having a stationary mold part and a movable mold part paired to form a mold cavity. A molten material can be injected to fill the mold cavity.
03/27/14
20140083150
Forming of ferromagnetic metallic glass by rapid capacitor discharge
An apparatus and method of uniformly heating, rheologically softening, and thermoplastically forming magnetic metallic glasses rapidly into a net shape using a rapid capacitor discharge forming (rcdf) tool are provided. The rcdf method utilizes the discharge of electrical energy stored in a capacitor to uniformly and rapidly heat a sample or charge of metallic glass alloy to a predetermined “process temperature” between the glass transition temperature of the amorphous material and the equilibrium melting point of the alloy in a time scale of several milliseconds or less.
03/20/14
20140080974
Propylene copolymers for adhesive applications
Disclosed herein is an in-reactor produced multi-component copolymer comprises a semi-crystalline component having a crystallinity of 20% or more, and an amorphous component having a crystallinity of 5% or less. The copolymer comprises at least 80 wt % of units derived from propylene and from about 1 to about 20 wt % of units derived from at least one c6 to c12 alpha-olefin.
03/20/14
20140080964
Glue, its usage and method for applyong on a pvc floor
A glue is provided comprising by weight: styrene-ethylene/butylene-styrene block copolymer 15-30%; amorphous poly alpha olefin 2-20%; hydrogenated petroleum resin 20-40%; liquid isobutylene homopolymer 1-10%; mineral oil 20-50%; and antioxidants 0.1-2%. The glue has high strength when cured but low viscosity.
03/20/14
20140080282
Leakage reduction in dram mim capacitors
A method for forming a dram mim capacitor stack having low leakage current involves the use of a first electrode that serves as a template for promoting the high-k phase of a subsequently deposited dielectric layer. The high-k dielectric layer includes a doped material that can be crystallized after a subsequent annealing treatment.
03/20/14
20140080005
Secondary battery and method for producing secondary battery
A secondary battery is provided with a negative electrode sheet including a negative active material layer including negative active material particles. The negative active layer contains, as the negative active material particles, graphite particles formed from graphite and amorphous carbon particles formed from amorphous carbon.
03/20/14
20140080002
Lithium secondary battery of high power property with improved high power density
Disclosed is a high-output lithium secondary battery including: a cathode including a cathode active material having an average particle diameter (with respect to capacity) of 0.03 to 0.1 μm/mah and a layered structure; an anode including crystalline graphite and amorphous carbon as anode active materials, wherein the amount of the amorphous carbon is between 40 and 100 wt % based on the total weight of the anode active materials; and a separator.. .
03/20/14
20140080000
Lithium secondary battery of high power property with improved high power density
Disclosed is a high-output lithium secondary battery including: a cathode that includes, as cathode active materials, a first cathode active material represented by formula 1 below and having a layered structure and a second cathode active material represented by formula 2 below and having a spinel structure, wherein the amount of the second cathode active material is between 40 and 100 wt % based on the total weight of the cathode active materials; an anode including crystalline graphite and amorphous carbon as anode active materials, wherein the amount of the amorphous carbon is between 40 and 100 wt % based on the total weight of the anode active materials; and a separator.. .


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Amorphous topics: Crystallin, High Speed, Crystallize, Fatty Acids, Fatty Acid, Tartaric Acid

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